Microstructure of InxGa1-xN thick epitaxial layers

L. Geng, S. Srinivasan, R. Liu, B. Jiang, H. Omiya, Fernando Ponce, S. Tanaka, Y. Nakagawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

0.μm thick InxGa1-xN epitaxial layers were grown by metal organic chemical vapor deposition on undoped GaN. GaN layers were ∼2.7μm thick and were grown on c-plane sapphire using low-temperature GaN buffer layers. Convergent-beam electron diffraction (CBED) was used to observe the local strain and dislocation density. The indium concentration of the InxGa1-xN was measured by Rutherford backscattering spectrometry (RBS). Using scanning electron microscopy and transmission electron microscopy InxGa1-xN layers cathodoluminescence spectra were studied.

Original languageEnglish (US)
Title of host publicationIEEE International Symposium on Compound Semiconductors, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages8-9
Number of pages2
Volume2003-January
ISBN (Print)0780378202
DOIs
StatePublished - 2003
Event2003 International Symposium on Compound Semiconductors, ISCS 2003 - San Diego, United States
Duration: Aug 25 2003Aug 27 2003

Other

Other2003 International Symposium on Compound Semiconductors, ISCS 2003
CountryUnited States
CitySan Diego
Period8/25/038/27/03

Keywords

  • Buffer layers
  • Capacitive sensors
  • Chemical vapor deposition
  • Diffraction
  • Epitaxial layers
  • Gallium nitride
  • Microstructure
  • Organic chemicals
  • Scanning electron microscopy
  • Transmission electron microscopy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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