Migration of dislocations in strained GaN heteroepitaxial layers

Suman Lata Sahonta, M. Q. Baines, D. Cherns, H. Amano, Fernando Ponce

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Transmission electron microscopy has been used to study the relaxation of misfit strains in GaN/Al0.28Ga0.72N layers grown on (0001) sapphire. It has been observed that threading edge-type dislocations migrate laterally in the top GaN layer to form misfit dislocations. This leads to reactions with other threading dislocations, to generate either closed loops or more complex nodes, which reduce the total threading dislocation density. The proportion of edge-type dislocations compared to screw-type and mixed dislocations is reduced with increasing GaN thickness. It is proposed that the lateral migration of the dislocations is predominantly by a climb rather than a glide mechanism.

Original languageEnglish (US)
Pages (from-to)952-955
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume234
Issue number3
DOIs
StatePublished - Dec 2002

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Aluminum Oxide
Dislocations (crystals)
Sapphire
Transmission electron microscopy
screws
proportion
sapphire
transmission electron microscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Migration of dislocations in strained GaN heteroepitaxial layers. / Sahonta, Suman Lata; Baines, M. Q.; Cherns, D.; Amano, H.; Ponce, Fernando.

In: Physica Status Solidi (B) Basic Research, Vol. 234, No. 3, 12.2002, p. 952-955.

Research output: Contribution to journalArticle

Sahonta, Suman Lata ; Baines, M. Q. ; Cherns, D. ; Amano, H. ; Ponce, Fernando. / Migration of dislocations in strained GaN heteroepitaxial layers. In: Physica Status Solidi (B) Basic Research. 2002 ; Vol. 234, No. 3. pp. 952-955.
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