Abstract

Copper (I) oxide (Cu 2O) forms an encapsulation layer after annealing Ag-17 at Cu alloy thin films inside a microwave cavity. The maximum temperature reached during this process is 70 °C which makes microwaves an efficient low temperature processing tool for flexible electronics. Rutherford backscattering spectrometry is used to study the encapsulation of Ag films by copper oxide. X-ray diffraction shows preferential orientation along the [111] direction for both Ag and Cu 2O. Four point probe measurements suggest that the resistivity is controlled by the residual Cu present in the alloy films.

Original languageEnglish (US)
Pages (from-to)163-165
Number of pages3
JournalMaterials Letters
Volume89
DOIs
StatePublished - Dec 15 2012

Keywords

  • Electrical properties
  • Oxidation
  • Segregation
  • Thin films

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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