Microwave hot electron effects in semiconductor quantized inversion layers

D. K. Ferry, P. Das

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Hot electron microwave conductivity of quantized inversion layers in semiconductor surfaces has been calculated based on a displaced Maxwellian approximation for the electron distribution function. The calculations performed take into account repopulation of carriers among the various subbands. The effects of the energy, momentum and intervalley population exchange rates due to scattering by acoustical and intervalley phonons are included in the derivations. The results are applied to silicon where the electron energy and momentum losses by intervalley phonons in both the zero-order coupled and first-order coupled cases are important. Numerical computations for the microwave conductivity of silicon are presented as a function of bias electric field and frequency. It is found that significant changes in the conductivity contribution for a fixed bias field occur at frequencies on the order of the intervalley repopulation rate. Though no experimental work in this frequency range has been performed, it should be easily observable.

Original languageEnglish (US)
Pages (from-to)355-359
Number of pages5
JournalSolid State Electronics
Volume20
Issue number4
DOIs
StatePublished - 1977
Externally publishedYes

Fingerprint

Inversion layers
Hot electrons
Silicon
Phonons
hot electrons
Momentum
Microwaves
inversions
Semiconductor materials
microwaves
conductivity
Electrons
phonons
Distribution functions
Electric fields
silicon
Scattering
electron distribution
derivation
energy dissipation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Microwave hot electron effects in semiconductor quantized inversion layers. / Ferry, D. K.; Das, P.

In: Solid State Electronics, Vol. 20, No. 4, 1977, p. 355-359.

Research output: Contribution to journalArticle

Ferry, D. K. ; Das, P. / Microwave hot electron effects in semiconductor quantized inversion layers. In: Solid State Electronics. 1977 ; Vol. 20, No. 4. pp. 355-359.
@article{0872d4e91f1d4f3a8c23c0ac9f5d8a95,
title = "Microwave hot electron effects in semiconductor quantized inversion layers",
abstract = "Hot electron microwave conductivity of quantized inversion layers in semiconductor surfaces has been calculated based on a displaced Maxwellian approximation for the electron distribution function. The calculations performed take into account repopulation of carriers among the various subbands. The effects of the energy, momentum and intervalley population exchange rates due to scattering by acoustical and intervalley phonons are included in the derivations. The results are applied to silicon where the electron energy and momentum losses by intervalley phonons in both the zero-order coupled and first-order coupled cases are important. Numerical computations for the microwave conductivity of silicon are presented as a function of bias electric field and frequency. It is found that significant changes in the conductivity contribution for a fixed bias field occur at frequencies on the order of the intervalley repopulation rate. Though no experimental work in this frequency range has been performed, it should be easily observable.",
author = "Ferry, {D. K.} and P. Das",
year = "1977",
doi = "10.1016/0038-1101(77)90121-6",
language = "English (US)",
volume = "20",
pages = "355--359",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Limited",
number = "4",

}

TY - JOUR

T1 - Microwave hot electron effects in semiconductor quantized inversion layers

AU - Ferry, D. K.

AU - Das, P.

PY - 1977

Y1 - 1977

N2 - Hot electron microwave conductivity of quantized inversion layers in semiconductor surfaces has been calculated based on a displaced Maxwellian approximation for the electron distribution function. The calculations performed take into account repopulation of carriers among the various subbands. The effects of the energy, momentum and intervalley population exchange rates due to scattering by acoustical and intervalley phonons are included in the derivations. The results are applied to silicon where the electron energy and momentum losses by intervalley phonons in both the zero-order coupled and first-order coupled cases are important. Numerical computations for the microwave conductivity of silicon are presented as a function of bias electric field and frequency. It is found that significant changes in the conductivity contribution for a fixed bias field occur at frequencies on the order of the intervalley repopulation rate. Though no experimental work in this frequency range has been performed, it should be easily observable.

AB - Hot electron microwave conductivity of quantized inversion layers in semiconductor surfaces has been calculated based on a displaced Maxwellian approximation for the electron distribution function. The calculations performed take into account repopulation of carriers among the various subbands. The effects of the energy, momentum and intervalley population exchange rates due to scattering by acoustical and intervalley phonons are included in the derivations. The results are applied to silicon where the electron energy and momentum losses by intervalley phonons in both the zero-order coupled and first-order coupled cases are important. Numerical computations for the microwave conductivity of silicon are presented as a function of bias electric field and frequency. It is found that significant changes in the conductivity contribution for a fixed bias field occur at frequencies on the order of the intervalley repopulation rate. Though no experimental work in this frequency range has been performed, it should be easily observable.

UR - http://www.scopus.com/inward/record.url?scp=0017482839&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0017482839&partnerID=8YFLogxK

U2 - 10.1016/0038-1101(77)90121-6

DO - 10.1016/0038-1101(77)90121-6

M3 - Article

AN - SCOPUS:0017482839

VL - 20

SP - 355

EP - 359

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 4

ER -