Modeling FinFETs using non-equilibrium green's function formalism: Influence of interface-roughness on device characteristics

H. R. Khan, D. Mamaluy, Dragica Vasileska

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We utilize a fully quantum mechanical transport simulator based on the Contact Block Reduction (CBR) method to investigate the influence of interface roughness in nanoscale FinFET devices. In this work we treat interface roughness by creating a random deviation at ideal Si/SiO2 interface in real space, and then solving quantum transport problem fully self-consistently with the gates for the resulting device potential. We study the influence of interface roughness on device capacitance, drain current, and gate leakage for different regime of operation. Our simulation results show that gate leakage is significantly affected by surface roughness, even though the average oxide thickness remains approximately the same. On the other hand, the on-current is comparatively less sensitive to the interface roughness for FinFET devices with narrow fin width. Furthermore, we And that interface roughness significantly affects both the intrinsic switching speed and, especially, the cut-off frequency of FinFET with narrow fin thickness.

Original languageEnglish (US)
Title of host publication2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings
Pages695-699
Number of pages5
DOIs
StatePublished - Dec 1 2007
Event2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007 - Hong Kong, China
Duration: Aug 2 2007Aug 5 2007

Publication series

Name2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings

Other

Other2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007
CountryChina
CityHong Kong
Period8/2/078/5/07

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

Fingerprint Dive into the research topics of 'Modeling FinFETs using non-equilibrium green's function formalism: Influence of interface-roughness on device characteristics'. Together they form a unique fingerprint.

  • Cite this

    Khan, H. R., Mamaluy, D., & Vasileska, D. (2007). Modeling FinFETs using non-equilibrium green's function formalism: Influence of interface-roughness on device characteristics. In 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings (pp. 695-699). [4601284] (2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings). https://doi.org/10.1109/NANO.2007.4601284