Microstructure of InxGa1-xN thick epitaxial layers

L. Geng; S. Srinivasan; R. Liu; B. Jiang; H. Omiya; Fernando Ponce; S. Tanaka; Y. Nakagawa

doi:10.1109/ISCS.2003.1239879

Microstructure of In_xGa_1-xN thick epitaxial layers

L. Geng, S. Srinivasan, R. Liu, B. Jiang, H. Omiya, Fernando Ponce, S. Tanaka, Y. Nakagawa

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

0.μm thick In_xGa_1-xN epitaxial layers were grown by metal organic chemical vapor deposition on undoped GaN. GaN layers were ∼2.7μm thick and were grown on c-plane sapphire using low-temperature GaN buffer layers. Convergent-beam electron diffraction (CBED) was used to observe the local strain and dislocation density. The indium concentration of the In_xGa_1-xN was measured by Rutherford backscattering spectrometry (RBS). Using scanning electron microscopy and transmission electron microscopy In_xGa_1-xN layers cathodoluminescence spectra were studied.

Original language	English (US)
Title of host publication	2003 International Symposium on Compound Semiconductors, ISCS 2003
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	8-9
Number of pages	2
ISBN (Electronic)	0780378202
DOIs	https://doi.org/10.1109/ISCS.2003.1239879
State	Published - 2003
Event	2003 International Symposium on Compound Semiconductors, ISCS 2003 - San Diego, United States Duration: Aug 25 2003 → Aug 27 2003

Publication series

Name	IEEE International Symposium on Compound Semiconductors, Proceedings
Volume	2003-January

Other

Other	2003 International Symposium on Compound Semiconductors, ISCS 2003
Country/Territory	United States
City	San Diego
Period	8/25/03 → 8/27/03

Keywords

Buffer layers
Capacitive sensors
Chemical vapor deposition
Diffraction
Epitaxial layers
Gallium nitride
Microstructure
Organic chemicals
Scanning electron microscopy
Transmission electron microscopy

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ISCS.2003.1239879

Cite this

Geng, L., Srinivasan, S., Liu, R., Jiang, B., Omiya, H., Ponce, F., Tanaka, S., & Nakagawa, Y. (2003). Microstructure of In_xGa_1-xN thick epitaxial layers. In 2003 International Symposium on Compound Semiconductors, ISCS 2003 (pp. 8-9). Article 1239879 (IEEE International Symposium on Compound Semiconductors, Proceedings; Vol. 2003-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCS.2003.1239879

Microstructure of In_xGa_1-xN thick epitaxial layers. / Geng, L.; Srinivasan, S.; Liu, R. et al.
2003 International Symposium on Compound Semiconductors, ISCS 2003. Institute of Electrical and Electronics Engineers Inc., 2003. p. 8-9 1239879 (IEEE International Symposium on Compound Semiconductors, Proceedings; Vol. 2003-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Geng, L, Srinivasan, S, Liu, R, Jiang, B, Omiya, H, Ponce, F, Tanaka, S & Nakagawa, Y 2003, Microstructure of In_xGa_1-xN thick epitaxial layers. in 2003 International Symposium on Compound Semiconductors, ISCS 2003., 1239879, IEEE International Symposium on Compound Semiconductors, Proceedings, vol. 2003-January, Institute of Electrical and Electronics Engineers Inc., pp. 8-9, 2003 International Symposium on Compound Semiconductors, ISCS 2003, San Diego, United States, 8/25/03. https://doi.org/10.1109/ISCS.2003.1239879

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abstract = "0.μm thick InxGa1-xN epitaxial layers were grown by metal organic chemical vapor deposition on undoped GaN. GaN layers were ∼2.7μm thick and were grown on c-plane sapphire using low-temperature GaN buffer layers. Convergent-beam electron diffraction (CBED) was used to observe the local strain and dislocation density. The indium concentration of the InxGa1-xN was measured by Rutherford backscattering spectrometry (RBS). Using scanning electron microscopy and transmission electron microscopy InxGa1-xN layers cathodoluminescence spectra were studied.",

keywords = "Buffer layers, Capacitive sensors, Chemical vapor deposition, Diffraction, Epitaxial layers, Gallium nitride, Microstructure, Organic chemicals, Scanning electron microscopy, Transmission electron microscopy",

author = "L. Geng and S. Srinivasan and R. Liu and B. Jiang and H. Omiya and Fernando Ponce and S. Tanaka and Y. Nakagawa",

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AU - Ponce, Fernando

AU - Tanaka, S.

AU - Nakagawa, Y.

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N2 - 0.μm thick InxGa1-xN epitaxial layers were grown by metal organic chemical vapor deposition on undoped GaN. GaN layers were ∼2.7μm thick and were grown on c-plane sapphire using low-temperature GaN buffer layers. Convergent-beam electron diffraction (CBED) was used to observe the local strain and dislocation density. The indium concentration of the InxGa1-xN was measured by Rutherford backscattering spectrometry (RBS). Using scanning electron microscopy and transmission electron microscopy InxGa1-xN layers cathodoluminescence spectra were studied.

AB - 0.μm thick InxGa1-xN epitaxial layers were grown by metal organic chemical vapor deposition on undoped GaN. GaN layers were ∼2.7μm thick and were grown on c-plane sapphire using low-temperature GaN buffer layers. Convergent-beam electron diffraction (CBED) was used to observe the local strain and dislocation density. The indium concentration of the InxGa1-xN was measured by Rutherford backscattering spectrometry (RBS). Using scanning electron microscopy and transmission electron microscopy InxGa1-xN layers cathodoluminescence spectra were studied.

KW - Buffer layers

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