Abstract

In state of the art devices, it is well known that quantum and Coulomb effects play significant role on the device operation. In this review article we demonstrate that: (1) proper treatment of the short-range Coulomb interactions is needed, and (2) there are significant variations in device design parameters for devices fabricated on the same chip due to the presence of discrete dopant atoms at random locations within the channel. The influence of unintentional dopants is also examined in both narrow wire SOI devices and FinFETs with a three-dimensional (3D) in-house Monte Carlo-Molecular Dynamics Device Simulator.

Original languageEnglish (US)
Pages (from-to)1793-1827
Number of pages35
JournalJournal of Computational and Theoretical Nanoscience
Volume5
Issue number9
DOIs
StatePublished - Sep 2008

Fingerprint

Doping (additives)
Coulomb interactions
Modeling
Molecular dynamics
Simulators
Wire
Atoms
Coulomb Interaction
SOI (semiconductors)
Parameter Design
Molecular Dynamics
simulators
Simulator
Chip
chips
wire
molecular dynamics
Three-dimensional
Range of data
Demonstrate

Keywords

  • Discrete impurity effects
  • Nanodevice modeling
  • Unintentional doping

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Computational Mathematics
  • Chemistry(all)

Cite this

Modeling Coulomb effects in nanoscale devices. / Vasileska, Dragica; Khan, H. R.; Ahmed, S. S.

In: Journal of Computational and Theoretical Nanoscience, Vol. 5, No. 9, 09.2008, p. 1793-1827.

Research output: Contribution to journalArticle

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