Midwave infrared stimulated emission from a GaInSb/InAs superlattice

R. H. Miles, D. H. Chow, Yong-Hang Zhang, P. D. Brewer, R. G. Wilson

Research output: Contribution to journalArticle

90 Citations (Scopus)

Abstract

Proof that significant improvements in the optical quality of GaInSb/InAs superlattices grown by molecular beam epitaxy can be attained by using a cracked Sb source and postgrowth anneal methodology was presented. Application of improved growth methods led to the observation of efficient band-to-band luminescence in superlattices with mid- and long-wave infrared energy gaps, and the exhibition of stimulated emission in a structure with a 3.2 μm energy gap. It was observed further that the measured thresholds gave a preliminary typical temperature of 26-35 K and 17 K for 3 μm GaInAsSb and 4 μm InAsSb lasers, respectively.

Original languageEnglish (US)
Pages (from-to)1921-1923
Number of pages3
JournalApplied Physics Letters
Volume66
Issue number15
DOIs
StatePublished - Jan 1 1995
Externally publishedYes

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stimulated emission
superlattices
planetary waves
molecular beam epitaxy
methodology
luminescence
thresholds
lasers
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Midwave infrared stimulated emission from a GaInSb/InAs superlattice. / Miles, R. H.; Chow, D. H.; Zhang, Yong-Hang; Brewer, P. D.; Wilson, R. G.

In: Applied Physics Letters, Vol. 66, No. 15, 01.01.1995, p. 1921-1923.

Research output: Contribution to journalArticle

Miles, R. H. ; Chow, D. H. ; Zhang, Yong-Hang ; Brewer, P. D. ; Wilson, R. G. / Midwave infrared stimulated emission from a GaInSb/InAs superlattice. In: Applied Physics Letters. 1995 ; Vol. 66, No. 15. pp. 1921-1923.
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