@inproceedings{70512d0876ca43949d0b03dbf24fba79,
title = "Microwave activation of exfoliation in ion-cut silicon layer transfer",
abstract = "Microwave heating is used to initiate the ion-cut process for transfer of coherent silicon-layers onto insulator substrates. Hydrogen and boron co-implanted silicon was bonded to an insulative substrate before processing inside a 2.45 GHz, 1300 W cavity applicator microwave system. Sample temperatures were measured using an optical pyrometer. Physical characterization demonstrates high crystallinity in transferred layers. Thicknesses of the transferred layers are comparable to previous ion-cut exfoliation techniques. Surface quality compares well with previous ion-cut studies. Electrical characterization demonstrates that the mobility and carrier density of microwave activated ion - cut silicon on insulator processed samples compares well with previous annealing techniques.",
author = "Thompson, {D. C.} and Terry Alford and Mayer, {J. W.} and T. Hochbauer and Lee, {J. K.} and M. Nastasi and {David Theodore}, N.",
year = "2007",
doi = "10.1557/proc-0994-f11-07",
language = "English (US)",
isbn = "9781558999541",
series = "Materials Research Society Symposium Proceedings",
publisher = "Materials Research Society",
pages = "137--142",
booktitle = "Semiconductor Defect Engineering - Materials, Synthetic Structures and Devices II",
note = "Semiconductor Defect Engineering - Materials, Synthetic Structures and Devices II ; Conference date: 09-04-2007 Through 13-04-2007",
}