Abstract

This study reports the operational instability and failure causing defect mechanisms of indium gallium zinc oxides based thin film transistors (TFTs) under practical, combined bias and illumination stress conditions. The effect of the illumination stress with light source of different wavelengths (410 nm, 467 nm, 532 nm, and 632 nm) has been explained. Wavelengths shorter than green light (532 nm) demonstrate creation of ionized vacancies and subsequent generation of excess carriers that alter TFT functions. Recovery evaluations performed upon removal of combinatory stresses exhibits incomplete recovery due to incapacity in regenerating neutral oxygen vacancies. The Ion/Ioff values show an increase by an order of magnitude when compared to previous studies where the Ion/Ioff is reduced. This can be contributed to the reduced defect and vacancy densities due to the effective post anneal process.

Original languageEnglish (US)
Title of host publicationECS Transactions
Pages179-184
Number of pages6
Volume50
Edition8
DOIs
StatePublished - 2012
Event11th Symposium on Thin Film Transistor Technologies, TFT 2012 - PRiME 2012 - Honolulu, HI, United States
Duration: Oct 8 2012Oct 10 2012

Other

Other11th Symposium on Thin Film Transistor Technologies, TFT 2012 - PRiME 2012
CountryUnited States
CityHonolulu, HI
Period10/8/1210/10/12

Fingerprint

Thin film transistors
Oxide films
Irradiation
Vacancies
Lighting
Recovery
Wavelength
Defects
Ions
Gallium
Oxygen vacancies
Zinc oxide
Indium
Light sources

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Alford, T., Vemuri, R. N. P., & Mathews, W. P. (2012). Mixed oxide thin film transistors under combinatory optical irradiation and electrical bias. In ECS Transactions (8 ed., Vol. 50, pp. 179-184) https://doi.org/10.1149/05008.0179ecst

Mixed oxide thin film transistors under combinatory optical irradiation and electrical bias. / Alford, Terry; Vemuri, Rajitha N P; Mathews, Winnie P.

ECS Transactions. Vol. 50 8. ed. 2012. p. 179-184.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Alford, T, Vemuri, RNP & Mathews, WP 2012, Mixed oxide thin film transistors under combinatory optical irradiation and electrical bias. in ECS Transactions. 8 edn, vol. 50, pp. 179-184, 11th Symposium on Thin Film Transistor Technologies, TFT 2012 - PRiME 2012, Honolulu, HI, United States, 10/8/12. https://doi.org/10.1149/05008.0179ecst
Alford, Terry ; Vemuri, Rajitha N P ; Mathews, Winnie P. / Mixed oxide thin film transistors under combinatory optical irradiation and electrical bias. ECS Transactions. Vol. 50 8. ed. 2012. pp. 179-184
@inproceedings{463d51db82ee45f5a80615da17715bc3,
title = "Mixed oxide thin film transistors under combinatory optical irradiation and electrical bias",
abstract = "This study reports the operational instability and failure causing defect mechanisms of indium gallium zinc oxides based thin film transistors (TFTs) under practical, combined bias and illumination stress conditions. The effect of the illumination stress with light source of different wavelengths (410 nm, 467 nm, 532 nm, and 632 nm) has been explained. Wavelengths shorter than green light (532 nm) demonstrate creation of ionized vacancies and subsequent generation of excess carriers that alter TFT functions. Recovery evaluations performed upon removal of combinatory stresses exhibits incomplete recovery due to incapacity in regenerating neutral oxygen vacancies. The Ion/Ioff values show an increase by an order of magnitude when compared to previous studies where the Ion/Ioff is reduced. This can be contributed to the reduced defect and vacancy densities due to the effective post anneal process.",
author = "Terry Alford and Vemuri, {Rajitha N P} and Mathews, {Winnie P.}",
year = "2012",
doi = "10.1149/05008.0179ecst",
language = "English (US)",
isbn = "9781607683568",
volume = "50",
pages = "179--184",
booktitle = "ECS Transactions",
edition = "8",

}

TY - GEN

T1 - Mixed oxide thin film transistors under combinatory optical irradiation and electrical bias

AU - Alford, Terry

AU - Vemuri, Rajitha N P

AU - Mathews, Winnie P.

PY - 2012

Y1 - 2012

N2 - This study reports the operational instability and failure causing defect mechanisms of indium gallium zinc oxides based thin film transistors (TFTs) under practical, combined bias and illumination stress conditions. The effect of the illumination stress with light source of different wavelengths (410 nm, 467 nm, 532 nm, and 632 nm) has been explained. Wavelengths shorter than green light (532 nm) demonstrate creation of ionized vacancies and subsequent generation of excess carriers that alter TFT functions. Recovery evaluations performed upon removal of combinatory stresses exhibits incomplete recovery due to incapacity in regenerating neutral oxygen vacancies. The Ion/Ioff values show an increase by an order of magnitude when compared to previous studies where the Ion/Ioff is reduced. This can be contributed to the reduced defect and vacancy densities due to the effective post anneal process.

AB - This study reports the operational instability and failure causing defect mechanisms of indium gallium zinc oxides based thin film transistors (TFTs) under practical, combined bias and illumination stress conditions. The effect of the illumination stress with light source of different wavelengths (410 nm, 467 nm, 532 nm, and 632 nm) has been explained. Wavelengths shorter than green light (532 nm) demonstrate creation of ionized vacancies and subsequent generation of excess carriers that alter TFT functions. Recovery evaluations performed upon removal of combinatory stresses exhibits incomplete recovery due to incapacity in regenerating neutral oxygen vacancies. The Ion/Ioff values show an increase by an order of magnitude when compared to previous studies where the Ion/Ioff is reduced. This can be contributed to the reduced defect and vacancy densities due to the effective post anneal process.

UR - http://www.scopus.com/inward/record.url?scp=84885735281&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84885735281&partnerID=8YFLogxK

U2 - 10.1149/05008.0179ecst

DO - 10.1149/05008.0179ecst

M3 - Conference contribution

SN - 9781607683568

VL - 50

SP - 179

EP - 184

BT - ECS Transactions

ER -