Modeling disorder effect of the oxygen vacancy distribution in filamentary analog RRAM for neuromorphic computing

Bin Gao, Huaqiang Wu, Wei Wu, Xiaohu Wang, Peng Yao, Yue Xi, Wenqiang Zhang, Ning Deng, Peng Huang, Xiaoyan Liu, Jinfeng Kang, Hong Yu Chen, Shimeng Yu, He Qian

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Scopus citations

Abstract

Although bi-directional analog switching capability is crucial for neuromorphic computing application, it is still difficult to be realized in filamentary RRAM cells. This work investigates the physical mechanism of the abrupt switching to the analog switching transition using Kinetic Monte Carlo simulation method. A disorder-related model for oxygen vacancy distribution is proposed with an order parameter Or to quantify the analog behaviors of different RRAM devices. The simulation results and model predictions are verified by experiments performed on lkb RRAM array. It is suggested that disordered oxygen vacancy distribution is desired for analog switching. Optimization guideline for improving the analog performance of filamentary RRAM is provided.

Original languageEnglish (US)
Title of host publication2017 IEEE International Electron Devices Meeting, IEDM 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages4.4.1-4.4.4
ISBN (Electronic)9781538635599
DOIs
StatePublished - Jan 23 2018
Event63rd IEEE International Electron Devices Meeting, IEDM 2017 - San Francisco, United States
Duration: Dec 2 2017Dec 6 2017

Other

Other63rd IEEE International Electron Devices Meeting, IEDM 2017
CountryUnited States
CitySan Francisco
Period12/2/1712/6/17

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Gao, B., Wu, H., Wu, W., Wang, X., Yao, P., Xi, Y., Zhang, W., Deng, N., Huang, P., Liu, X., Kang, J., Chen, H. Y., Yu, S., & Qian, H. (2018). Modeling disorder effect of the oxygen vacancy distribution in filamentary analog RRAM for neuromorphic computing. In 2017 IEEE International Electron Devices Meeting, IEDM 2017 (pp. 4.4.1-4.4.4). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2017.8268326