19 Citations (Scopus)

Abstract

We demonstrate an analytical modeling approach that captures the effects of total ionizing dose (TID) on the Id - Vgs characteristics of field-oxide-field-effect-transistors (FOXFETs) fabricated in a low-standby power commercial bulk CMOS technology. Radiation-enabled technology computer aided design (TCAD) simulations and experimental data allow validating the model against technological parameters such as doping concentration, field-oxide thickness, and geometry. When used in conjunction with the closed-form expressions for the surface potential, the analytical models for fixed oxide charge and interface trap density enables accurate modeling of radiation-induced degradation of the FOXFET Id - Vgs characteristics allowing the incorporation of TID into surface potential based compact models.

Original languageEnglish (US)
Article number5715907
Pages (from-to)793-799
Number of pages7
JournalIEEE Transactions on Nuclear Science
Volume58
Issue number3 PART 2
DOIs
StatePublished - Jun 2011

Fingerprint

CMOS
leakage
Oxides
oxides
Surface potential
Field effect transistors
field effect transistors
Radiation
dosage
radiation
computer aided design
Analytical models
Computer aided design
Doping (additives)
traps
degradation
Degradation
Geometry
geometry
simulation

Keywords

  • Analytical models
  • CMOS
  • field oxide field effect transistors (FOXFETs)
  • total ionizing dose (TID)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Nuclear Energy and Engineering
  • Nuclear and High Energy Physics

Cite this

Modeling inter-device leakage in 90 nm bulk CMOS devices. / Sanchez Esqueda, Ivan; Barnaby, Hugh; Holbert, Keith; Boulghassoul, Younes.

In: IEEE Transactions on Nuclear Science, Vol. 58, No. 3 PART 2, 5715907, 06.2011, p. 793-799.

Research output: Contribution to journalArticle

Sanchez Esqueda, Ivan ; Barnaby, Hugh ; Holbert, Keith ; Boulghassoul, Younes. / Modeling inter-device leakage in 90 nm bulk CMOS devices. In: IEEE Transactions on Nuclear Science. 2011 ; Vol. 58, No. 3 PART 2. pp. 793-799.
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