Microwave Generation in NERFET

A. Kastalsky; A. Kastalsky; R. A. Kiehl; S. Luryi; A. C. Gossard; R. Hendel

doi:10.1109/EDL.1984.25931

Microwave Generation in NERFET

A. Kastalsky, A. Kastalsky, R. A. Kiehl, S. Luryi, A. C. Gossard, R. Hendel

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

Microwave generation in a NEgative Resistance Field-Effect Transistor (NERFET) is reported for the first time. This device is based on a GaAs/AlGaAs heterostructure which exhibits negative differential resistance due to a transfer of hot-electrons out of a source-drain channel and into a conducting substrate. In an untuned microwave circuit at 77 K, the NERFET was found to generate wide-band noise at frequencies up to 2.3 GHz. In a tunable resonant circuit, stable microwave oscillations were observed at frequencies as high as 1.45 GHz. While further experiments are needed to determine the performance limits of the NERFET, the preliminary results presented here demonstrate the potential of this new device as a high-frequency element.

Original language	English (US)
Pages (from-to)	321-323
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	5
Issue number	8
DOIs	https://doi.org/10.1109/EDL.1984.25931
State	Published - Aug 1984
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/EDL.1984.25931

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title = "Microwave Generation in NERFET",

abstract = "Microwave generation in a NEgative Resistance Field-Effect Transistor (NERFET) is reported for the first time. This device is based on a GaAs/AlGaAs heterostructure which exhibits negative differential resistance due to a transfer of hot-electrons out of a source-drain channel and into a conducting substrate. In an untuned microwave circuit at 77 K, the NERFET was found to generate wide-band noise at frequencies up to 2.3 GHz. In a tunable resonant circuit, stable microwave oscillations were observed at frequencies as high as 1.45 GHz. While further experiments are needed to determine the performance limits of the NERFET, the preliminary results presented here demonstrate the potential of this new device as a high-frequency element.",

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AU - Kastalsky, A.

AU - Kiehl, R. A.

AU - Luryi, S.

AU - Gossard, A. C.

AU - Hendel, R.

PY - 1984/8

Y1 - 1984/8

N2 - Microwave generation in a NEgative Resistance Field-Effect Transistor (NERFET) is reported for the first time. This device is based on a GaAs/AlGaAs heterostructure which exhibits negative differential resistance due to a transfer of hot-electrons out of a source-drain channel and into a conducting substrate. In an untuned microwave circuit at 77 K, the NERFET was found to generate wide-band noise at frequencies up to 2.3 GHz. In a tunable resonant circuit, stable microwave oscillations were observed at frequencies as high as 1.45 GHz. While further experiments are needed to determine the performance limits of the NERFET, the preliminary results presented here demonstrate the potential of this new device as a high-frequency element.

AB - Microwave generation in a NEgative Resistance Field-Effect Transistor (NERFET) is reported for the first time. This device is based on a GaAs/AlGaAs heterostructure which exhibits negative differential resistance due to a transfer of hot-electrons out of a source-drain channel and into a conducting substrate. In an untuned microwave circuit at 77 K, the NERFET was found to generate wide-band noise at frequencies up to 2.3 GHz. In a tunable resonant circuit, stable microwave oscillations were observed at frequencies as high as 1.45 GHz. While further experiments are needed to determine the performance limits of the NERFET, the preliminary results presented here demonstrate the potential of this new device as a high-frequency element.

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Microwave Generation in NERFET

Abstract

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