Gain degradation in lateral PNP bipolar junction transistors is minimized by controlling the potential of a gate terminal deposited above the active base region. Gate biases that deplete the base during radiation exposure establish electric fields in the base oxide that limit the generation of oxide defects. Conversely, gate biases that accumulate the base during device operation suppress gain degradation by decreasing the probability of carrier recombination with interface states. The results presented in this paper suggest that, for gate controlled LPNP transistors designed for operation in radiation environments, a dynamic control of the gate potential improves the transistor's radiation hardness and extend its operating life.
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
- Electrical and Electronic Engineering