Modeling H2 adsorption processes at SnO2 nanowire surfaces parameter estimation and simulation

G. Tulzer, S. Baumgartner, E. Brunet, G. C. Mutinati, S. Steinhauer, A. Köck, C. Heitzinger

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Metal-oxide gas sensors are advantageous for various purposes due to their physical and chemical as well as electrical properties. However, a lack of selectivity remains the central issue in this field. A quantitative understanding of the processes at the semiconductor surface is crucial to overcome these difficulties. In this work, we determine numerical values for the parameters governing the interaction of H2 with the device to obtain quantitative information regarding the influence of the atmosphere on the sensor. With the computed values, simulations regarding the surface charge can be performed to understand the sensor behavior under different ambient conditions.

Original languageEnglish (US)
Title of host publicationBIODEVICES 2013 - Proceedings of the International Conference on Biomedical Electronics and Devices
Pages265-268
Number of pages4
StatePublished - 2013
Externally publishedYes
EventInternational Conference on Biomedical Electronics and Devices, BIODEVICES 2013 - Barcelona, Spain
Duration: Feb 11 2013Feb 14 2013

Other

OtherInternational Conference on Biomedical Electronics and Devices, BIODEVICES 2013
CountrySpain
CityBarcelona
Period2/11/132/14/13

Fingerprint

Parameter estimation
Nanowires
Adsorption
Sensors
Surface charge
Chemical sensors
Electric properties
Semiconductor materials
Oxides
Metals

Keywords

  • Inverse modeling
  • Modeling
  • Nanowire gas sensors
  • Parameter estimation
  • Selectivity
  • Simulation

ASJC Scopus subject areas

  • Biomedical Engineering
  • Electrical and Electronic Engineering

Cite this

Tulzer, G., Baumgartner, S., Brunet, E., Mutinati, G. C., Steinhauer, S., Köck, A., & Heitzinger, C. (2013). Modeling H2 adsorption processes at SnO2 nanowire surfaces parameter estimation and simulation. In BIODEVICES 2013 - Proceedings of the International Conference on Biomedical Electronics and Devices (pp. 265-268)

Modeling H2 adsorption processes at SnO2 nanowire surfaces parameter estimation and simulation. / Tulzer, G.; Baumgartner, S.; Brunet, E.; Mutinati, G. C.; Steinhauer, S.; Köck, A.; Heitzinger, C.

BIODEVICES 2013 - Proceedings of the International Conference on Biomedical Electronics and Devices. 2013. p. 265-268.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Tulzer, G, Baumgartner, S, Brunet, E, Mutinati, GC, Steinhauer, S, Köck, A & Heitzinger, C 2013, Modeling H2 adsorption processes at SnO2 nanowire surfaces parameter estimation and simulation. in BIODEVICES 2013 - Proceedings of the International Conference on Biomedical Electronics and Devices. pp. 265-268, International Conference on Biomedical Electronics and Devices, BIODEVICES 2013, Barcelona, Spain, 2/11/13.
Tulzer G, Baumgartner S, Brunet E, Mutinati GC, Steinhauer S, Köck A et al. Modeling H2 adsorption processes at SnO2 nanowire surfaces parameter estimation and simulation. In BIODEVICES 2013 - Proceedings of the International Conference on Biomedical Electronics and Devices. 2013. p. 265-268
Tulzer, G. ; Baumgartner, S. ; Brunet, E. ; Mutinati, G. C. ; Steinhauer, S. ; Köck, A. ; Heitzinger, C. / Modeling H2 adsorption processes at SnO2 nanowire surfaces parameter estimation and simulation. BIODEVICES 2013 - Proceedings of the International Conference on Biomedical Electronics and Devices. 2013. pp. 265-268
@inproceedings{6334257bb76048418e9b9cf09d0aa855,
title = "Modeling H2 adsorption processes at SnO2 nanowire surfaces parameter estimation and simulation",
abstract = "Metal-oxide gas sensors are advantageous for various purposes due to their physical and chemical as well as electrical properties. However, a lack of selectivity remains the central issue in this field. A quantitative understanding of the processes at the semiconductor surface is crucial to overcome these difficulties. In this work, we determine numerical values for the parameters governing the interaction of H2 with the device to obtain quantitative information regarding the influence of the atmosphere on the sensor. With the computed values, simulations regarding the surface charge can be performed to understand the sensor behavior under different ambient conditions.",
keywords = "Inverse modeling, Modeling, Nanowire gas sensors, Parameter estimation, Selectivity, Simulation",
author = "G. Tulzer and S. Baumgartner and E. Brunet and Mutinati, {G. C.} and S. Steinhauer and A. K{\"o}ck and C. Heitzinger",
year = "2013",
language = "English (US)",
isbn = "9789898565341",
pages = "265--268",
booktitle = "BIODEVICES 2013 - Proceedings of the International Conference on Biomedical Electronics and Devices",

}

TY - GEN

T1 - Modeling H2 adsorption processes at SnO2 nanowire surfaces parameter estimation and simulation

AU - Tulzer, G.

AU - Baumgartner, S.

AU - Brunet, E.

AU - Mutinati, G. C.

AU - Steinhauer, S.

AU - Köck, A.

AU - Heitzinger, C.

PY - 2013

Y1 - 2013

N2 - Metal-oxide gas sensors are advantageous for various purposes due to their physical and chemical as well as electrical properties. However, a lack of selectivity remains the central issue in this field. A quantitative understanding of the processes at the semiconductor surface is crucial to overcome these difficulties. In this work, we determine numerical values for the parameters governing the interaction of H2 with the device to obtain quantitative information regarding the influence of the atmosphere on the sensor. With the computed values, simulations regarding the surface charge can be performed to understand the sensor behavior under different ambient conditions.

AB - Metal-oxide gas sensors are advantageous for various purposes due to their physical and chemical as well as electrical properties. However, a lack of selectivity remains the central issue in this field. A quantitative understanding of the processes at the semiconductor surface is crucial to overcome these difficulties. In this work, we determine numerical values for the parameters governing the interaction of H2 with the device to obtain quantitative information regarding the influence of the atmosphere on the sensor. With the computed values, simulations regarding the surface charge can be performed to understand the sensor behavior under different ambient conditions.

KW - Inverse modeling

KW - Modeling

KW - Nanowire gas sensors

KW - Parameter estimation

KW - Selectivity

KW - Simulation

UR - http://www.scopus.com/inward/record.url?scp=84877936420&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84877936420&partnerID=8YFLogxK

M3 - Conference contribution

SN - 9789898565341

SP - 265

EP - 268

BT - BIODEVICES 2013 - Proceedings of the International Conference on Biomedical Electronics and Devices

ER -