Abstract
A CdZnTe/MgCdTe double-heterostructure (DH) consisting of a 3 μm thick Cd0.9946Zn0.0054Te middle layer that is lattice-matched to an InSb substrate has been grown using molecular beam epitaxy. A long carrier lifetime of 3.4 × 102ns has been demonstrated at room temperature, which is approximately three times as long as that of a CdTe/MgCdTe DH with identical layer thickness. This substantial improvement is due to the reduction in misfit dislocation density in the CdZnTe alloy. In contrast, a CdTe/MgCdTe DH with 3 μm thick CdTe layer grown on an InSb substrate exhibits a strain relaxation of ∼30%, which leads to a wider x-ray diffraction peak, a weaker integrated photoluminescence intensity, and a shorter minority carrier lifetime of 1.0 × 102ns. These findings indicate that CdZnTe lattice-matched to InSb has great potential as applied to high-efficiency solar cells as well as virtual substrates for high-performance large-area HgCdTe focal plane arrays.
| Original language | English (US) |
|---|---|
| Article number | 011207 |
| Journal | Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics |
| Volume | 33 |
| Issue number | 1 |
| DOIs | |
| State | Published - Jan 1 2015 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Process Chemistry and Technology
- Electronic, Optical and Magnetic Materials
- Surfaces, Coatings and Films
- Materials Chemistry
- Instrumentation
Cite this
Minority carrier lifetime of lattice-matched CdZnTe alloy grown on InSb substrates using molecular beam epitaxy. / Liu, Shi; Zhao, Xin Hao; Campbell, Calli; Dinezza, Michael J.; Zhao, Yuan; Zhang, Yong-Hang.
In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 33, No. 1, 011207, 01.01.2015.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Minority carrier lifetime of lattice-matched CdZnTe alloy grown on InSb substrates using molecular beam epitaxy
AU - Liu, Shi
AU - Zhao, Xin Hao
AU - Campbell, Calli
AU - Dinezza, Michael J.
AU - Zhao, Yuan
AU - Zhang, Yong-Hang
PY - 2015/1/1
Y1 - 2015/1/1
N2 - A CdZnTe/MgCdTe double-heterostructure (DH) consisting of a 3 μm thick Cd0.9946Zn0.0054Te middle layer that is lattice-matched to an InSb substrate has been grown using molecular beam epitaxy. A long carrier lifetime of 3.4 × 102ns has been demonstrated at room temperature, which is approximately three times as long as that of a CdTe/MgCdTe DH with identical layer thickness. This substantial improvement is due to the reduction in misfit dislocation density in the CdZnTe alloy. In contrast, a CdTe/MgCdTe DH with 3 μm thick CdTe layer grown on an InSb substrate exhibits a strain relaxation of ∼30%, which leads to a wider x-ray diffraction peak, a weaker integrated photoluminescence intensity, and a shorter minority carrier lifetime of 1.0 × 102ns. These findings indicate that CdZnTe lattice-matched to InSb has great potential as applied to high-efficiency solar cells as well as virtual substrates for high-performance large-area HgCdTe focal plane arrays.
AB - A CdZnTe/MgCdTe double-heterostructure (DH) consisting of a 3 μm thick Cd0.9946Zn0.0054Te middle layer that is lattice-matched to an InSb substrate has been grown using molecular beam epitaxy. A long carrier lifetime of 3.4 × 102ns has been demonstrated at room temperature, which is approximately three times as long as that of a CdTe/MgCdTe DH with identical layer thickness. This substantial improvement is due to the reduction in misfit dislocation density in the CdZnTe alloy. In contrast, a CdTe/MgCdTe DH with 3 μm thick CdTe layer grown on an InSb substrate exhibits a strain relaxation of ∼30%, which leads to a wider x-ray diffraction peak, a weaker integrated photoluminescence intensity, and a shorter minority carrier lifetime of 1.0 × 102ns. These findings indicate that CdZnTe lattice-matched to InSb has great potential as applied to high-efficiency solar cells as well as virtual substrates for high-performance large-area HgCdTe focal plane arrays.
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UR - http://www.scopus.com/inward/citedby.url?scp=84923675828&partnerID=8YFLogxK
U2 - 10.1116/1.4905289
DO - 10.1116/1.4905289
M3 - Article
VL - 33
JO - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
JF - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
SN - 2166-2746
IS - 1
M1 - 011207
ER -