Abstract

We investigate electron transport in silicon nanowires taking into account acoustic, non-polar optical phonons and surface/interface roughness scattering. We find that at very high transverse fields the reduced density of final states to which the carriers can scatter into gives rise to a reduced influence of interface-roughness scattering, which is promising result from a fabrication point of view.

Original languageEnglish (US)
Title of host publication2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings
Pages13-15
Number of pages3
Volume3
Publication statusPublished - 2006
Event2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings - Boston, MA, United States
Duration: May 7 2006May 11 2006

Other

Other2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings
CountryUnited States
CityBoston, MA
Period5/7/065/11/06

    Fingerprint

Keywords

  • Mobility
  • Monte Carlo
  • Nanowires
  • Surface-roughness

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Ramayya, E., Vasileska, D., Goodnick, S., & Knezevic, I. (2006). Mobility of electrons in rectangular Si nanowires. In 2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings (Vol. 3, pp. 13-15)