Abstract

Temperature- and magnetic-field-dependent measurements of the loss tangent in Ba(Zn1/3Ta2/3)O3 doped with transition metals (Mn, Ni) are compared to those from samples doped with other impurities (Cd, Ga, Mg, and Zr). These results, combined with pulsed electron paramagnetic resonance measurements, show conclusively that microwave loss in transition-metal-doped Ba(Zn1/3Ta2/3)O3 at cryogenic temperatures is attributable to resonant spin excitations of unpaired transition-metal d electrons in isolated atoms (light doping) or exchange coupled clusters (moderate to high doping), a mechanism that differs from the usual suspects.

Original languageEnglish (US)
Article number257601
JournalPhysical Review Letters
Volume109
Issue number25
DOIs
StatePublished - Dec 18 2012

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transition metals
microwaves
cryogenic temperature
tangents
electron paramagnetic resonance
temperature distribution
impurities
magnetic fields
excitation
atoms
electrons

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Microwave loss in the high-performance dielectric Ba(Zn 1/3Ta2/3)O3 at 4.2K. / Liu, Lingtao; Flores, Marco; Newman, Nathan.

In: Physical Review Letters, Vol. 109, No. 25, 257601, 18.12.2012.

Research output: Contribution to journalArticle

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