TY - GEN
T1 - Modeling FinFETs using non-equilibrium green's function formalism
T2 - 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007
AU - Khan, H. R.
AU - Mamaluy, D.
AU - Vasileska, Dragica
PY - 2007/12/1
Y1 - 2007/12/1
N2 - We utilize a fully quantum mechanical transport simulator based on the Contact Block Reduction (CBR) method to investigate the influence of interface roughness in nanoscale FinFET devices. In this work we treat interface roughness by creating a random deviation at ideal Si/SiO2 interface in real space, and then solving quantum transport problem fully self-consistently with the gates for the resulting device potential. We study the influence of interface roughness on device capacitance, drain current, and gate leakage for different regime of operation. Our simulation results show that gate leakage is significantly affected by surface roughness, even though the average oxide thickness remains approximately the same. On the other hand, the on-current is comparatively less sensitive to the interface roughness for FinFET devices with narrow fin width. Furthermore, we And that interface roughness significantly affects both the intrinsic switching speed and, especially, the cut-off frequency of FinFET with narrow fin thickness.
AB - We utilize a fully quantum mechanical transport simulator based on the Contact Block Reduction (CBR) method to investigate the influence of interface roughness in nanoscale FinFET devices. In this work we treat interface roughness by creating a random deviation at ideal Si/SiO2 interface in real space, and then solving quantum transport problem fully self-consistently with the gates for the resulting device potential. We study the influence of interface roughness on device capacitance, drain current, and gate leakage for different regime of operation. Our simulation results show that gate leakage is significantly affected by surface roughness, even though the average oxide thickness remains approximately the same. On the other hand, the on-current is comparatively less sensitive to the interface roughness for FinFET devices with narrow fin width. Furthermore, we And that interface roughness significantly affects both the intrinsic switching speed and, especially, the cut-off frequency of FinFET with narrow fin thickness.
UR - http://www.scopus.com/inward/record.url?scp=52949134149&partnerID=8YFLogxK
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U2 - 10.1109/NANO.2007.4601284
DO - 10.1109/NANO.2007.4601284
M3 - Conference contribution
AN - SCOPUS:52949134149
SN - 1424406080
SN - 9781424406081
T3 - 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings
SP - 695
EP - 699
BT - 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings
Y2 - 2 August 2007 through 5 August 2007
ER -