Modeling disorder effect of the oxygen vacancy distribution in filamentary analog RRAM for neuromorphic computing

Bin Gao; Huaqiang Wu; Wei Wu; Xiaohu Wang; Peng Yao; Yue Xi; Wenqiang Zhang; Ning Deng; Peng Huang; Xiaoyan Liu; Jinfeng Kang; Hong Yu Chen; Shimeng Yu; He Qian

doi:10.1109/IEDM.2017.8268326

Modeling disorder effect of the oxygen vacancy distribution in filamentary analog RRAM for neuromorphic computing

Bin Gao, Huaqiang Wu, Wei Wu, Xiaohu Wang, Peng Yao, Yue Xi, Wenqiang Zhang, Ning Deng, Peng Huang, Xiaoyan Liu, Jinfeng Kang, Hong Yu Chen, Shimeng Yu, He Qian

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

25 Scopus citations

Abstract

Although bi-directional analog switching capability is crucial for neuromorphic computing application, it is still difficult to be realized in filamentary RRAM cells. This work investigates the physical mechanism of the abrupt switching to the analog switching transition using Kinetic Monte Carlo simulation method. A disorder-related model for oxygen vacancy distribution is proposed with an order parameter Or to quantify the analog behaviors of different RRAM devices. The simulation results and model predictions are verified by experiments performed on lkb RRAM array. It is suggested that disordered oxygen vacancy distribution is desired for analog switching. Optimization guideline for improving the analog performance of filamentary RRAM is provided.

Original language	English (US)
Title of host publication	2017 IEEE International Electron Devices Meeting, IEDM 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	4.4.1-4.4.4
ISBN (Electronic)	9781538635599
DOIs	https://doi.org/10.1109/IEDM.2017.8268326
State	Published - Jan 23 2018
Event	63rd IEEE International Electron Devices Meeting, IEDM 2017 - San Francisco, United States Duration: Dec 2 2017 → Dec 6 2017

Other

Other	63rd IEEE International Electron Devices Meeting, IEDM 2017
Country/Territory	United States
City	San Francisco
Period	12/2/17 → 12/6/17

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.2017.8268326

Cite this

Gao, B., Wu, H., Wu, W., Wang, X., Yao, P., Xi, Y., Zhang, W., Deng, N., Huang, P., Liu, X., Kang, J., Chen, H. Y., Yu, S., & Qian, H. (2018). Modeling disorder effect of the oxygen vacancy distribution in filamentary analog RRAM for neuromorphic computing. In 2017 IEEE International Electron Devices Meeting, IEDM 2017 (pp. 4.4.1-4.4.4). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2017.8268326

Modeling disorder effect of the oxygen vacancy distribution in filamentary analog RRAM for neuromorphic computing. / Gao, Bin; Wu, Huaqiang; Wu, Wei et al.
2017 IEEE International Electron Devices Meeting, IEDM 2017. Institute of Electrical and Electronics Engineers Inc., 2018. p. 4.4.1-4.4.4.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Gao, B, Wu, H, Wu, W, Wang, X, Yao, P, Xi, Y, Zhang, W, Deng, N, Huang, P, Liu, X, Kang, J, Chen, HY, Yu, S & Qian, H 2018, Modeling disorder effect of the oxygen vacancy distribution in filamentary analog RRAM for neuromorphic computing. in 2017 IEEE International Electron Devices Meeting, IEDM 2017. Institute of Electrical and Electronics Engineers Inc., pp. 4.4.1-4.4.4, 63rd IEEE International Electron Devices Meeting, IEDM 2017, San Francisco, United States, 12/2/17. https://doi.org/10.1109/IEDM.2017.8268326

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abstract = "Although bi-directional analog switching capability is crucial for neuromorphic computing application, it is still difficult to be realized in filamentary RRAM cells. This work investigates the physical mechanism of the abrupt switching to the analog switching transition using Kinetic Monte Carlo simulation method. A disorder-related model for oxygen vacancy distribution is proposed with an order parameter Or to quantify the analog behaviors of different RRAM devices. The simulation results and model predictions are verified by experiments performed on lkb RRAM array. It is suggested that disordered oxygen vacancy distribution is desired for analog switching. Optimization guideline for improving the analog performance of filamentary RRAM is provided.",

author = "Bin Gao and Huaqiang Wu and Wei Wu and Xiaohu Wang and Peng Yao and Yue Xi and Wenqiang Zhang and Ning Deng and Peng Huang and Xiaoyan Liu and Jinfeng Kang and Chen, {Hong Yu} and Shimeng Yu and He Qian",

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AU - Gao, Bin

AU - Wu, Huaqiang

AU - Wu, Wei

AU - Wang, Xiaohu

AU - Yao, Peng

AU - Xi, Yue

AU - Zhang, Wenqiang

AU - Deng, Ning

AU - Huang, Peng

AU - Liu, Xiaoyan

AU - Kang, Jinfeng

AU - Chen, Hong Yu

AU - Yu, Shimeng

AU - Qian, He

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N2 - Although bi-directional analog switching capability is crucial for neuromorphic computing application, it is still difficult to be realized in filamentary RRAM cells. This work investigates the physical mechanism of the abrupt switching to the analog switching transition using Kinetic Monte Carlo simulation method. A disorder-related model for oxygen vacancy distribution is proposed with an order parameter Or to quantify the analog behaviors of different RRAM devices. The simulation results and model predictions are verified by experiments performed on lkb RRAM array. It is suggested that disordered oxygen vacancy distribution is desired for analog switching. Optimization guideline for improving the analog performance of filamentary RRAM is provided.

AB - Although bi-directional analog switching capability is crucial for neuromorphic computing application, it is still difficult to be realized in filamentary RRAM cells. This work investigates the physical mechanism of the abrupt switching to the analog switching transition using Kinetic Monte Carlo simulation method. A disorder-related model for oxygen vacancy distribution is proposed with an order parameter Or to quantify the analog behaviors of different RRAM devices. The simulation results and model predictions are verified by experiments performed on lkb RRAM array. It is suggested that disordered oxygen vacancy distribution is desired for analog switching. Optimization guideline for improving the analog performance of filamentary RRAM is provided.

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Modeling disorder effect of the oxygen vacancy distribution in filamentary analog RRAM for neuromorphic computing

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