11 Citations (Scopus)

Abstract

Microwave heating is used to initiate exfoliation of silicon layers in conjunction with the ion-cut process for transfer of silicon layers onto insulator or heterogeneous layered substrates. Samples were processed inside a 2.45 GHz, 1300 W cavity applicator microwave system for time durations as low as 12 s. This is a significant decrease in exfoliation incubation times. Sample temperatures measured by pyrometry were within previous published ranges. Rutherford backscattering spectrometry and cross-sectional transmission electron microscopy were used to determine layer thickness and crystallinity. Surface quality was measured by using atomic force microscopy. Hall measurements were used to characterize electrical properties as a function of postcut anneal time and temperature.

Original languageEnglish (US)
Article number224103
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number22
DOIs
StatePublished - 2005

Fingerprint

microwaves
silicon
temperature measurement
crystallinity
backscattering
electrical properties
insulators
atomic force microscopy
transmission electron microscopy
cavities
heating
temperature
spectroscopy
ions

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Thompson, D. C., Alford, T., Mayer, J. W., Hochbauer, T., Nastasi, M., Lau, S. S., ... Chu, P. K. (2005). Microwave-cut silicon layer transfer. Applied Physics Letters, 87(22), 1-3. [224103]. https://doi.org/10.1063/1.2135395

Microwave-cut silicon layer transfer. / Thompson, D. C.; Alford, Terry; Mayer, J. W.; Hochbauer, T.; Nastasi, M.; Lau, S. S.; Theodore, N. David; Henttinen, K.; Suni, Llkka; Chu, Paul K.

In: Applied Physics Letters, Vol. 87, No. 22, 224103, 2005, p. 1-3.

Research output: Contribution to journalArticle

Thompson, DC, Alford, T, Mayer, JW, Hochbauer, T, Nastasi, M, Lau, SS, Theodore, ND, Henttinen, K, Suni, L & Chu, PK 2005, 'Microwave-cut silicon layer transfer', Applied Physics Letters, vol. 87, no. 22, 224103, pp. 1-3. https://doi.org/10.1063/1.2135395
Thompson DC, Alford T, Mayer JW, Hochbauer T, Nastasi M, Lau SS et al. Microwave-cut silicon layer transfer. Applied Physics Letters. 2005;87(22):1-3. 224103. https://doi.org/10.1063/1.2135395
Thompson, D. C. ; Alford, Terry ; Mayer, J. W. ; Hochbauer, T. ; Nastasi, M. ; Lau, S. S. ; Theodore, N. David ; Henttinen, K. ; Suni, Llkka ; Chu, Paul K. / Microwave-cut silicon layer transfer. In: Applied Physics Letters. 2005 ; Vol. 87, No. 22. pp. 1-3.
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