Microstructure of heteroepitaxial CdTe grown on misoriented Si(001) substrates

David Smith, S. C Y Tsen, Y. P. Chen, J. P. Faurie, S. Sivananthan

Research output: Contribution to journalArticle

55 Scopus citations

Abstract

Transmission electron microscopy has been used to characterize the microstructure of heteroepitaxial CdTe (111) layers grown by molecular beam epitaxy directly on nominal and misoriented Si(001) substrates. High-resolution electron micrographs showing atomic-scale details of the CdTe (111)/Si(001) interface have been recorded. Layer quality depended on the substrate tilt parameters, including the offcut orientation angle θ, and the azimuthal angle φ relative to [110]. Small φ values (4°and 10°) gave high densities of stacking fault twins throughout the epilayer whereas larger misorientation angles led to a rapid falloff away from the substrate. Under optimized growth conditions, the occurrence of twins effectively dropped to zero within a distance of less than 2.5 μm from the substrate surface.

Original languageEnglish (US)
Number of pages1
JournalApplied Physics Letters
Volume67
DOIs
StatePublished - Dec 1 1995

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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