Modeling fluctuations in the threshold voltage and ON-current and threshold voltage fluctuation due to random telegraph noise

Nabil Ashraf, Dragica Vasileska, Gerhard Klimeck

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

We investigate the influence of two traps in close proximity within one nanometer located at the semiconductor/oxide interface (positioned in the middle of the gate width and moved from the source end to the drain end of the channel) on the threshold voltage and the ON-current variation. We find that when one of the traps is located at the source end of the channel, the threshold voltage and the magnitude of the drain current are dominated by the potential barrier created by the negatively charged trap. When the trap is positioned at the drain-end of the channel, the barrier effect is smaller and screening (for small drain bias) and the absence of screening (at large drain bias due to the presence of the pinch-off region) determine whether current will be degraded or not.

Original languageEnglish (US)
Title of host publication2010 10th IEEE Conference on Nanotechnology, NANO 2010
Pages782-785
Number of pages4
DOIs
StatePublished - Dec 1 2010
Event2010 10th IEEE Conference on Nanotechnology, NANO 2010 - Ilsan, Gyeonggi-Do, Korea, Republic of
Duration: Aug 17 2010Aug 20 2010

Publication series

Name2010 10th IEEE Conference on Nanotechnology, NANO 2010

Other

Other2010 10th IEEE Conference on Nanotechnology, NANO 2010
CountryKorea, Republic of
CityIlsan, Gyeonggi-Do
Period8/17/108/20/10

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ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Ashraf, N., Vasileska, D., & Klimeck, G. (2010). Modeling fluctuations in the threshold voltage and ON-current and threshold voltage fluctuation due to random telegraph noise. In 2010 10th IEEE Conference on Nanotechnology, NANO 2010 (pp. 782-785). [5697821] (2010 10th IEEE Conference on Nanotechnology, NANO 2010). https://doi.org/10.1109/NANO.2010.5697821