Mid-wave infrared diode lasers based on GaInSb/InAs and InAs/AlSb superlattices

D. H. Chow, R. H. Miles, T. C. Hasenberg, A. R. Kost, Y. H. Zhang, H. L. Dunlap, L. West

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Abstract

We report the characterization of a set of broad-area semiconductor diode lasers with mid-wave infrared (3-5 μm) emission wavelengths. The active region of each laser structure is a 5- or 6-period multiple quantum well (MQW) with Ga0.75In0.25As0.22Sb0.78 barriers and type-II (broken-gap) Ga0.75In0.25Sb/InAs superlattice wells. The cladding layers of each laser structure are n- and p-type InAs/AlSb (24 Å /24 Å) superlattices grown lattice-matched to a GaSb substrate. By tailoring constituent layer thicknesses in the Ga 0.75In0.25Sb/InAs superlattice wells, laser emission wavelengths ranging from 3.28 μm (maximum operating temperature=170 K) to 3.90 μm (maximum operating temperature=84 K) are obtained.

Original languageEnglish (US)
Number of pages1
JournalApplied Physics Letters
Volume67
DOIs
StatePublished - Dec 1 1995
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Chow, D. H., Miles, R. H., Hasenberg, T. C., Kost, A. R., Zhang, Y. H., Dunlap, H. L., & West, L. (1995). Mid-wave infrared diode lasers based on GaInSb/InAs and InAs/AlSb superlattices. Applied Physics Letters, 67. https://doi.org/10.1063/1.115354