Abstract

The numerical simulation of β-SiC MESFETs, based upon a set of hydrodynamic equations, is presented. The electron transport properties for bulk β-SiC were obtained from a Monte Carlo simulation, and this provided baseline parameters for the relaxation times. Impact ionization was also included in the simulation, and found to be negligible in normal device operation. Gate lengths in the range 12-90 nms were considered. For the device structure and material parameters used here, the largest achievable transconductance is about 213 mS/mm and the cutoff frequency is greater than 1 THz. This transconductance is lower than that of equivalent GaAs devices. There is essentially no velocity overshoot in these devices, due to the short relaxation times for the β-SiC material (as compared to that of GaAs).

Original languageEnglish (US)
Pages (from-to)1289-1294
Number of pages6
JournalSolid State Electronics
Volume36
Issue number9
DOIs
StatePublished - 1993

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hydrodynamic equations
Transconductance
Relaxation time
field effect transistors
Hydrodynamics
Electron transport properties
Impact ionization
Cutoff frequency
transconductance
relaxation time
simulation
Computer simulation
cut-off
transport properties
ionization
gallium arsenide
electrons
Monte Carlo simulation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Modeling of β-SiC MESFETs using hydrodynamic equations. / Zhou, Jing Rong; Vasileska, Dragica; Ferry, David K.

In: Solid State Electronics, Vol. 36, No. 9, 1993, p. 1289-1294.

Research output: Contribution to journalArticle

Zhou, Jing Rong ; Vasileska, Dragica ; Ferry, David K. / Modeling of β-SiC MESFETs using hydrodynamic equations. In: Solid State Electronics. 1993 ; Vol. 36, No. 9. pp. 1289-1294.
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