TY - JOUR
T1 - Microwave loss in the high-performance dielectric Ba(Zn 1/3Ta2/3)O3 at 4.2K
AU - Liu, Lingtao
AU - Flores, Marco
AU - Newman, Nathan
PY - 2012/12/18
Y1 - 2012/12/18
N2 - Temperature- and magnetic-field-dependent measurements of the loss tangent in Ba(Zn1/3Ta2/3)O3 doped with transition metals (Mn, Ni) are compared to those from samples doped with other impurities (Cd, Ga, Mg, and Zr). These results, combined with pulsed electron paramagnetic resonance measurements, show conclusively that microwave loss in transition-metal-doped Ba(Zn1/3Ta2/3)O3 at cryogenic temperatures is attributable to resonant spin excitations of unpaired transition-metal d electrons in isolated atoms (light doping) or exchange coupled clusters (moderate to high doping), a mechanism that differs from the usual suspects.
AB - Temperature- and magnetic-field-dependent measurements of the loss tangent in Ba(Zn1/3Ta2/3)O3 doped with transition metals (Mn, Ni) are compared to those from samples doped with other impurities (Cd, Ga, Mg, and Zr). These results, combined with pulsed electron paramagnetic resonance measurements, show conclusively that microwave loss in transition-metal-doped Ba(Zn1/3Ta2/3)O3 at cryogenic temperatures is attributable to resonant spin excitations of unpaired transition-metal d electrons in isolated atoms (light doping) or exchange coupled clusters (moderate to high doping), a mechanism that differs from the usual suspects.
UR - http://www.scopus.com/inward/record.url?scp=84871267206&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84871267206&partnerID=8YFLogxK
U2 - 10.1103/PhysRevLett.109.257601
DO - 10.1103/PhysRevLett.109.257601
M3 - Article
AN - SCOPUS:84871267206
SN - 0031-9007
VL - 109
JO - Physical Review Letters
JF - Physical Review Letters
IS - 25
M1 - 257601
ER -