MnS/ZnSe on GaAs grown by molecular beam epitaxy

S. Sivananthan, L. Wang, R. Sporken, J. Chen, Brian Skromme, David Smith

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Abstract

Zinc-blende MnS/ZnSe heterostructures on GaAs(100) have been characterized by X-ray photoelectron spectroscopy (XPS), optical methods, and transmission electron microscopy (TEM). XPS spectra indicated that the MnS/ZnSe interface is sharp and that the layers are of proper stoichiometry. TEM revealed isolated {111} stacking faults but confirmed the overall nigh crystalline quality and coherence of the MnS/ZnSe interface. XPS suggests a small valence band discontinuity (ΔEv) of about 140 meV with a type IIA alignment. This result was supported by low-temperature photoluminescence (PL) measurements on a Mns/ZnSe superlattice. No peaks were observed above the ZnSe band gap suggesting that the alignment was not type I. A previously unobserved broad PL peak was seen at about 2.77-2.78 eV, approximately 50 meV below the ZnSe bandgap.

Original languageEnglish (US)
Pages (from-to)94-98
Number of pages5
JournalJournal of Crystal Growth
Volume159
Issue number1-4
DOIs
StatePublished - Feb 1996

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ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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