Abstract
The synergistic effect between Total Ionizing Dose (TID) and Analog Single Event Transient (ASET) in LM124 operational amplifiers (opamps) from three different manufacturers is investigated. This effect is clearly identified on only two manufacturers by three, highlighting manufacturer dependent. In fact, significant variations were observed on both the TID sensitivity and the ASET response of LM124 devices from different manufacturers. Hypotheses are made on the cause of the differences observed. A previously developed ASET simulation tool is used to model the transient response. The effects of TID on devices are taken into account in the model by injecting the variations of key electrical parameters obtained during Co$60 irradiation. An excellent agreement is observed between the experimental responses and the model outputs, independently of the TID level, the bias configuration and the manufacturer of the device.
Original language | English (US) |
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Article number | 6636097 |
Pages (from-to) | 4430-4438 |
Number of pages | 9 |
Journal | IEEE Transactions on Nuclear Science |
Volume | 60 |
Issue number | 6 |
DOIs | |
State | Published - Dec 2013 |
Externally published | Yes |
Keywords
- Bipolar analog integrated circuits
- circuit modeling
- ionizing dose
- single event transient
- transient response
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
- Electrical and Electronic Engineering