Misfit strain relaxation in m -plane epitaxy of InGaN on ZnO

Z. H. Wu; K. W. Sun; Q. Y. Wei; A. M. Fischer; Fernando Ponce; Y. Kawai; M. Iwaya; S. Kamiyama; H. Amano; I. Akasaki

doi:10.1063/1.3315944

Misfit strain relaxation in m -plane epitaxy of InGaN on ZnO

Z. H. Wu, K. W. Sun, Q. Y. Wei, A. M. Fischer, Fernando Ponce, Y. Kawai, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki

Physics

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Abstract

The microstructure of m -plane InGaN epilayers grown on m -plane ZnO has been found to depend significantly on indium composition for the range from 0.07 to 0.17, where anisotropic lattice mismatch between InGaN and ZnO results in decreasingly tensile and increasingly compressive stress along the a and c lattice axes, respectively. For indium compositions below ∼0.10, periodic arrays of misfit dislocations with a Burgers vector of 1/3 [11 2- 0] are observed parallel to the [0001] direction. For indium compositions above ∼0.12, generation of basal-plane stacking faults relieve the compressive stress along the [0001] direction. These characteristic mechanisms of strain relaxation should provide new approaches to engineer thick InGaN layers with reduced lattice misfit strain.

Original language	English (US)
Article number	071909
Journal	Applied Physics Letters
Volume	96
Issue number	7
DOIs	https://doi.org/10.1063/1.3315944
State	Published - 2010

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3315944

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@article{a6b9c8adaf3e4761bd65f937fdf28e7b,

title = "Misfit strain relaxation in m -plane epitaxy of InGaN on ZnO",

abstract = "The microstructure of m -plane InGaN epilayers grown on m -plane ZnO has been found to depend significantly on indium composition for the range from 0.07 to 0.17, where anisotropic lattice mismatch between InGaN and ZnO results in decreasingly tensile and increasingly compressive stress along the a and c lattice axes, respectively. For indium compositions below ∼0.10, periodic arrays of misfit dislocations with a Burgers vector of 1/3 [11 2- 0] are observed parallel to the [0001] direction. For indium compositions above ∼0.12, generation of basal-plane stacking faults relieve the compressive stress along the [0001] direction. These characteristic mechanisms of strain relaxation should provide new approaches to engineer thick InGaN layers with reduced lattice misfit strain.",

author = "Wu, {Z. H.} and Sun, {K. W.} and Wei, {Q. Y.} and Fischer, {A. M.} and Fernando Ponce and Y. Kawai and M. Iwaya and S. Kamiyama and H. Amano and I. Akasaki",

note = "Funding Information: Research at Arizona State University was supported by Nichia Corporation.",

year = "2010",

doi = "10.1063/1.3315944",

language = "English (US)",

volume = "96",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "7",

}

TY - JOUR

T1 - Misfit strain relaxation in m -plane epitaxy of InGaN on ZnO

AU - Wu, Z. H.

AU - Sun, K. W.

AU - Wei, Q. Y.

AU - Fischer, A. M.

AU - Ponce, Fernando

AU - Kawai, Y.

AU - Iwaya, M.

AU - Kamiyama, S.

AU - Amano, H.

AU - Akasaki, I.

N1 - Funding Information: Research at Arizona State University was supported by Nichia Corporation.

PY - 2010

Y1 - 2010

N2 - The microstructure of m -plane InGaN epilayers grown on m -plane ZnO has been found to depend significantly on indium composition for the range from 0.07 to 0.17, where anisotropic lattice mismatch between InGaN and ZnO results in decreasingly tensile and increasingly compressive stress along the a and c lattice axes, respectively. For indium compositions below ∼0.10, periodic arrays of misfit dislocations with a Burgers vector of 1/3 [11 2- 0] are observed parallel to the [0001] direction. For indium compositions above ∼0.12, generation of basal-plane stacking faults relieve the compressive stress along the [0001] direction. These characteristic mechanisms of strain relaxation should provide new approaches to engineer thick InGaN layers with reduced lattice misfit strain.

AB - The microstructure of m -plane InGaN epilayers grown on m -plane ZnO has been found to depend significantly on indium composition for the range from 0.07 to 0.17, where anisotropic lattice mismatch between InGaN and ZnO results in decreasingly tensile and increasingly compressive stress along the a and c lattice axes, respectively. For indium compositions below ∼0.10, periodic arrays of misfit dislocations with a Burgers vector of 1/3 [11 2- 0] are observed parallel to the [0001] direction. For indium compositions above ∼0.12, generation of basal-plane stacking faults relieve the compressive stress along the [0001] direction. These characteristic mechanisms of strain relaxation should provide new approaches to engineer thick InGaN layers with reduced lattice misfit strain.

UR - http://www.scopus.com/inward/record.url?scp=77249149447&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77249149447&partnerID=8YFLogxK

U2 - 10.1063/1.3315944

DO - 10.1063/1.3315944

M3 - Article

AN - SCOPUS:77249149447

SN - 0003-6951

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

M1 - 071909

ER -

Misfit strain relaxation in m -plane epitaxy of InGaN on ZnO

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