Modeling inter-device leakage in 90 nm bulk CMOS devices

Physics & Astronomy

• CMOS 100%
• leakage 92%
• oxides 69%
• field effect transistors 43%
• dosage 36%
• computer aided design 32%
• radiation 30%
• traps 20%
• geometry 15%
• simulation 10%

Engineering & Materials Science

• Oxides 95%
• Surface potential 75%
• Field effect transistors 59%
• Radiation 44%
• Doping (additives) 31%
• Analytical models 23%
• Computer aided design 23%
• Degradation 19%
• Geometry 16%