Abstract

This study reports the operational instability and failure causing defect mechanisms of indium gallium zinc oxides based thin film transistors (TFTs) under practical, combined bias and illumination stress conditions. The effect of the illumination stress with light source of different wavelengths (410 nm, 467 nm, 532 nm, and 632 nm) has been explained. Wavelengths shorter than green light (532 nm) demonstrate creation of ionized vacancies and subsequent generation of excess carriers that alter TFT functions. Recovery evaluations performed upon removal of combinatory stresses exhibits incomplete recovery due to incapacity in regenerating neutral oxygen vacancies. The Ion/Ioff values show an increase by an order of magnitude when compared to previous studies where the Ion/Ioff is reduced. This can be contributed to the reduced defect and vacancy densities due to the effective post anneal process.

Original languageEnglish (US)
Title of host publicationThin Film Transistors 11, TFT 2012
Pages179-184
Number of pages6
Edition8
DOIs
StatePublished - Dec 1 2012
Event11th Symposium on Thin Film Transistor Technologies, TFT 2012 - PRiME 2012 - Honolulu, HI, United States
Duration: Oct 8 2012Oct 10 2012

Publication series

NameECS Transactions
Number8
Volume50
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other11th Symposium on Thin Film Transistor Technologies, TFT 2012 - PRiME 2012
CountryUnited States
CityHonolulu, HI
Period10/8/1210/10/12

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Alford, T., Vemuri, R. N. P., & Mathews, W. P. (2012). Mixed oxide thin film transistors under combinatory optical irradiation and electrical bias. In Thin Film Transistors 11, TFT 2012 (8 ed., pp. 179-184). (ECS Transactions; Vol. 50, No. 8). https://doi.org/10.1149/05008.0179ecst