Abstract

The numerical simulation of β-SiC MESFETs, based upon a set of hydrodynamic equations, is presented. The electron transport properties for bulk β-SiC were obtained from a Monte Carlo simulation, and this provided baseline parameters for the relaxation times. Impact ionization was also included in the simulation, and found to be negligible in normal device operation. Gate lengths in the range 12-90 nms were considered. For the device structure and material parameters used here, the largest achievable transconductance is about 213 mS/mm and the cutoff frequency is greater than 1 THz. This transconductance is lower than that of equivalent GaAs devices. There is essentially no velocity overshoot in these devices, due to the short relaxation times for the β-SiC material (as compared to that of GaAs).

Original languageEnglish (US)
Pages (from-to)1289-1294
Number of pages6
JournalSolid State Electronics
Volume36
Issue number9
DOIs
StatePublished - Sep 1993

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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