MICROSTRUCTURE OF IMPLANTED AND RAPID THERMAL ANNEALED SIPOS.

D. K. Yang; Terry Alford; W. Maszara; V. H. Ozguz; J. T. Wortman; G. A. Rozgonyi

MICROSTRUCTURE OF IMPLANTED AND RAPID THERMAL ANNEALED SIPOS.

D. K. Yang, Terry Alford, W. Maszara, V. H. Ozguz, J. T. Wortman, G. A. Rozgonyi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The study of SIPOS (semi-insulating polycrystalline silicon) has gained attention due to its practical importance as a passivation layer in high voltage bipolar silicon devices. SIPOS can be also used as a high injection efficiency emitter, as well as a high resistance material for resistors. The structural aspects of SIPOS layers deposited on thermally-grown SiO//2 by CVD method at 614 degree C and 170 mTorr for 2 hours were analysed.

Original language	English (US)
Title of host publication	Electrochemical Society Extended Abstracts
Publisher	Electrochemical Soc
Pages	374-375
Number of pages	2
Volume	85-1
State	Published - 1985
Externally published	Yes

ASJC Scopus subject areas

General Engineering

Cite this

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title = "MICROSTRUCTURE OF IMPLANTED AND RAPID THERMAL ANNEALED SIPOS.",

abstract = "The study of SIPOS (semi-insulating polycrystalline silicon) has gained attention due to its practical importance as a passivation layer in high voltage bipolar silicon devices. SIPOS can be also used as a high injection efficiency emitter, as well as a high resistance material for resistors. The structural aspects of SIPOS layers deposited on thermally-grown SiO//2 by CVD method at 614 degree C and 170 mTorr for 2 hours were analysed.",

author = "Yang, {D. K.} and Terry Alford and W. Maszara and Ozguz, {V. H.} and Wortman, {J. T.} and Rozgonyi, {G. A.}",

year = "1985",

language = "English (US)",

volume = "85-1",

pages = "374--375",

booktitle = "Electrochemical Society Extended Abstracts",

publisher = "Electrochemical Soc",

}

TY - GEN

T1 - MICROSTRUCTURE OF IMPLANTED AND RAPID THERMAL ANNEALED SIPOS.

AU - Yang, D. K.

AU - Alford, Terry

AU - Maszara, W.

AU - Ozguz, V. H.

AU - Wortman, J. T.

AU - Rozgonyi, G. A.

PY - 1985

Y1 - 1985

N2 - The study of SIPOS (semi-insulating polycrystalline silicon) has gained attention due to its practical importance as a passivation layer in high voltage bipolar silicon devices. SIPOS can be also used as a high injection efficiency emitter, as well as a high resistance material for resistors. The structural aspects of SIPOS layers deposited on thermally-grown SiO//2 by CVD method at 614 degree C and 170 mTorr for 2 hours were analysed.

AB - The study of SIPOS (semi-insulating polycrystalline silicon) has gained attention due to its practical importance as a passivation layer in high voltage bipolar silicon devices. SIPOS can be also used as a high injection efficiency emitter, as well as a high resistance material for resistors. The structural aspects of SIPOS layers deposited on thermally-grown SiO//2 by CVD method at 614 degree C and 170 mTorr for 2 hours were analysed.

UR - http://www.scopus.com/inward/record.url?scp=0021788656&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0021788656&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0021788656

VL - 85-1

SP - 374

EP - 375

BT - Electrochemical Society Extended Abstracts

PB - Electrochemical Soc

ER -

MICROSTRUCTURE OF IMPLANTED AND RAPID THERMAL ANNEALED SIPOS.

Abstract

ASJC Scopus subject areas

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