Modeling bjt radiation response with non-uniform energy distributions of interface traps

H. J. Barnaby, C. Cirba, R. D. Schrimpf, S. L. Rosier, P. Fouillat, X. Montagner

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

Radiation-induced oxide defects that degrade electrical characteristics of BJTs can be measured with the use of gated diodes. The buildup of defects and their effect on device radiation response are modeled with computer simulation.

Original languageEnglish (US)
Pages (from-to)514-518
Number of pages5
JournalIEEE Transactions on Nuclear Science
Volume47
Issue number3 PART 1
StatePublished - Dec 1 2000
Externally publishedYes

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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  • Cite this

    Barnaby, H. J., Cirba, C., Schrimpf, R. D., Rosier, S. L., Fouillat, P., & Montagner, X. (2000). Modeling bjt radiation response with non-uniform energy distributions of interface traps. IEEE Transactions on Nuclear Science, 47(3 PART 1), 514-518.