Mobility degradation in gated Si:SiGe quantum wells with thermally grown oxides

R. S. Prasad, T. J. Thornton, S. Kanjanachuchai, J. Fernández, A. Matsumura

Research output: Contribution to journalArticle

12 Scopus citations


The authors have grown thermal oxides on the silicon cap layer of modulation doped n-channel Si:SiGe quantum wells. For growth temperatures of 650°C they have observed a degradation of the low temperature electron mobility accompanied by a small increase in the sheet density. Some possible origins for this mobility degradation are discussed.

Original languageEnglish (US)
Pages (from-to)1876-1878
Number of pages3
JournalElectronics Letters
Issue number21
StatePublished - Oct 12 1995



  • Carrier mobility
  • Semiconductor quantum wells
  • Silicon-germanium

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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