Abstract
We investigate electron transport in silicon nanowires taking into account acoustic, non-polar optical phonons and surface/interface roughness scattering. We find that at very high transverse fields the reduced density of final states to which the carriers can scatter into gives rise to a reduced influence of interface-roughness scattering, which is promising result from a fabrication point of view.
| Original language | English (US) |
|---|---|
| Title of host publication | 2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings |
| Pages | 13-15 |
| Number of pages | 3 |
| Volume | 3 |
| State | Published - 2006 |
| Event | 2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings - Boston, MA, United States Duration: May 7 2006 → May 11 2006 |
Other
| Other | 2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings |
|---|---|
| Country/Territory | United States |
| City | Boston, MA |
| Period | 5/7/06 → 5/11/06 |
Keywords
- Mobility
- Monte Carlo
- Nanowires
- Surface-roughness
ASJC Scopus subject areas
- Engineering(all)