Microwave-cut silicon layer transfer

D. C. Thompson, Terry Alford, J. W. Mayer, T. Hochbauer, M. Nastasi, S. S. Lau, N. David Theodore, K. Henttinen, Llkka Suni, Paul K. Chu

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

Microwave heating is used to initiate exfoliation of silicon layers in conjunction with the ion-cut process for transfer of silicon layers onto insulator or heterogeneous layered substrates. Samples were processed inside a 2.45 GHz, 1300 W cavity applicator microwave system for time durations as low as 12 s. This is a significant decrease in exfoliation incubation times. Sample temperatures measured by pyrometry were within previous published ranges. Rutherford backscattering spectrometry and cross-sectional transmission electron microscopy were used to determine layer thickness and crystallinity. Surface quality was measured by using atomic force microscopy. Hall measurements were used to characterize electrical properties as a function of postcut anneal time and temperature.

Original languageEnglish (US)
Article number224103
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number22
DOIs
StatePublished - 2005

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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