Microwave performance and structural characterization of MBE-grown AlGaN/GaN HEMTs on low dislocation density GaN substrates

Engineering & Materials Science

• Vapor phase epitaxy 100%
• Electron mobility 88%
• Molecular beam epitaxy 87%
• Epitaxial films 85%
• Heterojunctions 73%
• Atomic force microscopy 72%
• Hydrides 71%
• X ray diffraction analysis 71%
• High electron mobility transistors 65%
• Cutoff frequency 65%
• Electric breakdown 63%
• Surface morphology 63%
• Structural properties 61%
• Electric properties 60%
• Transmission electron microscopy 58%
• X rays 51%
• Microwaves 49%
• Substrates 39%
• Temperature 22%

Physics & Astronomy

• high electron mobility transistors 58%
• microwaves 38%
• characterization 31%
• vapor phase epitaxy 29%
• electron mobility 29%
• hydrides 28%
• electrical faults 27%
• radiant flux density 25%
• x rays 25%
• performance 24%
• molecular beam epitaxy 24%
• cut-off 23%
• atomic force microscopy 21%
• electrical properties 20%
• transmission electron microscopy 18%
• output 16%
• room temperature 15%

Chemical Compounds

• Electron Mobility 67%
• Microwave 45%
• Vapor Phase Epitaxy 44%
• Breakdown Voltage 42%
• Molecular Beam Epitaxy 40%
• Epitaxial Film 40%
• X-Ray Diffractometry 30%
• Hydride 23%
• Electrical Property 23%
• Atomic Force Microscopy 22%
• Transmission Electron Microscopy 18%
• X-Ray 17%
• Length 16%
• Ambient Reaction Temperature 15%
• Surface 9%