Minority carrier lifetime of lattice-matched CdZnTe alloy grown on InSb substrates using molecular beam epitaxy

Shi Liu, Xin Hao Zhao, Calli Campbell, Michael J. Dinezza, Yuan Zhao, Yong-Hang Zhang

Research output: Contribution to journalArticle

14 Scopus citations

Abstract

A CdZnTe/MgCdTe double-heterostructure (DH) consisting of a 3 μm thick Cd0.9946Zn0.0054Te middle layer that is lattice-matched to an InSb substrate has been grown using molecular beam epitaxy. A long carrier lifetime of 3.4 × 102ns has been demonstrated at room temperature, which is approximately three times as long as that of a CdTe/MgCdTe DH with identical layer thickness. This substantial improvement is due to the reduction in misfit dislocation density in the CdZnTe alloy. In contrast, a CdTe/MgCdTe DH with 3 μm thick CdTe layer grown on an InSb substrate exhibits a strain relaxation of ∼30%, which leads to a wider x-ray diffraction peak, a weaker integrated photoluminescence intensity, and a shorter minority carrier lifetime of 1.0 × 102ns. These findings indicate that CdZnTe lattice-matched to InSb has great potential as applied to high-efficiency solar cells as well as virtual substrates for high-performance large-area HgCdTe focal plane arrays.

Original languageEnglish (US)
Article number011207
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume33
Issue number1
DOIs
StatePublished - Jan 1 2015

    Fingerprint

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this