@inproceedings{b0af22178b4a4861bf9fce5518b131ae,
title = "Modeling of deep-submicrometer MOSFETs: Random impurity effects, threshold voltage shifts and gate capacitance attenuation",
abstract = "The authors present simulation results for the subthreshold characteristics of n-channel MOSFETs with 0.1 μm gate-length and 0.05 μm gate-width obtained with our 3D-DD simulator. We also presented a new method that one can successfully use in a particle-based simulator to properly account for the short-range portions of the e-e and e-i interactions without double-counting the long-range portions of these two interaction terms.",
author = "Dragica Vasileska and Gross, {William J.} and Ferry, {David K.}",
note = "Funding Information: This work is supported in part by the National Science Foundation under Contract No. ECS-9802596. Publisher Copyright: {\textcopyright} 1996 IEEE.; 6th International Workshop on Computational Electronics, IWCE 1998 ; Conference date: 19-10-1998 Through 21-10-1998",
year = "1998",
doi = "10.1109/IWCE.1998.742760",
language = "English (US)",
series = "Extended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "259--262",
booktitle = "Extended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998",
}