TY - GEN
T1 - Modeling Alloy Clustering Limited Low-Field Electron Mobility in GaN FinFETs
AU - Kumar, Viswanathan Naveen
AU - Vasileska, Dragica
AU - Povolotskyi, Michael
N1 - Funding Information:
This work was supported in part by the National Science Foundation under grant number NSF ECCS-2025490. 978-1-6654-9767-1/22/$31.00 ©2022 IEEE
Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - In the last few years, GaN FinFETs are being considered as promising candidates for lower voltage applications over conventional HEMT devices. At the same time, GaN-based devices can operate in very low temperature environments that are relevant for superconducting and quantum computing applications. For example, due to its polarization-induced doping, GaN can overcome the carrier freeze-out challenges of other technologies such as doped silicon. This technology is not without problems, however. Structural inhomogeneity at the AlGaN/GaN hetero-interface, such as alloy clustering, becomes significant as the FinFET dimensions decrease. In this work, scattering rate due to alloy clustering is derived for Quasi-1D systems and added as an additional scattering mechanism in the in-house Monte Carlo transport kernel. Our simulation results show that alloy clustering limiting mobility is significant at lower temperatures. Therefore, any cryogenic analysis of GaN FinFETs must include the impact of alloy clustering.
AB - In the last few years, GaN FinFETs are being considered as promising candidates for lower voltage applications over conventional HEMT devices. At the same time, GaN-based devices can operate in very low temperature environments that are relevant for superconducting and quantum computing applications. For example, due to its polarization-induced doping, GaN can overcome the carrier freeze-out challenges of other technologies such as doped silicon. This technology is not without problems, however. Structural inhomogeneity at the AlGaN/GaN hetero-interface, such as alloy clustering, becomes significant as the FinFET dimensions decrease. In this work, scattering rate due to alloy clustering is derived for Quasi-1D systems and added as an additional scattering mechanism in the in-house Monte Carlo transport kernel. Our simulation results show that alloy clustering limiting mobility is significant at lower temperatures. Therefore, any cryogenic analysis of GaN FinFETs must include the impact of alloy clustering.
KW - Alloy Clustering
KW - cryogenic temperature operation
KW - FinFETs
KW - GaN
KW - Monte Carlo
KW - Q1D system
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U2 - 10.1109/LAEDC54796.2022.9908185
DO - 10.1109/LAEDC54796.2022.9908185
M3 - Conference contribution
AN - SCOPUS:85141353897
T3 - 2022 IEEE Latin America Electron Devices Conference, LAEDC 2022
BT - 2022 IEEE Latin America Electron Devices Conference, LAEDC 2022
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2022 IEEE Latin America Electron Devices Conference, LAEDC 2022
Y2 - 4 July 2022 through 6 July 2022
ER -