MICROSTRUCTURE OF IMPLANTED AND RAPID THERMAL ANNEALED SIPOS.

D. K. Yang, Terry Alford, W. Maszara, V. H. Ozguz, J. T. Wortman, G. A. Rozgonyi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The study of SIPOS (semi-insulating polycrystalline silicon) has gained attention due to its practical importance as a passivation layer in high voltage bipolar silicon devices. SIPOS can be also used as a high injection efficiency emitter, as well as a high resistance material for resistors. The structural aspects of SIPOS layers deposited on thermally-grown SiO//2 by CVD method at 614 degree C and 170 mTorr for 2 hours were analysed.

Original languageEnglish (US)
Title of host publicationElectrochemical Society Extended Abstracts
PublisherElectrochemical Soc
Pages374-375
Number of pages2
Volume85-1
StatePublished - 1985
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)

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