Minority carrier lifetime and radiation damage coefficients of germanium

Hojun Yoon, Kenneth M. Edmondson, Geoffrey S. Kinsey, Richard King, Peter Hebert, Richard K. Ahrenkiel, B. T. Cavicchi, Nasser H. Karam

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Scopus citations

Abstract

We report on the measurement of minority carrier lifetime and on the radiation damage resistance of bulk Ge. Lifetime measurements are performed using the resonance-coupled photoconductive decay (RCPCD) method. Specifically, we examine the dependence of the lifetime as a function of the Ge resistivity and various 1 MeV electron radiation fluences. We measure hole lifetimes ranging from ∼0.9-34 μs for n-type Ge samples, corresponding to diffusion lengths of ∼30-400 μm. Electron lifetimes in p-type Ge range from ∼0.6-19 μs, corresponding to diffusion lengths of ∼30-420 μm. Lifetime measurements are also made after exposure to 1 MeV electron fluences ranging from 1013 to 1015 cm-2 and these results are used to estimate the minority carrier lifetime and diffusion length damage coefficients Kτ and KL.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Pages842-845
Number of pages4
StatePublished - 2005
Externally publishedYes
Event31st IEEE Photovoltaic Specialists Conference - 2005 - Lake Buena Vista, FL, United States
Duration: Jan 3 2005Jan 7 2005

Other

Other31st IEEE Photovoltaic Specialists Conference - 2005
CountryUnited States
CityLake Buena Vista, FL
Period1/3/051/7/05

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Control and Systems Engineering

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  • Cite this

    Yoon, H., Edmondson, K. M., Kinsey, G. S., King, R., Hebert, P., Ahrenkiel, R. K., Cavicchi, B. T., & Karam, N. H. (2005). Minority carrier lifetime and radiation damage coefficients of germanium. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 842-845)