Mis slow-wave structures over a wide range of parameters

James P K Gilb, Constantine Balanis

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

The high dielectric losses of the semiconducting substrates used in MMIC's and VLSI interconnects can strongly affect all of the characteristics of these lines. No single approximate formulation is accurate over a wide range of substrate parameters or over a large frequency range; thus it is necessary to use a full-wave approach. Multi-conductor MIS structures are analyzed with the spectral domain approach over a wide range of frequency and substrate loss. The modal attenuation and propagation constants are presented for two and four conductor structures as a function of the substrate loss tangent. Single conductor structures are characterized with contour plots showing the complex effective dielectric constant as a function of both frequency and conductivity. MIS slow-wave structures are analyzed for both Si-Si02and GaAs configurations.

Original languageEnglish (US)
Pages (from-to)2148-2154
Number of pages7
JournalIEEE Transactions on Microwave Theory and Techniques
Volume40
Issue number12
DOIs
StatePublished - 1992

Fingerprint

Slow wave structures
conductors
Management information systems
MIS (semiconductors)
Substrates
Monolithic microwave integrated circuits
very large scale integration
Dielectric losses
tangents
dielectric loss
Permittivity
plots
frequency ranges
attenuation
permittivity
formulations
conductivity
propagation
configurations

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Radiation

Cite this

Mis slow-wave structures over a wide range of parameters. / Gilb, James P K; Balanis, Constantine.

In: IEEE Transactions on Microwave Theory and Techniques, Vol. 40, No. 12, 1992, p. 2148-2154.

Research output: Contribution to journalArticle

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