MnS/ZnSe on GaAs grown by molecular beam epitaxy

S. Sivananthan, L. Wang, R. Sporken, J. Chen, Brian Skromme, David Smith

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Zinc-blende MnS/ZnSe heterostructures on GaAs(100) have been characterized by X-ray photoelectron spectroscopy (XPS), optical methods, and transmission electron microscopy (TEM). XPS spectra indicated that the MnS/ZnSe interface is sharp and that the layers are of proper stoichiometry. TEM revealed isolated {111} stacking faults but confirmed the overall nigh crystalline quality and coherence of the MnS/ZnSe interface. XPS suggests a small valence band discontinuity (ΔEv) of about 140 meV with a type IIA alignment. This result was supported by low-temperature photoluminescence (PL) measurements on a Mns/ZnSe superlattice. No peaks were observed above the ZnSe band gap suggesting that the alignment was not type I. A previously unobserved broad PL peak was seen at about 2.77-2.78 eV, approximately 50 meV below the ZnSe bandgap.

Original languageEnglish (US)
Pages (from-to)94-98
Number of pages5
JournalJournal of Crystal Growth
Volume159
Issue number1-4
StatePublished - Feb 1996

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Molecular beam epitaxy
molecular beam epitaxy
X ray photoelectron spectroscopy
photoelectron spectroscopy
Photoluminescence
Energy gap
alignment
Transmission electron microscopy
photoluminescence
transmission electron microscopy
x rays
Stacking faults
Valence bands
crystal defects
Stoichiometry
Heterojunctions
Zinc
stoichiometry
discontinuity
zinc

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Sivananthan, S., Wang, L., Sporken, R., Chen, J., Skromme, B., & Smith, D. (1996). MnS/ZnSe on GaAs grown by molecular beam epitaxy. Journal of Crystal Growth, 159(1-4), 94-98.

MnS/ZnSe on GaAs grown by molecular beam epitaxy. / Sivananthan, S.; Wang, L.; Sporken, R.; Chen, J.; Skromme, Brian; Smith, David.

In: Journal of Crystal Growth, Vol. 159, No. 1-4, 02.1996, p. 94-98.

Research output: Contribution to journalArticle

Sivananthan, S, Wang, L, Sporken, R, Chen, J, Skromme, B & Smith, D 1996, 'MnS/ZnSe on GaAs grown by molecular beam epitaxy', Journal of Crystal Growth, vol. 159, no. 1-4, pp. 94-98.
Sivananthan S, Wang L, Sporken R, Chen J, Skromme B, Smith D. MnS/ZnSe on GaAs grown by molecular beam epitaxy. Journal of Crystal Growth. 1996 Feb;159(1-4):94-98.
Sivananthan, S. ; Wang, L. ; Sporken, R. ; Chen, J. ; Skromme, Brian ; Smith, David. / MnS/ZnSe on GaAs grown by molecular beam epitaxy. In: Journal of Crystal Growth. 1996 ; Vol. 159, No. 1-4. pp. 94-98.
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