1 Citation (Scopus)

Abstract

Microwave heating is used to activate solid phase epitaxial re-growth of amorphous silicon layers on single crystal silicon substrates. Layers of single crystal silicon were made amorphous through ion implantation with varying doses of boron or arsenic. Microwave processing occurred inside a 2.45 GHz, 1300 W cavity applicator microwave system for timedurations of 1-120 minutes. Sample temperatures were monitored using optical pyrometery. Rutherford backscattering spectrometry, and cross-sectional transmission electron microscopy were used to monitor crystalline quality in as-implanted and annealed samples. Sheet resistance readings show dopant activation occurring in both boron and arsenic implanted samples. In samples with large doses of arsenic, the defects resulting from vacancies and/or micro cluster precipitates are seen in transmission electron micrographs. Materials properties are used to explain microwave heating of silicon and demonstrate that the damage created in the implantation process serves to enhance microwave absorption.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
Pages145-150
Number of pages6
Volume989
StatePublished - 2007
Event2007 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 9 2007Apr 13 2007

Other

Other2007 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/9/074/13/07

Fingerprint

Arsenic
Silicon
Epitaxial growth
Boron
Microwave heating
Chemical activation
Microwaves
Doping (additives)
Single crystals
Applicators
Sheet resistance
Rutherford backscattering spectroscopy
Amorphous silicon
Ion implantation
Spectrometry
Dosimetry
Vacancies
Precipitates
Materials properties
Crystalline materials

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Thompson, D. C., Decker, J., Alford, T., Mayer, J. W., & Theodore, N. D. (2007). Microwave activation of dopants & solid phase epitaxy in silicon. In Materials Research Society Symposium Proceedings (Vol. 989, pp. 145-150)

Microwave activation of dopants & solid phase epitaxy in silicon. / Thompson, D. C.; Decker, J.; Alford, Terry; Mayer, J. W.; Theodore, N. David.

Materials Research Society Symposium Proceedings. Vol. 989 2007. p. 145-150.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Thompson, DC, Decker, J, Alford, T, Mayer, JW & Theodore, ND 2007, Microwave activation of dopants & solid phase epitaxy in silicon. in Materials Research Society Symposium Proceedings. vol. 989, pp. 145-150, 2007 MRS Spring Meeting, San Francisco, CA, United States, 4/9/07.
Thompson DC, Decker J, Alford T, Mayer JW, Theodore ND. Microwave activation of dopants & solid phase epitaxy in silicon. In Materials Research Society Symposium Proceedings. Vol. 989. 2007. p. 145-150
Thompson, D. C. ; Decker, J. ; Alford, Terry ; Mayer, J. W. ; Theodore, N. David. / Microwave activation of dopants & solid phase epitaxy in silicon. Materials Research Society Symposium Proceedings. Vol. 989 2007. pp. 145-150
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