We demonstrate an analytical modeling approach that captures the effects of total ionizing dose (TID) on the Id - Vgs characteristics of field-oxide-field-effect-transistors (FOXFETs) fabricated in a low-standby power commercial bulk CMOS technology. Radiation-enabled technology computer aided design (TCAD) simulations and experimental data allow validating the model against technological parameters such as doping concentration, field-oxide thickness, and geometry. When used in conjunction with the closed-form expressions for the surface potential, the analytical models for fixed oxide charge and interface trap density enables accurate modeling of radiation-induced degradation of the FOXFET Id - Vgs characteristics allowing the incorporation of TID into surface potential based compact models.
- Analytical models
- field oxide field effect transistors (FOXFETs)
- total ionizing dose (TID)
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
- Electrical and Electronic Engineering