Mobility of electrons in rectangular Si nanowires

E. Ramayya; Dragica Vasileska; Stephen Goodnick; I. Knezevic

Mobility of electrons in rectangular Si nanowires

E. Ramayya, Dragica Vasileska, Stephen Goodnick, I. Knezevic

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We investigate electron transport in silicon nanowires taking into account acoustic, non-polar optical phonons and surface/interface roughness scattering. We find that at very high transverse fields the reduced density of final states to which the carriers can scatter into gives rise to a reduced influence of interface-roughness scattering, which is promising result from a fabrication point of view.

Original language	English (US)
Title of host publication	2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings
Pages	13-15
Number of pages	3
Volume	3
State	Published - 2006
Event	2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings - Boston, MA, United States Duration: May 7 2006 → May 11 2006

Other

Other	2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings
Country/Territory	United States
City	Boston, MA
Period	5/7/06 → 5/11/06

Keywords

Mobility
Monte Carlo
Nanowires
Surface-roughness

ASJC Scopus subject areas

General Engineering

Cite this

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title = "Mobility of electrons in rectangular Si nanowires",

abstract = "We investigate electron transport in silicon nanowires taking into account acoustic, non-polar optical phonons and surface/interface roughness scattering. We find that at very high transverse fields the reduced density of final states to which the carriers can scatter into gives rise to a reduced influence of interface-roughness scattering, which is promising result from a fabrication point of view.",

keywords = "Mobility, Monte Carlo, Nanowires, Surface-roughness",

author = "E. Ramayya and Dragica Vasileska and Stephen Goodnick and I. Knezevic",

year = "2006",

language = "English (US)",

volume = "3",

pages = "13--15",

booktitle = "2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings",

note = "2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings ; Conference date: 07-05-2006 Through 11-05-2006",

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TY - GEN

T1 - Mobility of electrons in rectangular Si nanowires

AU - Ramayya, E.

AU - Vasileska, Dragica

AU - Goodnick, Stephen

AU - Knezevic, I.

PY - 2006

Y1 - 2006

N2 - We investigate electron transport in silicon nanowires taking into account acoustic, non-polar optical phonons and surface/interface roughness scattering. We find that at very high transverse fields the reduced density of final states to which the carriers can scatter into gives rise to a reduced influence of interface-roughness scattering, which is promising result from a fabrication point of view.

AB - We investigate electron transport in silicon nanowires taking into account acoustic, non-polar optical phonons and surface/interface roughness scattering. We find that at very high transverse fields the reduced density of final states to which the carriers can scatter into gives rise to a reduced influence of interface-roughness scattering, which is promising result from a fabrication point of view.

KW - Mobility

KW - Monte Carlo

KW - Nanowires

KW - Surface-roughness

UR - http://www.scopus.com/inward/record.url?scp=33845212001&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33845212001&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:33845212001

VL - 3

SP - 13

EP - 15

BT - 2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings

T2 - 2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings

Y2 - 7 May 2006 through 11 May 2006

ER -

Mobility of electrons in rectangular Si nanowires

Abstract

Other

Keywords

ASJC Scopus subject areas

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