Modal properties of semiconductor nanowires for laser applications

A. V. Maslov, Cun-Zheng Ning

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

We review the basic electromagnetic properties of semiconductor nanowires which are required to evaluate their performance as lasers. These properties include the dispersions for guided modes, mode spacing, reflectivities from the nanowire facets, directionality and polarization of far fields, and confinement factors. We also discuss features that distinguish nanowire lasers from the usual heterostructure lasers.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsM. Osinski, H. Amano, F. Henneberger
Pages24-30
Number of pages7
Volume5349
DOIs
StatePublished - 2004
Externally publishedYes
EventPhysics and Simulation of Optoelectronic Devices XII - San Jose, CA, United States
Duration: Jan 26 2004Jan 29 2004

Other

OtherPhysics and Simulation of Optoelectronic Devices XII
CountryUnited States
CitySan Jose, CA
Period1/26/041/29/04

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Keywords

  • Confinement factors
  • Far-field diagram
  • Guided waves
  • Lasers
  • Nanowires

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Maslov, A. V., & Ning, C-Z. (2004). Modal properties of semiconductor nanowires for laser applications. In M. Osinski, H. Amano, & F. Henneberger (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 5349, pp. 24-30) https://doi.org/10.1117/12.529364