Modeling fluctuations in the threshold voltage and ON-current and threshold voltage fluctuation due to random telegraph noise

Nabil Ashraf; Dragica Vasileska; Gerhard Klimeck

doi:10.1109/NANO.2010.5697821

Modeling fluctuations in the threshold voltage and ON-current and threshold voltage fluctuation due to random telegraph noise

Nabil Ashraf, Dragica Vasileska, Gerhard Klimeck

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

We investigate the influence of two traps in close proximity within one nanometer located at the semiconductor/oxide interface (positioned in the middle of the gate width and moved from the source end to the drain end of the channel) on the threshold voltage and the ON-current variation. We find that when one of the traps is located at the source end of the channel, the threshold voltage and the magnitude of the drain current are dominated by the potential barrier created by the negatively charged trap. When the trap is positioned at the drain-end of the channel, the barrier effect is smaller and screening (for small drain bias) and the absence of screening (at large drain bias due to the presence of the pinch-off region) determine whether current will be degraded or not.

Original language	English (US)
Title of host publication	2010 10th IEEE Conference on Nanotechnology, NANO 2010
Pages	782-785
Number of pages	4
DOIs	https://doi.org/10.1109/NANO.2010.5697821
State	Published - Dec 1 2010
Event	2010 10th IEEE Conference on Nanotechnology, NANO 2010 - Ilsan, Gyeonggi-Do, Korea, Republic of Duration: Aug 17 2010 → Aug 20 2010

Publication series

Name	2010 10th IEEE Conference on Nanotechnology, NANO 2010

Other

Other	2010 10th IEEE Conference on Nanotechnology, NANO 2010
Country/Territory	Korea, Republic of
City	Ilsan, Gyeonggi-Do
Period	8/17/10 → 8/20/10

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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10.1109/NANO.2010.5697821

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Modeling fluctuations in the threshold voltage and ON-current and threshold voltage fluctuation due to random telegraph noise. / Ashraf, Nabil; Vasileska, Dragica; Klimeck, Gerhard.
2010 10th IEEE Conference on Nanotechnology, NANO 2010. 2010. p. 782-785 5697821 (2010 10th IEEE Conference on Nanotechnology, NANO 2010).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ashraf, N, Vasileska, D & Klimeck, G 2010, Modeling fluctuations in the threshold voltage and ON-current and threshold voltage fluctuation due to random telegraph noise. in 2010 10th IEEE Conference on Nanotechnology, NANO 2010., 5697821, 2010 10th IEEE Conference on Nanotechnology, NANO 2010, pp. 782-785, 2010 10th IEEE Conference on Nanotechnology, NANO 2010, Ilsan, Gyeonggi-Do, Korea, Republic of, 8/17/10. https://doi.org/10.1109/NANO.2010.5697821

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abstract = "We investigate the influence of two traps in close proximity within one nanometer located at the semiconductor/oxide interface (positioned in the middle of the gate width and moved from the source end to the drain end of the channel) on the threshold voltage and the ON-current variation. We find that when one of the traps is located at the source end of the channel, the threshold voltage and the magnitude of the drain current are dominated by the potential barrier created by the negatively charged trap. When the trap is positioned at the drain-end of the channel, the barrier effect is smaller and screening (for small drain bias) and the absence of screening (at large drain bias due to the presence of the pinch-off region) determine whether current will be degraded or not.",

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N2 - We investigate the influence of two traps in close proximity within one nanometer located at the semiconductor/oxide interface (positioned in the middle of the gate width and moved from the source end to the drain end of the channel) on the threshold voltage and the ON-current variation. We find that when one of the traps is located at the source end of the channel, the threshold voltage and the magnitude of the drain current are dominated by the potential barrier created by the negatively charged trap. When the trap is positioned at the drain-end of the channel, the barrier effect is smaller and screening (for small drain bias) and the absence of screening (at large drain bias due to the presence of the pinch-off region) determine whether current will be degraded or not.

AB - We investigate the influence of two traps in close proximity within one nanometer located at the semiconductor/oxide interface (positioned in the middle of the gate width and moved from the source end to the drain end of the channel) on the threshold voltage and the ON-current variation. We find that when one of the traps is located at the source end of the channel, the threshold voltage and the magnitude of the drain current are dominated by the potential barrier created by the negatively charged trap. When the trap is positioned at the drain-end of the channel, the barrier effect is smaller and screening (for small drain bias) and the absence of screening (at large drain bias due to the presence of the pinch-off region) determine whether current will be degraded or not.

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Modeling fluctuations in the threshold voltage and ON-current and threshold voltage fluctuation due to random telegraph noise

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