Microstructure of heteroepitaxial CdTe grown on misoriented Si(001) substrates

David Smith; S. C Y Tsen; Y. P. Chen; J. P. Faurie; S. Sivananthan

doi:10.1063/1.114949

Microstructure of heteroepitaxial CdTe grown on misoriented Si(001) substrates

David Smith, S. C Y Tsen, Y. P. Chen, J. P. Faurie, S. Sivananthan

Electrical Engineering

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Abstract

Transmission electron microscopy has been used to characterize the microstructure of heteroepitaxial CdTe (111) layers grown by molecular beam epitaxy directly on nominal and misoriented Si(001) substrates. High-resolution electron micrographs showing atomic-scale details of the CdTe (111)/Si(001) interface have been recorded. Layer quality depended on the substrate tilt parameters, including the offcut orientation angle θ, and the azimuthal angle φ relative to [110]. Small φ values (4°and 10°) gave high densities of stacking fault twins throughout the epilayer whereas larger misorientation angles led to a rapid falloff away from the substrate. Under optimized growth conditions, the occurrence of twins effectively dropped to zero within a distance of less than 2.5 μm from the substrate surface.

Original language	English (US)
Pages (from-to)	1591
Number of pages	1
Journal	Applied Physics Letters
Volume	67
DOIs	https://doi.org/10.1063/1.114949
State	Published - 1995

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Microstructure of heteroepitaxial CdTe grown on misoriented Si(001) substrates",

abstract = "Transmission electron microscopy has been used to characterize the microstructure of heteroepitaxial CdTe (111) layers grown by molecular beam epitaxy directly on nominal and misoriented Si(001) substrates. High-resolution electron micrographs showing atomic-scale details of the CdTe (111)/Si(001) interface have been recorded. Layer quality depended on the substrate tilt parameters, including the offcut orientation angle θ, and the azimuthal angle φ relative to [110]. Small φ values (4°and 10°) gave high densities of stacking fault twins throughout the epilayer whereas larger misorientation angles led to a rapid falloff away from the substrate. Under optimized growth conditions, the occurrence of twins effectively dropped to zero within a distance of less than 2.5 μm from the substrate surface.",

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T1 - Microstructure of heteroepitaxial CdTe grown on misoriented Si(001) substrates

AU - Smith, David

AU - Tsen, S. C Y

AU - Chen, Y. P.

AU - Faurie, J. P.

AU - Sivananthan, S.

PY - 1995

Y1 - 1995

N2 - Transmission electron microscopy has been used to characterize the microstructure of heteroepitaxial CdTe (111) layers grown by molecular beam epitaxy directly on nominal and misoriented Si(001) substrates. High-resolution electron micrographs showing atomic-scale details of the CdTe (111)/Si(001) interface have been recorded. Layer quality depended on the substrate tilt parameters, including the offcut orientation angle θ, and the azimuthal angle φ relative to [110]. Small φ values (4°and 10°) gave high densities of stacking fault twins throughout the epilayer whereas larger misorientation angles led to a rapid falloff away from the substrate. Under optimized growth conditions, the occurrence of twins effectively dropped to zero within a distance of less than 2.5 μm from the substrate surface.

AB - Transmission electron microscopy has been used to characterize the microstructure of heteroepitaxial CdTe (111) layers grown by molecular beam epitaxy directly on nominal and misoriented Si(001) substrates. High-resolution electron micrographs showing atomic-scale details of the CdTe (111)/Si(001) interface have been recorded. Layer quality depended on the substrate tilt parameters, including the offcut orientation angle θ, and the azimuthal angle φ relative to [110]. Small φ values (4°and 10°) gave high densities of stacking fault twins throughout the epilayer whereas larger misorientation angles led to a rapid falloff away from the substrate. Under optimized growth conditions, the occurrence of twins effectively dropped to zero within a distance of less than 2.5 μm from the substrate surface.

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Microstructure of heteroepitaxial CdTe grown on misoriented Si(001) substrates

Abstract

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