Abstract
In state of the art devices, it is well known that quantum and Coulomb effects play significant role on the device operation. In this review article we demonstrate that: (1) proper treatment of the short-range Coulomb interactions is needed, and (2) there are significant variations in device design parameters for devices fabricated on the same chip due to the presence of discrete dopant atoms at random locations within the channel. The influence of unintentional dopants is also examined in both narrow wire SOI devices and FinFETs with a three-dimensional (3D) in-house Monte Carlo-Molecular Dynamics Device Simulator.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1793-1827 |
| Number of pages | 35 |
| Journal | Journal of Computational and Theoretical Nanoscience |
| Volume | 5 |
| Issue number | 9 |
| DOIs | |
| State | Published - Sep 2008 |
Keywords
- Discrete impurity effects
- Nanodevice modeling
- Unintentional doping
ASJC Scopus subject areas
- General Chemistry
- General Materials Science
- Condensed Matter Physics
- Computational Mathematics
- Electrical and Electronic Engineering