Modeling of deep-submicrometer MOSFETs: Random impurity effects, threshold voltage shifts and gate capacitance attenuation

Dragica Vasileska, William J. Gross, David K. Ferry

Research output: Chapter in Book/Report/Conference proceedingConference contribution

37 Scopus citations

Abstract

The authors present simulation results for the subthreshold characteristics of n-channel MOSFETs with 0.1 μm gate-length and 0.05 μm gate-width obtained with our 3D-DD simulator. We also presented a new method that one can successfully use in a particle-based simulator to properly account for the short-range portions of the e-e and e-i interactions without double-counting the long-range portions of these two interaction terms.

Original languageEnglish (US)
Title of host publicationExtended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages259-262
Number of pages4
Volume1998-October
ISBN (Electronic)0780343697, 9780780343696
DOIs
StatePublished - Jan 1 1998
Event6th International Workshop on Computational Electronics, IWCE 1998 - Osaka, Japan
Duration: Oct 19 1998Oct 21 1998

Other

Other6th International Workshop on Computational Electronics, IWCE 1998
CountryJapan
CityOsaka
Period10/19/9810/21/98

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ASJC Scopus subject areas

  • Modeling and Simulation
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Mathematical Physics

Cite this

Vasileska, D., Gross, W. J., & Ferry, D. K. (1998). Modeling of deep-submicrometer MOSFETs: Random impurity effects, threshold voltage shifts and gate capacitance attenuation. In Extended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998 (Vol. 1998-October, pp. 259-262). [742760] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IWCE.1998.742760