Modeling low dose rate effects in shallow trench isolation oxides

Ivan S. Esqueda; Hugh Barnaby; Philippe C. Adell; Bernard G. Rax; Harold P. Hjalmarson; Michael L. McLain; Ronald L. Pease

doi:10.1109/TNS.2011.2168569

Modeling low dose rate effects in shallow trench isolation oxides

Ivan S. Esqueda, Hugh Barnaby, Philippe C. Adell, Bernard G. Rax, Harold P. Hjalmarson, Michael L. McLain, Ronald L. Pease

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

Low dose rate experiments on field-oxide-field-effect-transistors (FOXFETs) fabricated in a 90 nm CMOS technology indicate that there is a dose rate enhancement factor (EF) associated with radiation-induced degradation. One dimensional (1-D) numerical calculations are used to investigate the key mechanisms responsible for the dose rate dependent buildup of radiation-induced defects in shallow trench isolation (STI) oxides. Calculations of damage EF indicate that oxide thickness, distribution of hole traps and hole capture cross-section affect dose rate sensitivity. The dose rate sensitivity of STI oxides is compared with the sensitivity of bipolar base oxides using model calculations.

Original language	English (US)
Article number	6044744
Pages (from-to)	2945-2952
Number of pages	8
Journal	IEEE Transactions on Nuclear Science
Volume	58
Issue number	6 PART 1
DOIs	https://doi.org/10.1109/TNS.2011.2168569
State	Published - Dec 2011

Keywords

Bipolar
CMOS
dose rate
enhanced low dose rate sensitivity (ELDRS)
interface traps
shallow trench isolation (STI)
silicon dioxide
total ionizing dose (TID)

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/TNS.2011.2168569

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title = "Modeling low dose rate effects in shallow trench isolation oxides",

abstract = "Low dose rate experiments on field-oxide-field-effect-transistors (FOXFETs) fabricated in a 90 nm CMOS technology indicate that there is a dose rate enhancement factor (EF) associated with radiation-induced degradation. One dimensional (1-D) numerical calculations are used to investigate the key mechanisms responsible for the dose rate dependent buildup of radiation-induced defects in shallow trench isolation (STI) oxides. Calculations of damage EF indicate that oxide thickness, distribution of hole traps and hole capture cross-section affect dose rate sensitivity. The dose rate sensitivity of STI oxides is compared with the sensitivity of bipolar base oxides using model calculations.",

keywords = "Bipolar, CMOS, dose rate, enhanced low dose rate sensitivity (ELDRS), interface traps, shallow trench isolation (STI), silicon dioxide, total ionizing dose (TID)",

author = "Esqueda, {Ivan S.} and Hugh Barnaby and Adell, {Philippe C.} and Rax, {Bernard G.} and Hjalmarson, {Harold P.} and McLain, {Michael L.} and Pease, {Ronald L.}",

note = "Funding Information: Manuscript received July 22, 2011; revised August 30, 2011; accepted September 08, 2011. Date of publication October 13, 2011; date of current version December 14, 2011. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy{\textquoteright}s National Nuclear Security Administration under contract DE-AC04-94AL85000. This work was supported by NASA Electronics Parts and Packaging Program (NEPP).",

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AU - Rax, Bernard G.

AU - Hjalmarson, Harold P.

AU - McLain, Michael L.

AU - Pease, Ronald L.

N1 - Funding Information: Manuscript received July 22, 2011; revised August 30, 2011; accepted September 08, 2011. Date of publication October 13, 2011; date of current version December 14, 2011. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy’s National Nuclear Security Administration under contract DE-AC04-94AL85000. This work was supported by NASA Electronics Parts and Packaging Program (NEPP).

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N2 - Low dose rate experiments on field-oxide-field-effect-transistors (FOXFETs) fabricated in a 90 nm CMOS technology indicate that there is a dose rate enhancement factor (EF) associated with radiation-induced degradation. One dimensional (1-D) numerical calculations are used to investigate the key mechanisms responsible for the dose rate dependent buildup of radiation-induced defects in shallow trench isolation (STI) oxides. Calculations of damage EF indicate that oxide thickness, distribution of hole traps and hole capture cross-section affect dose rate sensitivity. The dose rate sensitivity of STI oxides is compared with the sensitivity of bipolar base oxides using model calculations.

AB - Low dose rate experiments on field-oxide-field-effect-transistors (FOXFETs) fabricated in a 90 nm CMOS technology indicate that there is a dose rate enhancement factor (EF) associated with radiation-induced degradation. One dimensional (1-D) numerical calculations are used to investigate the key mechanisms responsible for the dose rate dependent buildup of radiation-induced defects in shallow trench isolation (STI) oxides. Calculations of damage EF indicate that oxide thickness, distribution of hole traps and hole capture cross-section affect dose rate sensitivity. The dose rate sensitivity of STI oxides is compared with the sensitivity of bipolar base oxides using model calculations.

KW - Bipolar

KW - CMOS

KW - dose rate

KW - enhanced low dose rate sensitivity (ELDRS)

KW - interface traps

KW - shallow trench isolation (STI)

KW - silicon dioxide

KW - total ionizing dose (TID)

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Modeling low dose rate effects in shallow trench isolation oxides

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