Abstract

Herein the synthesis of Cu3Ge films by exposing Cu-Ge alloy films to microwave radiation is reported. It is shown that microwave radiation led to the formation of copper germanide at temperatures ca. 80 °C. The electrical properties of the Cu3Ge films are presented and compared for various annealing times. X-ray diffraction shows that the Cu3Ge films formed after microwave annealing is crystalline in the orthorhombic phase. Rutherford backscattering and X-ray photoelectron spectroscopy confirms the formation of copper oxide encapsulation layer. Despite the slight oxidation of Cu during the microwave anneal the lowest resistivity of Cu3Ge films obtained is 14 μΩ-cm.

Original languageEnglish (US)
Article number094104
JournalApplied Physics Letters
Volume103
Issue number9
DOIs
StatePublished - Aug 26 2013

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microwaves
copper
thin films
annealing
copper oxides
backscattering
x rays
electrical properties
photoelectron spectroscopy
oxidation
electrical resistivity
synthesis
diffraction
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Microwave assisted growth of copper germanide thin films at very low temperatures. / Das, Sayantan; Alford, Terry.

In: Applied Physics Letters, Vol. 103, No. 9, 094104, 26.08.2013.

Research output: Contribution to journalArticle

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AB - Herein the synthesis of Cu3Ge films by exposing Cu-Ge alloy films to microwave radiation is reported. It is shown that microwave radiation led to the formation of copper germanide at temperatures ca. 80 °C. The electrical properties of the Cu3Ge films are presented and compared for various annealing times. X-ray diffraction shows that the Cu3Ge films formed after microwave annealing is crystalline in the orthorhombic phase. Rutherford backscattering and X-ray photoelectron spectroscopy confirms the formation of copper oxide encapsulation layer. Despite the slight oxidation of Cu during the microwave anneal the lowest resistivity of Cu3Ge films obtained is 14 μΩ-cm.

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