Modeling bjt radiation response with non-uniform energy distributions of interface traps

H. J. Barnaby; C. Cirba; R. D. Schrimpf; S. L. Rosier; P. Fouillat; X. Montagner

doi:10.1109/23.856473

Modeling bjt radiation response with non-uniform energy distributions of interface traps

H. J. Barnaby, C. Cirba, R. D. Schrimpf, S. L. Rosier, P. Fouillat, X. Montagner

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Radiation-induced oxide defects that degrade electrical characteristics of BJTs can be measured with the use of gated diodes. The buildup of defects and their effect on device radiation response are modeled with computer simulation.

Original language	English (US)
Pages (from-to)	514-518
Number of pages	5
Journal	IEEE Transactions on Nuclear Science
Volume	47
Issue number	3 PART 1
DOIs	https://doi.org/10.1109/23.856473
State	Published - 2000
Externally published	Yes

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/23.856473

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@article{f6050d7bbb884635a9608ee11ba2925e,

title = "Modeling bjt radiation response with non-uniform energy distributions of interface traps",

abstract = "Radiation-induced oxide defects that degrade electrical characteristics of BJTs can be measured with the use of gated diodes. The buildup of defects and their effect on device radiation response are modeled with computer simulation.",

author = "Barnaby, {H. J.} and C. Cirba and Schrimpf, {R. D.} and Rosier, {S. L.} and P. Fouillat and X. Montagner",

note = "Funding Information: This work is supported by DTRA. The authors are grateful to Lew Cohn of DTRA and Ken Galloway of Vanderbilt University for their continuing support of this work.",

year = "2000",

doi = "10.1109/23.856473",

language = "English (US)",

volume = "47",

pages = "514--518",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3 PART 1",

}

TY - JOUR

T1 - Modeling bjt radiation response with non-uniform energy distributions of interface traps

AU - Barnaby, H. J.

AU - Cirba, C.

AU - Schrimpf, R. D.

AU - Rosier, S. L.

AU - Fouillat, P.

AU - Montagner, X.

N1 - Funding Information: This work is supported by DTRA. The authors are grateful to Lew Cohn of DTRA and Ken Galloway of Vanderbilt University for their continuing support of this work.

PY - 2000

Y1 - 2000

N2 - Radiation-induced oxide defects that degrade electrical characteristics of BJTs can be measured with the use of gated diodes. The buildup of defects and their effect on device radiation response are modeled with computer simulation.

AB - Radiation-induced oxide defects that degrade electrical characteristics of BJTs can be measured with the use of gated diodes. The buildup of defects and their effect on device radiation response are modeled with computer simulation.

UR - http://www.scopus.com/inward/record.url?scp=0034205962&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034205962&partnerID=8YFLogxK

U2 - 10.1109/23.856473

DO - 10.1109/23.856473

M3 - Article

AN - SCOPUS:0034205962

SN - 0018-9499

VL - 47

SP - 514

EP - 518

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 3 PART 1

ER -

Modeling bjt radiation response with non-uniform energy distributions of interface traps

Abstract

ASJC Scopus subject areas

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