Microwave activation of exfoliation in ion-cut silicon layer transfer

D. C. Thompson, Terry Alford, J. W. Mayer, T. Hochbauer, J. K. Lee, M. Nastasi, N. David Theodore

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Microwave heating is used to initiate the ion-cut process for transfer of coherent silicon-layers onto insulator substrates. Hydrogen and boron co-implanted silicon was bonded to an insulative substrate before processing inside a 2.45 GHz, 1300 W cavity applicator microwave system. Sample temperatures were measured using an optical pyrometer. Physical characterization demonstrates high crystallinity in transferred layers. Thicknesses of the transferred layers are comparable to previous ion-cut exfoliation techniques. Surface quality compares well with previous ion-cut studies. Electrical characterization demonstrates that the mobility and carrier density of microwave activated ion - cut silicon on insulator processed samples compares well with previous annealing techniques.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
Pages137-142
Number of pages6
Volume994
StatePublished - 2007
EventSemiconductor Defect Engineering - Materials, Synthetic Structures and Devices II - San Francisco, CA, United States
Duration: Apr 9 2007Apr 13 2007

Other

OtherSemiconductor Defect Engineering - Materials, Synthetic Structures and Devices II
CountryUnited States
CitySan Francisco, CA
Period4/9/074/13/07

Fingerprint

Silicon
Chemical activation
Microwaves
Ions
Pyrometers
Applicators
Boron
Microwave heating
Substrates
Surface properties
Carrier concentration
Hydrogen
Annealing
Processing
Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Thompson, D. C., Alford, T., Mayer, J. W., Hochbauer, T., Lee, J. K., Nastasi, M., & David Theodore, N. (2007). Microwave activation of exfoliation in ion-cut silicon layer transfer. In Materials Research Society Symposium Proceedings (Vol. 994, pp. 137-142)

Microwave activation of exfoliation in ion-cut silicon layer transfer. / Thompson, D. C.; Alford, Terry; Mayer, J. W.; Hochbauer, T.; Lee, J. K.; Nastasi, M.; David Theodore, N.

Materials Research Society Symposium Proceedings. Vol. 994 2007. p. 137-142.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Thompson, DC, Alford, T, Mayer, JW, Hochbauer, T, Lee, JK, Nastasi, M & David Theodore, N 2007, Microwave activation of exfoliation in ion-cut silicon layer transfer. in Materials Research Society Symposium Proceedings. vol. 994, pp. 137-142, Semiconductor Defect Engineering - Materials, Synthetic Structures and Devices II, San Francisco, CA, United States, 4/9/07.
Thompson DC, Alford T, Mayer JW, Hochbauer T, Lee JK, Nastasi M et al. Microwave activation of exfoliation in ion-cut silicon layer transfer. In Materials Research Society Symposium Proceedings. Vol. 994. 2007. p. 137-142
Thompson, D. C. ; Alford, Terry ; Mayer, J. W. ; Hochbauer, T. ; Lee, J. K. ; Nastasi, M. ; David Theodore, N. / Microwave activation of exfoliation in ion-cut silicon layer transfer. Materials Research Society Symposium Proceedings. Vol. 994 2007. pp. 137-142
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