Microwave-cut silicon layer transfer

D. C. Thompson; Terry Alford; J. W. Mayer; T. Hochbauer; M. Nastasi; S. S. Lau; N. David Theodore; K. Henttinen; Llkka Suni; Paul K. Chu

doi:10.1063/1.2135395

Microwave-cut silicon layer transfer

D. C. Thompson, Terry Alford, J. W. Mayer, T. Hochbauer, M. Nastasi, S. S. Lau, N. David Theodore, K. Henttinen, Llkka Suni, Paul K. Chu

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12 Scopus citations

Abstract

Microwave heating is used to initiate exfoliation of silicon layers in conjunction with the ion-cut process for transfer of silicon layers onto insulator or heterogeneous layered substrates. Samples were processed inside a 2.45 GHz, 1300 W cavity applicator microwave system for time durations as low as 12 s. This is a significant decrease in exfoliation incubation times. Sample temperatures measured by pyrometry were within previous published ranges. Rutherford backscattering spectrometry and cross-sectional transmission electron microscopy were used to determine layer thickness and crystallinity. Surface quality was measured by using atomic force microscopy. Hall measurements were used to characterize electrical properties as a function of postcut anneal time and temperature.

Original language	English (US)
Article number	224103
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	22
DOIs	https://doi.org/10.1063/1.2135395
State	Published - 2005

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2135395

Cite this

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title = "Microwave-cut silicon layer transfer",

abstract = "Microwave heating is used to initiate exfoliation of silicon layers in conjunction with the ion-cut process for transfer of silicon layers onto insulator or heterogeneous layered substrates. Samples were processed inside a 2.45 GHz, 1300 W cavity applicator microwave system for time durations as low as 12 s. This is a significant decrease in exfoliation incubation times. Sample temperatures measured by pyrometry were within previous published ranges. Rutherford backscattering spectrometry and cross-sectional transmission electron microscopy were used to determine layer thickness and crystallinity. Surface quality was measured by using atomic force microscopy. Hall measurements were used to characterize electrical properties as a function of postcut anneal time and temperature.",

author = "Thompson, {D. C.} and Terry Alford and Mayer, {J. W.} and T. Hochbauer and M. Nastasi and Lau, {S. S.} and Theodore, {N. David} and K. Henttinen and Llkka Suni and Chu, {Paul K.}",

note = "Funding Information: This work was partially supported by a grant from the NSF (DMR-0308127, L. Hess), and a Strategic Research Grant from City University of Hong Kong (SRG No. 7001820). The work at Los Alamos National Laboratory was supported by the DOE Office of Basic Energy Sciences.",

year = "2005",

doi = "10.1063/1.2135395",

language = "English (US)",

volume = "87",

pages = "1--3",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - Microwave-cut silicon layer transfer

AU - Thompson, D. C.

AU - Alford, Terry

AU - Mayer, J. W.

AU - Hochbauer, T.

AU - Nastasi, M.

AU - Lau, S. S.

AU - Theodore, N. David

AU - Henttinen, K.

AU - Suni, Llkka

AU - Chu, Paul K.

N1 - Funding Information: This work was partially supported by a grant from the NSF (DMR-0308127, L. Hess), and a Strategic Research Grant from City University of Hong Kong (SRG No. 7001820). The work at Los Alamos National Laboratory was supported by the DOE Office of Basic Energy Sciences.

PY - 2005

Y1 - 2005

N2 - Microwave heating is used to initiate exfoliation of silicon layers in conjunction with the ion-cut process for transfer of silicon layers onto insulator or heterogeneous layered substrates. Samples were processed inside a 2.45 GHz, 1300 W cavity applicator microwave system for time durations as low as 12 s. This is a significant decrease in exfoliation incubation times. Sample temperatures measured by pyrometry were within previous published ranges. Rutherford backscattering spectrometry and cross-sectional transmission electron microscopy were used to determine layer thickness and crystallinity. Surface quality was measured by using atomic force microscopy. Hall measurements were used to characterize electrical properties as a function of postcut anneal time and temperature.

AB - Microwave heating is used to initiate exfoliation of silicon layers in conjunction with the ion-cut process for transfer of silicon layers onto insulator or heterogeneous layered substrates. Samples were processed inside a 2.45 GHz, 1300 W cavity applicator microwave system for time durations as low as 12 s. This is a significant decrease in exfoliation incubation times. Sample temperatures measured by pyrometry were within previous published ranges. Rutherford backscattering spectrometry and cross-sectional transmission electron microscopy were used to determine layer thickness and crystallinity. Surface quality was measured by using atomic force microscopy. Hall measurements were used to characterize electrical properties as a function of postcut anneal time and temperature.

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JF - Applied Physics Letters

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ER -

Microwave-cut silicon layer transfer

Abstract

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