Midwave infrared stimulated emission from a GaInSb/InAs superlattice

R. H. Miles; D. H. Chow; Y. H. Zhang; P. D. Brewer; R. G. Wilson

doi:10.1063/1.113277

Midwave infrared stimulated emission from a GaInSb/InAs superlattice

R. H. Miles, D. H. Chow, Y. H. Zhang, P. D. Brewer, R. G. Wilson

Research output: Contribution to journal › Article › peer-review

94 Scopus citations

Abstract

Use of a cracked Sb source and a postgrowth anneal procedure has been found to yield significant improvements in optical efficiencies of GaInSb/InAs superlattices grown by molecular beam epitaxy. Appreciable 5 μm band-to-band luminescence has been observed at room temperature, and stimulated emission at 3.2 μm has been demonstrated in an optically pumped structure. Intrinsic properties of this class of superlattices favor them for application as efficient infrared lasers operating at comparatively high temperatures.

Original language	English (US)
Pages (from-to)	1921
Number of pages	1
Journal	Applied Physics Letters
DOIs	https://doi.org/10.1063/1.113277
State	Published - 1995
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.113277

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abstract = "Use of a cracked Sb source and a postgrowth anneal procedure has been found to yield significant improvements in optical efficiencies of GaInSb/InAs superlattices grown by molecular beam epitaxy. Appreciable 5 μm band-to-band luminescence has been observed at room temperature, and stimulated emission at 3.2 μm has been demonstrated in an optically pumped structure. Intrinsic properties of this class of superlattices favor them for application as efficient infrared lasers operating at comparatively high temperatures.",

author = "Miles, {R. H.} and Chow, {D. H.} and Zhang, {Y. H.} and Brewer, {P. D.} and Wilson, {R. G.}",

year = "1995",

doi = "10.1063/1.113277",

language = "English (US)",

pages = "1921",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics Publising LLC",

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T1 - Midwave infrared stimulated emission from a GaInSb/InAs superlattice

AU - Miles, R. H.

AU - Chow, D. H.

AU - Zhang, Y. H.

AU - Brewer, P. D.

AU - Wilson, R. G.

PY - 1995

Y1 - 1995

N2 - Use of a cracked Sb source and a postgrowth anneal procedure has been found to yield significant improvements in optical efficiencies of GaInSb/InAs superlattices grown by molecular beam epitaxy. Appreciable 5 μm band-to-band luminescence has been observed at room temperature, and stimulated emission at 3.2 μm has been demonstrated in an optically pumped structure. Intrinsic properties of this class of superlattices favor them for application as efficient infrared lasers operating at comparatively high temperatures.

AB - Use of a cracked Sb source and a postgrowth anneal procedure has been found to yield significant improvements in optical efficiencies of GaInSb/InAs superlattices grown by molecular beam epitaxy. Appreciable 5 μm band-to-band luminescence has been observed at room temperature, and stimulated emission at 3.2 μm has been demonstrated in an optically pumped structure. Intrinsic properties of this class of superlattices favor them for application as efficient infrared lasers operating at comparatively high temperatures.

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JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Midwave infrared stimulated emission from a GaInSb/InAs superlattice

Abstract

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