Minority carrier lifetime of lattice-matched CdZnTe alloy grown on InSb substrates using molecular beam epitaxy

Shi Liu; Xin Hao Zhao; Calli Campbell; Michael J. Dinezza; Yuan Zhao; Yong-Hang Zhang

doi:10.1116/1.4905289

Minority carrier lifetime of lattice-matched CdZnTe alloy grown on InSb substrates using molecular beam epitaxy

Shi Liu, Xin Hao Zhao, Calli Campbell, Michael J. Dinezza, Yuan Zhao, Yong-Hang Zhang

Research output: Contribution to journal › Article

14 Scopus citations

Abstract

A CdZnTe/MgCdTe double-heterostructure (DH) consisting of a 3 μm thick Cd_0.9946Zn_0.0054Te middle layer that is lattice-matched to an InSb substrate has been grown using molecular beam epitaxy. A long carrier lifetime of 3.4 × 10²ns has been demonstrated at room temperature, which is approximately three times as long as that of a CdTe/MgCdTe DH with identical layer thickness. This substantial improvement is due to the reduction in misfit dislocation density in the CdZnTe alloy. In contrast, a CdTe/MgCdTe DH with 3 μm thick CdTe layer grown on an InSb substrate exhibits a strain relaxation of ∼30%, which leads to a wider x-ray diffraction peak, a weaker integrated photoluminescence intensity, and a shorter minority carrier lifetime of 1.0 × 10²ns. These findings indicate that CdZnTe lattice-matched to InSb has great potential as applied to high-efficiency solar cells as well as virtual substrates for high-performance large-area HgCdTe focal plane arrays.

Original language	English (US)
Article number	011207
Journal	Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume	33
Issue number	1
DOIs	https://doi.org/10.1116/1.4905289
State	Published - Jan 1 2015

Fingerprint

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

Cite this

Liu, S., Zhao, X. H., Campbell, C., Dinezza, M. J., Zhao, Y., & Zhang, Y-H. (2015). Minority carrier lifetime of lattice-matched CdZnTe alloy grown on InSb substrates using molecular beam epitaxy. Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, 33(1), [011207]. https://doi.org/10.1116/1.4905289

Minority carrier lifetime of lattice-matched CdZnTe alloy grown on InSb substrates using molecular beam epitaxy. / Liu, Shi; Zhao, Xin Hao; Campbell, Calli; Dinezza, Michael J.; Zhao, Yuan; Zhang, Yong-Hang.

In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 33, No. 1, 011207, 01.01.2015.

Research output: Contribution to journal › Article

@article{4bdb08b6a22b465e8de4af9b27969633,

title = "Minority carrier lifetime of lattice-matched CdZnTe alloy grown on InSb substrates using molecular beam epitaxy",

abstract = "A CdZnTe/MgCdTe double-heterostructure (DH) consisting of a 3 μm thick Cd0.9946Zn0.0054Te middle layer that is lattice-matched to an InSb substrate has been grown using molecular beam epitaxy. A long carrier lifetime of 3.4 × 102ns has been demonstrated at room temperature, which is approximately three times as long as that of a CdTe/MgCdTe DH with identical layer thickness. This substantial improvement is due to the reduction in misfit dislocation density in the CdZnTe alloy. In contrast, a CdTe/MgCdTe DH with 3 μm thick CdTe layer grown on an InSb substrate exhibits a strain relaxation of ∼30%, which leads to a wider x-ray diffraction peak, a weaker integrated photoluminescence intensity, and a shorter minority carrier lifetime of 1.0 × 102ns. These findings indicate that CdZnTe lattice-matched to InSb has great potential as applied to high-efficiency solar cells as well as virtual substrates for high-performance large-area HgCdTe focal plane arrays.",

author = "Shi Liu and Zhao, {Xin Hao} and Calli Campbell and Dinezza, {Michael J.} and Yuan Zhao and Yong-Hang Zhang",

year = "2015",

month = jan,

day = "1",

doi = "10.1116/1.4905289",

language = "English (US)",

volume = "33",

journal = "Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics",

issn = "2166-2746",

publisher = "AVS Science and Technology Society",

number = "1",

}

TY - JOUR

T1 - Minority carrier lifetime of lattice-matched CdZnTe alloy grown on InSb substrates using molecular beam epitaxy

AU - Liu, Shi

AU - Zhao, Xin Hao

AU - Campbell, Calli

AU - Dinezza, Michael J.

AU - Zhao, Yuan

AU - Zhang, Yong-Hang

PY - 2015/1/1

Y1 - 2015/1/1

N2 - A CdZnTe/MgCdTe double-heterostructure (DH) consisting of a 3 μm thick Cd0.9946Zn0.0054Te middle layer that is lattice-matched to an InSb substrate has been grown using molecular beam epitaxy. A long carrier lifetime of 3.4 × 102ns has been demonstrated at room temperature, which is approximately three times as long as that of a CdTe/MgCdTe DH with identical layer thickness. This substantial improvement is due to the reduction in misfit dislocation density in the CdZnTe alloy. In contrast, a CdTe/MgCdTe DH with 3 μm thick CdTe layer grown on an InSb substrate exhibits a strain relaxation of ∼30%, which leads to a wider x-ray diffraction peak, a weaker integrated photoluminescence intensity, and a shorter minority carrier lifetime of 1.0 × 102ns. These findings indicate that CdZnTe lattice-matched to InSb has great potential as applied to high-efficiency solar cells as well as virtual substrates for high-performance large-area HgCdTe focal plane arrays.

AB - A CdZnTe/MgCdTe double-heterostructure (DH) consisting of a 3 μm thick Cd0.9946Zn0.0054Te middle layer that is lattice-matched to an InSb substrate has been grown using molecular beam epitaxy. A long carrier lifetime of 3.4 × 102ns has been demonstrated at room temperature, which is approximately three times as long as that of a CdTe/MgCdTe DH with identical layer thickness. This substantial improvement is due to the reduction in misfit dislocation density in the CdZnTe alloy. In contrast, a CdTe/MgCdTe DH with 3 μm thick CdTe layer grown on an InSb substrate exhibits a strain relaxation of ∼30%, which leads to a wider x-ray diffraction peak, a weaker integrated photoluminescence intensity, and a shorter minority carrier lifetime of 1.0 × 102ns. These findings indicate that CdZnTe lattice-matched to InSb has great potential as applied to high-efficiency solar cells as well as virtual substrates for high-performance large-area HgCdTe focal plane arrays.

UR - http://www.scopus.com/inward/record.url?scp=84923675828&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84923675828&partnerID=8YFLogxK

U2 - 10.1116/1.4905289

DO - 10.1116/1.4905289

M3 - Article

AN - SCOPUS:84923675828

VL - 33

JO - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

JF - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

SN - 2166-2746

IS - 1

M1 - 011207

ER -

Access to Document

10.1116/1.4905289