Microstructure of InxGa1-xN thick epitaxial layers

L. Geng; S. Srinivasan; R. Liu; B. Jiang; H. Omiya; Fernando Ponce; S. Tanaka; Y. Nakagawa

doi:10.1109/ISCS.2003.1239879

Microstructure of In_xGa_1-xN thick epitaxial layers

L. Geng, S. Srinivasan, R. Liu, B. Jiang, H. Omiya, Fernando Ponce, S. Tanaka, Y. Nakagawa

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

0.μm thick In_xGa_1-xN epitaxial layers were grown by metal organic chemical vapor deposition on undoped GaN. GaN layers were ∼2.7μm thick and were grown on c-plane sapphire using low-temperature GaN buffer layers. Convergent-beam electron diffraction (CBED) was used to observe the local strain and dislocation density. The indium concentration of the In_xGa_1-xN was measured by Rutherford backscattering spectrometry (RBS). Using scanning electron microscopy and transmission electron microscopy In_xGa_1-xN layers cathodoluminescence spectra were studied.

Original language	English (US)
Title of host publication	IEEE International Symposium on Compound Semiconductors, Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	8-9
Number of pages	2
Volume	2003-January
ISBN (Print)	0780378202
DOIs	https://doi.org/10.1109/ISCS.2003.1239879
State	Published - 2003
Event	2003 International Symposium on Compound Semiconductors, ISCS 2003 - San Diego, United States Duration: Aug 25 2003 → Aug 27 2003

Other

Other	2003 International Symposium on Compound Semiconductors, ISCS 2003
Country/Territory	United States
City	San Diego
Period	8/25/03 → 8/27/03

Keywords

Buffer layers
Capacitive sensors
Chemical vapor deposition
Diffraction
Epitaxial layers
Gallium nitride
Microstructure
Organic chemicals
Scanning electron microscopy
Transmission electron microscopy

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ISCS.2003.1239879

Cite this

Geng, L, Srinivasan, S, Liu, R, Jiang, B, Omiya, H, Ponce, F, Tanaka, S & Nakagawa, Y 2003, Microstructure of In_xGa_1-xN thick epitaxial layers. in IEEE International Symposium on Compound Semiconductors, Proceedings. vol. 2003-January, 1239879, Institute of Electrical and Electronics Engineers Inc., pp. 8-9, 2003 International Symposium on Compound Semiconductors, ISCS 2003, San Diego, United States, 8/25/03. https://doi.org/10.1109/ISCS.2003.1239879

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title = "Microstructure of InxGa1-xN thick epitaxial layers",

abstract = "0.μm thick InxGa1-xN epitaxial layers were grown by metal organic chemical vapor deposition on undoped GaN. GaN layers were ∼2.7μm thick and were grown on c-plane sapphire using low-temperature GaN buffer layers. Convergent-beam electron diffraction (CBED) was used to observe the local strain and dislocation density. The indium concentration of the InxGa1-xN was measured by Rutherford backscattering spectrometry (RBS). Using scanning electron microscopy and transmission electron microscopy InxGa1-xN layers cathodoluminescence spectra were studied.",

keywords = "Buffer layers, Capacitive sensors, Chemical vapor deposition, Diffraction, Epitaxial layers, Gallium nitride, Microstructure, Organic chemicals, Scanning electron microscopy, Transmission electron microscopy",

author = "L. Geng and S. Srinivasan and R. Liu and B. Jiang and H. Omiya and Fernando Ponce and S. Tanaka and Y. Nakagawa",

year = "2003",

doi = "10.1109/ISCS.2003.1239879",

language = "English (US)",

isbn = "0780378202",

volume = "2003-January",

pages = "8--9",

booktitle = "IEEE International Symposium on Compound Semiconductors, Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2003 International Symposium on Compound Semiconductors, ISCS 2003 ; Conference date: 25-08-2003 Through 27-08-2003",

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T1 - Microstructure of InxGa1-xN thick epitaxial layers

AU - Geng, L.

AU - Srinivasan, S.

AU - Liu, R.

AU - Jiang, B.

AU - Omiya, H.

AU - Ponce, Fernando

AU - Tanaka, S.

AU - Nakagawa, Y.

PY - 2003

Y1 - 2003

N2 - 0.μm thick InxGa1-xN epitaxial layers were grown by metal organic chemical vapor deposition on undoped GaN. GaN layers were ∼2.7μm thick and were grown on c-plane sapphire using low-temperature GaN buffer layers. Convergent-beam electron diffraction (CBED) was used to observe the local strain and dislocation density. The indium concentration of the InxGa1-xN was measured by Rutherford backscattering spectrometry (RBS). Using scanning electron microscopy and transmission electron microscopy InxGa1-xN layers cathodoluminescence spectra were studied.

AB - 0.μm thick InxGa1-xN epitaxial layers were grown by metal organic chemical vapor deposition on undoped GaN. GaN layers were ∼2.7μm thick and were grown on c-plane sapphire using low-temperature GaN buffer layers. Convergent-beam electron diffraction (CBED) was used to observe the local strain and dislocation density. The indium concentration of the InxGa1-xN was measured by Rutherford backscattering spectrometry (RBS). Using scanning electron microscopy and transmission electron microscopy InxGa1-xN layers cathodoluminescence spectra were studied.

KW - Buffer layers

KW - Capacitive sensors

KW - Chemical vapor deposition

KW - Diffraction

KW - Epitaxial layers

KW - Gallium nitride

KW - Microstructure

KW - Organic chemicals

KW - Scanning electron microscopy

KW - Transmission electron microscopy

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BT - IEEE International Symposium on Compound Semiconductors, Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

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