Abstract

We describe the large-signal characterization of mm-wave FET power amplifiers with high-Q matching network performed through full band Monte Carlo particle-based device simulations self-consistently coupled with a Harmonic Balance frequency domain circuit solver. Such circuit-device simulations allow to include the effect of the matching network as well as parasitic elements in the large-signal characterization of mm-wave FETs.

Original languageEnglish (US)
Title of host publicationIEEE MTT-S International Microwave Symposium Digest
DOIs
StatePublished - 2012
Event2012 IEEE MTT-S International Microwave Symposium, IMS 2012 - Montreal, QC, Canada
Duration: Jun 17 2012Jun 22 2012

Other

Other2012 IEEE MTT-S International Microwave Symposium, IMS 2012
CountryCanada
CityMontreal, QC
Period6/17/126/22/12

Fingerprint

Wave power
power amplifiers
Field effect transistors
Power amplifiers
Millimeter waves
millimeter waves
simulators
field effect transistors
Simulators
harmonics
Networks (circuits)
Q factors
simulation

Keywords

  • GaN HEMT
  • Harmonic Balance
  • Large-signal
  • Monte Carlo
  • Power Amplifier
  • TCAD

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Radiation
  • Condensed Matter Physics

Cite this

Millimeter-wave power amplifier circuit-device simulations through coupled Harmonic Balance-Monte Carlo particle-based device simulator. / Guerra, D.; Ferry, D. K.; Saraniti, Marco; Goodnick, Stephen.

IEEE MTT-S International Microwave Symposium Digest. 2012. 6258430.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Guerra, D, Ferry, DK, Saraniti, M & Goodnick, S 2012, Millimeter-wave power amplifier circuit-device simulations through coupled Harmonic Balance-Monte Carlo particle-based device simulator. in IEEE MTT-S International Microwave Symposium Digest., 6258430, 2012 IEEE MTT-S International Microwave Symposium, IMS 2012, Montreal, QC, Canada, 6/17/12. https://doi.org/10.1109/MWSYM.2012.6258430
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