Microwave activation of exfoliation in ion-cut silicon layer transfer

D. C. Thompson, Terry Alford, J. W. Mayer, T. Hochbauer, J. K. Lee, M. Nastasi, N. David Theodore

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Microwave heating is used to initiate the ion-cut process for transfer of coherent silicon-layers onto insulator substrates. Hydrogen and boron co-implanted silicon was bonded to an insulative substrate before processing inside a 2.45 GHz, 1300 W cavity applicator microwave system. Sample temperatures were measured using an optical pyrometer. Physical characterization demonstrates high crystallinity in transferred layers. Thicknesses of the transferred layers are comparable to previous ion-cut exfoliation techniques. Surface quality compares well with previous ion-cut studies. Electrical characterization demonstrates that the mobility and carrier density of microwave activated ion - cut silicon on insulator processed samples compares well with previous annealing techniques.

Original languageEnglish (US)
Title of host publicationSemiconductor Defect Engineering - Materials, Synthetic Structures and Devices II
PublisherMaterials Research Society
Pages137-142
Number of pages6
ISBN (Print)9781558999541
DOIs
StatePublished - 2007
EventSemiconductor Defect Engineering - Materials, Synthetic Structures and Devices II - San Francisco, CA, United States
Duration: Apr 9 2007Apr 13 2007

Publication series

NameMaterials Research Society Symposium Proceedings
Volume994
ISSN (Print)0272-9172

Other

OtherSemiconductor Defect Engineering - Materials, Synthetic Structures and Devices II
Country/TerritoryUnited States
CitySan Francisco, CA
Period4/9/074/13/07

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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