MOCVD of platinum films from (CH3)3CH 3CpPt and Pt(acac)2: Nanostructure, conformality, and electrical resistivity

Jaydeb Goswami; Chang Gong Wang; Wei Cao; Sandwip Dey

doi:10.1002/cvde.200306240

MOCVD of platinum films from (CH₃)₃CH ₃CpPt and Pt(acac)₂: Nanostructure, conformality, and electrical resistivity

Jaydeb Goswami, Chang Gong Wang, Wei Cao, Sandwip Dey

Chemical Engineering

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

A potentially manufacturable liquid-source MOCVD process was applied to deposit platinum (Pt) films (12-140 nm) on thermally oxidized Si substrates. The deposition of Pt films was carried out at a substrate temperature of 350°C by oxygen-assisted pyrolysis of complex precursors in a low-pressure, hot-wall reactor. The effects of two different metal-organic precursors, a) trimethyl methyl cyclopentadienyl platinum [(CH₃)₃CH ₃CpPt], and b) platinum acetylacetonate [Pt(acac)₂], on the properties of Pt films were studied. Although the polycrystalline Pt films deposited from Pt(acac)₂ exhibited a preferred (111) orientation with a X-ray intensity ratio of I₍₁₁₁₎/I₍₂₀₀₎ = 40, the films deposited from (CH₃)₃CH₃CpPt were highly (111) oriented with I₍₁₁₁₎/I₍₂₀₀₎ = 270. The following properties were typical of Pt films from Pt(acac)₂ as compared to Pt films from (CH₃)₃CH₃CpPt: finer grain size (25 nm vs. 50 nm), smaller root mean square (rms) surface roughness (5 nm vs. 15 nm), and better step coverage (95 % vs. 35 %). These experimental findings indicated that growth of Pt films from Pt(acac)₂ occurred under the kinetically-limited regime, whereas the deposition of Pt from (CH ₃)₃CH₃CpPt was limited by the mass transport rate. Additionally, the temperature (4.2-293 K) dependence of the electrical resistivities (p) of Pt films was measured and the electron mean free paths were estimated. It was observed that ρ(T) deviated from Matthiessen's rule.

Original language	English (US)
Pages (from-to)	213-220
Number of pages	8
Journal	Chemical Vapor Deposition
Volume	9
Issue number	4
DOIs	https://doi.org/10.1002/cvde.200306240
State	Published - Aug 2003

Keywords

Liquid source
MOCVD
Platinum
Thin film

ASJC Scopus subject areas

General Chemistry
Surfaces and Interfaces
Process Chemistry and Technology

Access to Document

10.1002/cvde.200306240

Cite this

@article{163ecc9a1c604cc6874f701c7d2d64ba,

title = "MOCVD of platinum films from (CH3)3CH 3CpPt and Pt(acac)2: Nanostructure, conformality, and electrical resistivity",

abstract = "A potentially manufacturable liquid-source MOCVD process was applied to deposit platinum (Pt) films (12-140 nm) on thermally oxidized Si substrates. The deposition of Pt films was carried out at a substrate temperature of 350°C by oxygen-assisted pyrolysis of complex precursors in a low-pressure, hot-wall reactor. The effects of two different metal-organic precursors, a) trimethyl methyl cyclopentadienyl platinum [(CH3)3CH 3CpPt], and b) platinum acetylacetonate [Pt(acac)2], on the properties of Pt films were studied. Although the polycrystalline Pt films deposited from Pt(acac)2 exhibited a preferred (111) orientation with a X-ray intensity ratio of I(111)/I(200) = 40, the films deposited from (CH3)3CH3CpPt were highly (111) oriented with I(111)/I(200) = 270. The following properties were typical of Pt films from Pt(acac)2 as compared to Pt films from (CH3)3CH3CpPt: finer grain size (25 nm vs. 50 nm), smaller root mean square (rms) surface roughness (5 nm vs. 15 nm), and better step coverage (95 % vs. 35 %). These experimental findings indicated that growth of Pt films from Pt(acac)2 occurred under the kinetically-limited regime, whereas the deposition of Pt from (CH 3)3CH3CpPt was limited by the mass transport rate. Additionally, the temperature (4.2-293 K) dependence of the electrical resistivities (p) of Pt films was measured and the electron mean free paths were estimated. It was observed that ρ(T) deviated from Matthiessen's rule.",

keywords = "Liquid source, MOCVD, Platinum, Thin film",

author = "Jaydeb Goswami and Wang, {Chang Gong} and Wei Cao and Sandwip Dey",

year = "2003",

month = aug,

doi = "10.1002/cvde.200306240",

language = "English (US)",

volume = "9",

pages = "213--220",

journal = "Chemical Vapor Deposition",

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T1 - MOCVD of platinum films from (CH3)3CH 3CpPt and Pt(acac)2

T2 - Nanostructure, conformality, and electrical resistivity

AU - Goswami, Jaydeb

AU - Wang, Chang Gong

AU - Cao, Wei

AU - Dey, Sandwip

PY - 2003/8

Y1 - 2003/8

N2 - A potentially manufacturable liquid-source MOCVD process was applied to deposit platinum (Pt) films (12-140 nm) on thermally oxidized Si substrates. The deposition of Pt films was carried out at a substrate temperature of 350°C by oxygen-assisted pyrolysis of complex precursors in a low-pressure, hot-wall reactor. The effects of two different metal-organic precursors, a) trimethyl methyl cyclopentadienyl platinum [(CH3)3CH 3CpPt], and b) platinum acetylacetonate [Pt(acac)2], on the properties of Pt films were studied. Although the polycrystalline Pt films deposited from Pt(acac)2 exhibited a preferred (111) orientation with a X-ray intensity ratio of I(111)/I(200) = 40, the films deposited from (CH3)3CH3CpPt were highly (111) oriented with I(111)/I(200) = 270. The following properties were typical of Pt films from Pt(acac)2 as compared to Pt films from (CH3)3CH3CpPt: finer grain size (25 nm vs. 50 nm), smaller root mean square (rms) surface roughness (5 nm vs. 15 nm), and better step coverage (95 % vs. 35 %). These experimental findings indicated that growth of Pt films from Pt(acac)2 occurred under the kinetically-limited regime, whereas the deposition of Pt from (CH 3)3CH3CpPt was limited by the mass transport rate. Additionally, the temperature (4.2-293 K) dependence of the electrical resistivities (p) of Pt films was measured and the electron mean free paths were estimated. It was observed that ρ(T) deviated from Matthiessen's rule.

AB - A potentially manufacturable liquid-source MOCVD process was applied to deposit platinum (Pt) films (12-140 nm) on thermally oxidized Si substrates. The deposition of Pt films was carried out at a substrate temperature of 350°C by oxygen-assisted pyrolysis of complex precursors in a low-pressure, hot-wall reactor. The effects of two different metal-organic precursors, a) trimethyl methyl cyclopentadienyl platinum [(CH3)3CH 3CpPt], and b) platinum acetylacetonate [Pt(acac)2], on the properties of Pt films were studied. Although the polycrystalline Pt films deposited from Pt(acac)2 exhibited a preferred (111) orientation with a X-ray intensity ratio of I(111)/I(200) = 40, the films deposited from (CH3)3CH3CpPt were highly (111) oriented with I(111)/I(200) = 270. The following properties were typical of Pt films from Pt(acac)2 as compared to Pt films from (CH3)3CH3CpPt: finer grain size (25 nm vs. 50 nm), smaller root mean square (rms) surface roughness (5 nm vs. 15 nm), and better step coverage (95 % vs. 35 %). These experimental findings indicated that growth of Pt films from Pt(acac)2 occurred under the kinetically-limited regime, whereas the deposition of Pt from (CH 3)3CH3CpPt was limited by the mass transport rate. Additionally, the temperature (4.2-293 K) dependence of the electrical resistivities (p) of Pt films was measured and the electron mean free paths were estimated. It was observed that ρ(T) deviated from Matthiessen's rule.

KW - Liquid source

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KW - Platinum

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