Minimizing gain degradation in lateral PNP bipolar junction transistors using gate control

H. J. Barnaby, Claude Cirba, R. D. Schrimpf, Steve Kosier, P. Fouillât, X. Montagner

Research output: Contribution to journalArticle

18 Scopus citations

Abstract

Gain degradation in lateral PNP bipolar junction transistors is minimized by controlling the potential of a gate terminal deposited above the active base region. Gate biases that deplete the base during radiation exposure establish electric fields in the base oxide that limit the generation of oxide defects. Conversely, gate biases that accumulate the base during device operation suppress gain degradation by decreasing the probability of carrier recombination with interface states. The results presented in this paper suggest that, for gate controlled LPNP transistors designed for operation in radiation environments, a dynamic control of the gate potential improves the transistor's radiation hardness and extend its operating life.

Original languageEnglish (US)
Pages (from-to)1652-1659
Number of pages8
JournalIEEE Transactions on Nuclear Science
Volume46
Issue number6 PART 1
DOIs
StatePublished - 1999
Externally publishedYes

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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