Microwave enhanced ion-cut silicon layer transfer

D. C. Thompson, Terry Alford, J. W. Mayer, T. Höchbauer, J. K. Lee, M. Nastasi, S. S. Lau, N. David Theodore, Paul K. Chu

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Abstract

Microwave heating has been used to decrease the time required for exfoliation of thin single-crystalline silicon layers onto insulator substrates using ion-cut processing. Samples exfoliated in a 2.45 GHz, 1300 W cavity applicator microwave system saw a decrease in incubation times as compared to conventional anneal processes. Rutherford backscattering spectrometry, cross sectional scanning electron microscopy, cross sectional transmission electron microscopy, and selective aperture electron diffraction were used to determine the transferred layer thickness and crystalline quality. The surface quality was determined by atomic force microscopy. Hall measurements were used to determine electrical properties as a function of radiation repair anneal times. Results of physical and electrical characterizations demonstrate that the end products of microwave enhanced ion-cut processing do not appreciably differ from those using more traditional means of exfoliation.

Original languageEnglish (US)
Article number114915
JournalJournal of Applied Physics
Volume101
Issue number11
DOIs
StatePublished - Jun 22 2007

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Thompson, D. C., Alford, T., Mayer, J. W., Höchbauer, T., Lee, J. K., Nastasi, M., Lau, S. S., Theodore, N. D., & Chu, P. K. (2007). Microwave enhanced ion-cut silicon layer transfer. Journal of Applied Physics, 101(11), [114915]. https://doi.org/10.1063/1.2737387