The study of SIPOS (semi-insulating polycrystalline silicon) has gained attention due to its practical importance as a passivation layer in high voltage bipolar silicon devices. SIPOS can be also used as a high injection efficiency emitter, as well as a high resistance material for resistors. The structural aspects of SIPOS layers deposited on thermally-grown SiO//2 by CVD method at 614 degree C and 170 mTorr for 2 hours were analysed.
|Original language||English (US)|
|Title of host publication||Electrochemical Society Extended Abstracts|
|Number of pages||2|
|State||Published - 1985|
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