Mid-infrared (3-8 μ m) Ge1-ySny alloys (0.15 < y < 0.30): Synthesis, structural, and optical properties

Chi Xu, Patrick M. Wallace, Dhruve A. Ringwala, Shery L.Y. Chang, Christian D. Poweleit, John Kouvetakis, José Menéndez

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

Ge1-ySny alloys with compositions in the 0.15 < y < 0.30 range have been grown directly on Si substrates using a chemical vapor deposition approach that allows for growth temperatures as high as 290 °C. The films show structural properties that are consistent with results from earlier materials with much lower Sn concentrations. These include the lattice parameter and the Ge-Ge Raman frequency, which are found to depend linearly on composition. The simplicity of the structures, directly grown on Si, makes it possible to carry out detailed optical studies. Sharp absorption edges are found, reaching 8 μm near y = 0.3. The compositional dependence of edge energies shows a cubic deviation from the standard quadratic alloy expression. The cubic term may dramatically impact the ability of the alloys to cover the long-wavelength (8-12 μm) mid-IR atmospheric window.

Original languageEnglish (US)
Article number212104
JournalApplied Physics Letters
Volume114
Issue number21
DOIs
StatePublished - May 27 2019

    Fingerprint

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this