Abstract

We describe the large-signal characterization of mm-wave FET power amplifiers with high-Q matching network performed through full band Monte Carlo particle-based device simulations self-consistently coupled with a Harmonic Balance frequency domain circuit solver. Such circuit-device simulations allow to include the effect of the matching network as well as parasitic elements in the large-signal characterization of mm-wave FETs.

Original languageEnglish (US)
Title of host publicationIEEE MTT-S International Microwave Symposium Digest
DOIs
Publication statusPublished - 2012
Event2012 IEEE MTT-S International Microwave Symposium, IMS 2012 - Montreal, QC, Canada
Duration: Jun 17 2012Jun 22 2012

Other

Other2012 IEEE MTT-S International Microwave Symposium, IMS 2012
CountryCanada
CityMontreal, QC
Period6/17/126/22/12

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Keywords

  • GaN HEMT
  • Harmonic Balance
  • Large-signal
  • Monte Carlo
  • Power Amplifier
  • TCAD

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Radiation
  • Condensed Matter Physics

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