Modeling GaN HEMTs using thermal particle-based device simulator

Balaji Padmanabhan; Ashwin Ashok; Dragica Vasileska; Stephen Goodnick

doi:10.1109/ISDRS.2009.5378113

Modeling GaN HEMTs using thermal particle-based device simulator

Balaji Padmanabhan, Ashwin Ashok, Dragica Vasileska, Stephen Goodnick

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English (US)
Title of host publication	2009 International Semiconductor Device Research Symposium, ISDRS '09
DOIs	https://doi.org/10.1109/ISDRS.2009.5378113
State	Published - Dec 1 2009
Event	2009 International Semiconductor Device Research Symposium, ISDRS '09 - College Park, MD, United States Duration: Dec 9 2009 → Dec 11 2009

Publication series

Name	2009 International Semiconductor Device Research Symposium, ISDRS '09

Other

Other	2009 International Semiconductor Device Research Symposium, ISDRS '09
Country/Territory	United States
City	College Park, MD
Period	12/9/09 → 12/11/09

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ISDRS.2009.5378113

Cite this

Modeling GaN HEMTs using thermal particle-based device simulator. / Padmanabhan, Balaji; Ashok, Ashwin; Vasileska, Dragica et al.
2009 International Semiconductor Device Research Symposium, ISDRS '09. 2009. 5378113 (2009 International Semiconductor Device Research Symposium, ISDRS '09).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Padmanabhan, B, Ashok, A, Vasileska, D & Goodnick, S 2009, Modeling GaN HEMTs using thermal particle-based device simulator. in 2009 International Semiconductor Device Research Symposium, ISDRS '09., 5378113, 2009 International Semiconductor Device Research Symposium, ISDRS '09, 2009 International Semiconductor Device Research Symposium, ISDRS '09, College Park, MD, United States, 12/9/09. https://doi.org/10.1109/ISDRS.2009.5378113

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AU - Goodnick, Stephen

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M3 - Conference contribution

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SN - 9781424460304

T3 - 2009 International Semiconductor Device Research Symposium, ISDRS '09

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T2 - 2009 International Semiconductor Device Research Symposium, ISDRS '09

Y2 - 9 December 2009 through 11 December 2009

ER -

Modeling GaN HEMTs using thermal particle-based device simulator

Publication series

Other

ASJC Scopus subject areas

Access to Document

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