Modeling fast processes in semiconductors by Monte Carlo techniques

David K. Ferry, Alfred M. Kriman, Meng Jeng Kann, H. Hida, Seiichiro Yamaguchi, Ravindra P. Joshi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A secondary self-scattering process is introduced within a semiclassical Monte Carlo treatment of laser excitation in GaAs to treat the finite collision duration that arises for very fast scattering processes. Such an approach allows us to incorporate quantum collision retardation effects that go beyond both the normal Boltzmann transport equation and beyond the Fermi golden rule. This effect dramatically reduces the effect of the fast scattering process - the transfer of carriers from the central conduction band valey to the X valleys. This implies that such collision retardation effects are quite important in processes which have high Fermi golden rule scattering rates.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Place of PublicationBellingham, WA, United States
PublisherPubl by Int Soc for Optical Engineering
Pages128-138
Number of pages11
Volume1599
ISBN (Print)0819407305
StatePublished - 1992
EventRecent Advances in the Uses of Light in Physics, Chemistry, Engineering, and Medicine - New York, NY, USA
Duration: Jun 19 1991Jun 21 1991

Other

OtherRecent Advances in the Uses of Light in Physics, Chemistry, Engineering, and Medicine
CityNew York, NY, USA
Period6/19/916/21/91

Fingerprint

Scattering
Semiconductor materials
scattering
collisions
Boltzmann transport equation
Laser excitation
Conduction bands
valleys
conduction bands
excitation
lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Ferry, D. K., Kriman, A. M., Kann, M. J., Hida, H., Yamaguchi, S., & Joshi, R. P. (1992). Modeling fast processes in semiconductors by Monte Carlo techniques. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 1599, pp. 128-138). Bellingham, WA, United States: Publ by Int Soc for Optical Engineering.

Modeling fast processes in semiconductors by Monte Carlo techniques. / Ferry, David K.; Kriman, Alfred M.; Kann, Meng Jeng; Hida, H.; Yamaguchi, Seiichiro; Joshi, Ravindra P.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 1599 Bellingham, WA, United States : Publ by Int Soc for Optical Engineering, 1992. p. 128-138.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ferry, DK, Kriman, AM, Kann, MJ, Hida, H, Yamaguchi, S & Joshi, RP 1992, Modeling fast processes in semiconductors by Monte Carlo techniques. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 1599, Publ by Int Soc for Optical Engineering, Bellingham, WA, United States, pp. 128-138, Recent Advances in the Uses of Light in Physics, Chemistry, Engineering, and Medicine, New York, NY, USA, 6/19/91.
Ferry DK, Kriman AM, Kann MJ, Hida H, Yamaguchi S, Joshi RP. Modeling fast processes in semiconductors by Monte Carlo techniques. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 1599. Bellingham, WA, United States: Publ by Int Soc for Optical Engineering. 1992. p. 128-138
Ferry, David K. ; Kriman, Alfred M. ; Kann, Meng Jeng ; Hida, H. ; Yamaguchi, Seiichiro ; Joshi, Ravindra P. / Modeling fast processes in semiconductors by Monte Carlo techniques. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 1599 Bellingham, WA, United States : Publ by Int Soc for Optical Engineering, 1992. pp. 128-138
@inproceedings{99c36a2a155442519050e05136bc777b,
title = "Modeling fast processes in semiconductors by Monte Carlo techniques",
abstract = "A secondary self-scattering process is introduced within a semiclassical Monte Carlo treatment of laser excitation in GaAs to treat the finite collision duration that arises for very fast scattering processes. Such an approach allows us to incorporate quantum collision retardation effects that go beyond both the normal Boltzmann transport equation and beyond the Fermi golden rule. This effect dramatically reduces the effect of the fast scattering process - the transfer of carriers from the central conduction band valey to the X valleys. This implies that such collision retardation effects are quite important in processes which have high Fermi golden rule scattering rates.",
author = "Ferry, {David K.} and Kriman, {Alfred M.} and Kann, {Meng Jeng} and H. Hida and Seiichiro Yamaguchi and Joshi, {Ravindra P.}",
year = "1992",
language = "English (US)",
isbn = "0819407305",
volume = "1599",
pages = "128--138",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "Publ by Int Soc for Optical Engineering",

}

TY - GEN

T1 - Modeling fast processes in semiconductors by Monte Carlo techniques

AU - Ferry, David K.

AU - Kriman, Alfred M.

AU - Kann, Meng Jeng

AU - Hida, H.

AU - Yamaguchi, Seiichiro

AU - Joshi, Ravindra P.

PY - 1992

Y1 - 1992

N2 - A secondary self-scattering process is introduced within a semiclassical Monte Carlo treatment of laser excitation in GaAs to treat the finite collision duration that arises for very fast scattering processes. Such an approach allows us to incorporate quantum collision retardation effects that go beyond both the normal Boltzmann transport equation and beyond the Fermi golden rule. This effect dramatically reduces the effect of the fast scattering process - the transfer of carriers from the central conduction band valey to the X valleys. This implies that such collision retardation effects are quite important in processes which have high Fermi golden rule scattering rates.

AB - A secondary self-scattering process is introduced within a semiclassical Monte Carlo treatment of laser excitation in GaAs to treat the finite collision duration that arises for very fast scattering processes. Such an approach allows us to incorporate quantum collision retardation effects that go beyond both the normal Boltzmann transport equation and beyond the Fermi golden rule. This effect dramatically reduces the effect of the fast scattering process - the transfer of carriers from the central conduction band valey to the X valleys. This implies that such collision retardation effects are quite important in processes which have high Fermi golden rule scattering rates.

UR - http://www.scopus.com/inward/record.url?scp=0026628489&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026628489&partnerID=8YFLogxK

M3 - Conference contribution

SN - 0819407305

VL - 1599

SP - 128

EP - 138

BT - Proceedings of SPIE - The International Society for Optical Engineering

PB - Publ by Int Soc for Optical Engineering

CY - Bellingham, WA, United States

ER -