Microwave assisted growth of copper germanide thin films at very low temperatures

Sayantan Das; Terry Alford

doi:10.1063/1.4820253

Microwave assisted growth of copper germanide thin films at very low temperatures

Sayantan Das, Terry Alford

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Herein the synthesis of Cu₃Ge films by exposing Cu-Ge alloy films to microwave radiation is reported. It is shown that microwave radiation led to the formation of copper germanide at temperatures ca. 80 °C. The electrical properties of the Cu₃Ge films are presented and compared for various annealing times. X-ray diffraction shows that the Cu₃Ge films formed after microwave annealing is crystalline in the orthorhombic phase. Rutherford backscattering and X-ray photoelectron spectroscopy confirms the formation of copper oxide encapsulation layer. Despite the slight oxidation of Cu during the microwave anneal the lowest resistivity of Cu₃Ge films obtained is 14 μΩ-cm.

Original language	English (US)
Article number	094104
Journal	Applied Physics Letters
Volume	103
Issue number	9
DOIs	https://doi.org/10.1063/1.4820253
State	Published - Aug 26 2013

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4820253

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@article{2982f4191779475ea0c33d964971b924,

title = "Microwave assisted growth of copper germanide thin films at very low temperatures",

abstract = "Herein the synthesis of Cu3Ge films by exposing Cu-Ge alloy films to microwave radiation is reported. It is shown that microwave radiation led to the formation of copper germanide at temperatures ca. 80 °C. The electrical properties of the Cu3Ge films are presented and compared for various annealing times. X-ray diffraction shows that the Cu3Ge films formed after microwave annealing is crystalline in the orthorhombic phase. Rutherford backscattering and X-ray photoelectron spectroscopy confirms the formation of copper oxide encapsulation layer. Despite the slight oxidation of Cu during the microwave anneal the lowest resistivity of Cu3Ge films obtained is 14 μΩ-cm.",

author = "Sayantan Das and Terry Alford",

note = "Funding Information: This work was partially supported by National Science Foundation (C. Ying, Grant No. DMR-0902277) to whom the authors are greatly indebted.",

year = "2013",

month = aug,

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doi = "10.1063/1.4820253",

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journal = "Applied Physics Letters",

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T1 - Microwave assisted growth of copper germanide thin films at very low temperatures

AU - Das, Sayantan

AU - Alford, Terry

N1 - Funding Information: This work was partially supported by National Science Foundation (C. Ying, Grant No. DMR-0902277) to whom the authors are greatly indebted.

PY - 2013/8/26

Y1 - 2013/8/26

N2 - Herein the synthesis of Cu3Ge films by exposing Cu-Ge alloy films to microwave radiation is reported. It is shown that microwave radiation led to the formation of copper germanide at temperatures ca. 80 °C. The electrical properties of the Cu3Ge films are presented and compared for various annealing times. X-ray diffraction shows that the Cu3Ge films formed after microwave annealing is crystalline in the orthorhombic phase. Rutherford backscattering and X-ray photoelectron spectroscopy confirms the formation of copper oxide encapsulation layer. Despite the slight oxidation of Cu during the microwave anneal the lowest resistivity of Cu3Ge films obtained is 14 μΩ-cm.

AB - Herein the synthesis of Cu3Ge films by exposing Cu-Ge alloy films to microwave radiation is reported. It is shown that microwave radiation led to the formation of copper germanide at temperatures ca. 80 °C. The electrical properties of the Cu3Ge films are presented and compared for various annealing times. X-ray diffraction shows that the Cu3Ge films formed after microwave annealing is crystalline in the orthorhombic phase. Rutherford backscattering and X-ray photoelectron spectroscopy confirms the formation of copper oxide encapsulation layer. Despite the slight oxidation of Cu during the microwave anneal the lowest resistivity of Cu3Ge films obtained is 14 μΩ-cm.

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Microwave assisted growth of copper germanide thin films at very low temperatures

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