Microstructure of relaxed InN quantum dots grown on GaN buffer layers by molecular-beam epitaxy

Lin Zhou, Tao Xu, David Smith, T. D. Moustakas

Research output: Contribution to journalArticle

17 Scopus citations

Abstract

Electron microscopy has been used to characterize the microstructure of InN quantum dots (QDs) grown by molecular-beam epitaxy on GaN(0001)/AlN(0001)/ sapphire substrates at 425 °C under slightly group III-rich conditions. Observations in plan-view and cross-section geometries established that the large majority of the InN QDs were invariably associated with threading dislocations in the underlying GaN buffer layer having edge components. Periodic, primarily hexagonal, arrays of misfit dislocations separated by ∼2.8 nm were observed at the InN QD/GaN interface, indicating that the QDs were almost completely relaxed. No evidence for an InN wetting layer was obtained either in situ by reflection high-energy electron diffraction or ex situ by transmission electron microscopy.

Original languageEnglish (US)
Article number231906
JournalApplied Physics Letters
Volume88
Issue number23
DOIs
StatePublished - Jun 5 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Microstructure of relaxed InN quantum dots grown on GaN buffer layers by molecular-beam epitaxy'. Together they form a unique fingerprint.

  • Cite this