Mismatched heteroepitaxy of tetrahedral semiconductors with Si via ZrB 2 templates

Rahul Trivedi; Po Liang Liu; Radek Roucka; John Tolle; Andrew Chizmeshya; Ignatius S T Tsong; John Kouvetakis

doi:10.1021/cm0510918

Mismatched heteroepitaxy of tetrahedral semiconductors with Si via ZrB ₂ templates

Rahul Trivedi, Po Liang Liu, Radek Roucka, John Tolle, Andrew Chizmeshya, Ignatius S T Tsong, John Kouvetakis

Research output: Contribution to journal › Article › peer-review

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Abstract

We demonstrate integration of cubic SiC (heterostructures and nanostructures) and assemblies of Ge nanoscale islands with Si substrates via a conductive and reflective ZrB ₂ buffer layer. Hexagonal ZrB ₂ is grown on cubic Si(111) via a coincidence-misfit mechanism in which the strain is accommodated by edge dislocations along the interface. Ge islands with uniform sizes and strain-free microstructures were grown on ZrB ₂/Si(111) at 500°C via thermolysis of Ge ₂H ₆, circumventing the strain-driven (Stranski-Krastanov) island formation on Si and associated limitations. Heteroepitaxy between ZrB ₂(0001) and Ge(111) is obtained via alignment of four lattice rows of Ge with every five rows of ZrB ₂, (i.e., "magic mismatch") despite the large difference in lattice constants. Cubic SiC layers with monocrystalline microstructures and atomically abrupt interfaces are grown on ZrB ₂/Si(111) via single source molecular beam epitaxy of C ₂(SiH ₃) ₂ at 800°C. Nanoscale SiC islands with perfectly coherent zinc blende structures are formed at higher temperatures such as 900°C. The SiC(111)/ZrB ₂ interface structures were examined in both cases with high-resolution electron microscopy and compared with optimal bonding configurations derived from theoretical models.

Original language	English (US)
Pages (from-to)	4647-4652
Number of pages	6
Journal	Chemistry of Materials
Volume	17
Issue number	18
DOIs	https://doi.org/10.1021/cm0510918
State	Published - Sep 6 2005

ASJC Scopus subject areas

General Chemistry
General Chemical Engineering
Materials Chemistry

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title = "Mismatched heteroepitaxy of tetrahedral semiconductors with Si via ZrB 2 templates",

abstract = "We demonstrate integration of cubic SiC (heterostructures and nanostructures) and assemblies of Ge nanoscale islands with Si substrates via a conductive and reflective ZrB 2 buffer layer. Hexagonal ZrB 2 is grown on cubic Si(111) via a coincidence-misfit mechanism in which the strain is accommodated by edge dislocations along the interface. Ge islands with uniform sizes and strain-free microstructures were grown on ZrB 2/Si(111) at 500°C via thermolysis of Ge 2H 6, circumventing the strain-driven (Stranski-Krastanov) island formation on Si and associated limitations. Heteroepitaxy between ZrB 2(0001) and Ge(111) is obtained via alignment of four lattice rows of Ge with every five rows of ZrB 2, (i.e., {"}magic mismatch{"}) despite the large difference in lattice constants. Cubic SiC layers with monocrystalline microstructures and atomically abrupt interfaces are grown on ZrB 2/Si(111) via single source molecular beam epitaxy of C 2(SiH 3) 2 at 800°C. Nanoscale SiC islands with perfectly coherent zinc blende structures are formed at higher temperatures such as 900°C. The SiC(111)/ZrB 2 interface structures were examined in both cases with high-resolution electron microscopy and compared with optimal bonding configurations derived from theoretical models.",

author = "Rahul Trivedi and Liu, {Po Liang} and Radek Roucka and John Tolle and Andrew Chizmeshya and Tsong, {Ignatius S T} and John Kouvetakis",

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T1 - Mismatched heteroepitaxy of tetrahedral semiconductors with Si via ZrB 2 templates

AU - Trivedi, Rahul

AU - Liu, Po Liang

AU - Roucka, Radek

AU - Tolle, John

AU - Chizmeshya, Andrew

AU - Tsong, Ignatius S T

AU - Kouvetakis, John

PY - 2005/9/6

Y1 - 2005/9/6

N2 - We demonstrate integration of cubic SiC (heterostructures and nanostructures) and assemblies of Ge nanoscale islands with Si substrates via a conductive and reflective ZrB 2 buffer layer. Hexagonal ZrB 2 is grown on cubic Si(111) via a coincidence-misfit mechanism in which the strain is accommodated by edge dislocations along the interface. Ge islands with uniform sizes and strain-free microstructures were grown on ZrB 2/Si(111) at 500°C via thermolysis of Ge 2H 6, circumventing the strain-driven (Stranski-Krastanov) island formation on Si and associated limitations. Heteroepitaxy between ZrB 2(0001) and Ge(111) is obtained via alignment of four lattice rows of Ge with every five rows of ZrB 2, (i.e., "magic mismatch") despite the large difference in lattice constants. Cubic SiC layers with monocrystalline microstructures and atomically abrupt interfaces are grown on ZrB 2/Si(111) via single source molecular beam epitaxy of C 2(SiH 3) 2 at 800°C. Nanoscale SiC islands with perfectly coherent zinc blende structures are formed at higher temperatures such as 900°C. The SiC(111)/ZrB 2 interface structures were examined in both cases with high-resolution electron microscopy and compared with optimal bonding configurations derived from theoretical models.

AB - We demonstrate integration of cubic SiC (heterostructures and nanostructures) and assemblies of Ge nanoscale islands with Si substrates via a conductive and reflective ZrB 2 buffer layer. Hexagonal ZrB 2 is grown on cubic Si(111) via a coincidence-misfit mechanism in which the strain is accommodated by edge dislocations along the interface. Ge islands with uniform sizes and strain-free microstructures were grown on ZrB 2/Si(111) at 500°C via thermolysis of Ge 2H 6, circumventing the strain-driven (Stranski-Krastanov) island formation on Si and associated limitations. Heteroepitaxy between ZrB 2(0001) and Ge(111) is obtained via alignment of four lattice rows of Ge with every five rows of ZrB 2, (i.e., "magic mismatch") despite the large difference in lattice constants. Cubic SiC layers with monocrystalline microstructures and atomically abrupt interfaces are grown on ZrB 2/Si(111) via single source molecular beam epitaxy of C 2(SiH 3) 2 at 800°C. Nanoscale SiC islands with perfectly coherent zinc blende structures are formed at higher temperatures such as 900°C. The SiC(111)/ZrB 2 interface structures were examined in both cases with high-resolution electron microscopy and compared with optimal bonding configurations derived from theoretical models.

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Mismatched heteroepitaxy of tetrahedral semiconductors with Si via ZrB ₂ templates

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