Microwave performance and structural characterization of MBE-grown AlGaN/GaN HEMTs on low dislocation density GaN substrates

D. F. Storm, D. S. Katzer, J. A. Roussos, J. A. Mittereder, R. Bass, S. C. Binari, Lin Zhou, David Smith, D. Hanser, E. A. Preble, K. R. Evans

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14 Scopus citations

Abstract

We report on the structural and electrical properties of AlGaN/GaN heterostructures grown by molecular beam epitaxy on low-dislocation-density, free standing GaN substrates grown by hydride vapor phase epitaxy. Structural characterization by atomic force microscopy, transmission electron microscopy, and X-ray diffractometry reveal a smooth surface morphology, coherent interfaces, an absence of dislocations generated in the epitaxial layers, and narrow X-ray peaks. Hall measurements indicate room temperature electron mobilities of 1750 cm2/V s at sheet densities of 1.1×1013 cm-2. High electron mobility transistors exhibit excellent electrical characteristics, including output power densities of 4.8 W/mm at 10 GHz, off-state breakdown voltages of up to 200 V, and extrinsic cut-off frequencies of 36 GHz on devices with 0.45-μm gate lengths.

Original languageEnglish (US)
Pages (from-to)340-345
Number of pages6
JournalJournal of Crystal Growth
Volume305
Issue number2 SPEC. ISS.
DOIs
Publication statusPublished - Jul 15 2007

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Keywords

  • A3. Hydride vapor phase epitaxy
  • A3. Molecular beam epitaxy
  • B1. Nitrides
  • B2. Semiconducting gallium compounds
  • B3. High electron mobility transistors

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Storm, D. F., Katzer, D. S., Roussos, J. A., Mittereder, J. A., Bass, R., Binari, S. C., ... Evans, K. R. (2007). Microwave performance and structural characterization of MBE-grown AlGaN/GaN HEMTs on low dislocation density GaN substrates. Journal of Crystal Growth, 305(2 SPEC. ISS.), 340-345. https://doi.org/10.1016/j.jcrysgro.2007.04.003