Migration of dislocations in strained GaN heteroepitaxial layers

Suman Lata Sahonta; M. Q. Baines; D. Cherns; H. Amano; Fernando Ponce

doi:10.1002/1521-3951(200212)234:3<952::AID-PSSB952>3.0.CO;2-4

Migration of dislocations in strained GaN heteroepitaxial layers

Suman Lata Sahonta, M. Q. Baines, D. Cherns, H. Amano, Fernando Ponce

Physics

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Transmission electron microscopy has been used to study the relaxation of misfit strains in GaN/Al_0.28Ga_0.72N layers grown on (0001) sapphire. It has been observed that threading edge-type dislocations migrate laterally in the top GaN layer to form misfit dislocations. This leads to reactions with other threading dislocations, to generate either closed loops or more complex nodes, which reduce the total threading dislocation density. The proportion of edge-type dislocations compared to screw-type and mixed dislocations is reduced with increasing GaN thickness. It is proposed that the lateral migration of the dislocations is predominantly by a climb rather than a glide mechanism.

Original language	English (US)
Pages (from-to)	952-955
Number of pages	4
Journal	Physica Status Solidi (B) Basic Research
Volume	234
Issue number	3
DOIs	https://doi.org/10.1002/1521-3951(200212)234:3<952::AID-PSSB952>3.0.CO;2-4
State	Published - Dec 1 2002

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1002/1521-3951(200212)234:3<952::AID-PSSB952>3.0.CO;2-4

Cite this

@article{7347b1d3c0204612a7dfd93fc41bd707,

title = "Migration of dislocations in strained GaN heteroepitaxial layers",

abstract = "Transmission electron microscopy has been used to study the relaxation of misfit strains in GaN/Al0.28Ga0.72N layers grown on (0001) sapphire. It has been observed that threading edge-type dislocations migrate laterally in the top GaN layer to form misfit dislocations. This leads to reactions with other threading dislocations, to generate either closed loops or more complex nodes, which reduce the total threading dislocation density. The proportion of edge-type dislocations compared to screw-type and mixed dislocations is reduced with increasing GaN thickness. It is proposed that the lateral migration of the dislocations is predominantly by a climb rather than a glide mechanism.",

author = "Sahonta, {Suman Lata} and Baines, {M. Q.} and D. Cherns and H. Amano and Fernando Ponce",

year = "2002",

month = dec,

day = "1",

doi = "10.1002/1521-3951(200212)234:3<952::AID-PSSB952>3.0.CO;2-4",

language = "English (US)",

volume = "234",

pages = "952--955",

journal = "Physica Status Solidi (B): Basic Research",

issn = "0370-1972",

publisher = "Wiley-VCH Verlag",

number = "3",

}

TY - JOUR

T1 - Migration of dislocations in strained GaN heteroepitaxial layers

AU - Sahonta, Suman Lata

AU - Baines, M. Q.

AU - Cherns, D.

AU - Amano, H.

AU - Ponce, Fernando

PY - 2002/12/1

Y1 - 2002/12/1

N2 - Transmission electron microscopy has been used to study the relaxation of misfit strains in GaN/Al0.28Ga0.72N layers grown on (0001) sapphire. It has been observed that threading edge-type dislocations migrate laterally in the top GaN layer to form misfit dislocations. This leads to reactions with other threading dislocations, to generate either closed loops or more complex nodes, which reduce the total threading dislocation density. The proportion of edge-type dislocations compared to screw-type and mixed dislocations is reduced with increasing GaN thickness. It is proposed that the lateral migration of the dislocations is predominantly by a climb rather than a glide mechanism.

AB - Transmission electron microscopy has been used to study the relaxation of misfit strains in GaN/Al0.28Ga0.72N layers grown on (0001) sapphire. It has been observed that threading edge-type dislocations migrate laterally in the top GaN layer to form misfit dislocations. This leads to reactions with other threading dislocations, to generate either closed loops or more complex nodes, which reduce the total threading dislocation density. The proportion of edge-type dislocations compared to screw-type and mixed dislocations is reduced with increasing GaN thickness. It is proposed that the lateral migration of the dislocations is predominantly by a climb rather than a glide mechanism.

UR - http://www.scopus.com/inward/record.url?scp=0036920636&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036920636&partnerID=8YFLogxK

U2 - 10.1002/1521-3951(200212)234:3<952::AID-PSSB952>3.0.CO;2-4

DO - 10.1002/1521-3951(200212)234:3<952::AID-PSSB952>3.0.CO;2-4

M3 - Article

AN - SCOPUS:0036920636

SN - 0370-1972

VL - 234

SP - 952

EP - 955

JO - Physica Status Solidi (B): Basic Research

JF - Physica Status Solidi (B): Basic Research

IS - 3

ER -

Migration of dislocations in strained GaN heteroepitaxial layers

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this