Microstructure and surface morphology of InAsSbBi grown by molecular beam epitaxy

R. R. Kosireddy, S. T. Schaefer, A. J. Shalindar, Shane Johnson

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The physical and chemical properties of 210 nm thick InAsSbBi layers grown by molecular beam epitaxy at temperatures between 400 and 430 °C on (100) GaSb substrates are investigated using Rutherford backscattering, X-ray diffraction, transmission electron microscopy, Nomarski optical microscopy, and atomic force microscopy. The results indicate that the layers are nearly lattice matched, coherently strained, and contain dilute Bi mole fractions. Large surface droplets with diameters on the order of 1 μm and densities on the order of 106 cm-2 are observed when the InAsSbBi growth is performed with lean As overpressures around 1%. Surface droplets are not observed when the As overpressure is increased to 4%. Small crystalline droplets with diameters on the order of 70 nm and densities on the order of 1010 cm-2 are observed between the large droplets for InAsSbBi grown at 430 °C. Analysis of one of the small droplets indicates a misoriented zinc blende crystal structure composed primarily of In, Sb, and Bi, with a lattice constant of 6.543 ± 0.038 Å. Lateral modulation in the Bi mole fraction is observed in InAsSbBi layers grown at 400 °C.

Original languageEnglish (US)
Article number095108
JournalJournal of Applied Physics
Volume126
Issue number9
DOIs
StatePublished - Sep 7 2019

Fingerprint

molecular beam epitaxy
overpressure
microstructure
chemical properties
backscattering
zinc
physical properties
atomic force microscopy
microscopy
modulation
transmission electron microscopy
crystal structure
diffraction
x rays
temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Microstructure and surface morphology of InAsSbBi grown by molecular beam epitaxy. / Kosireddy, R. R.; Schaefer, S. T.; Shalindar, A. J.; Johnson, Shane.

In: Journal of Applied Physics, Vol. 126, No. 9, 095108, 07.09.2019.

Research output: Contribution to journalArticle

Kosireddy, R. R. ; Schaefer, S. T. ; Shalindar, A. J. ; Johnson, Shane. / Microstructure and surface morphology of InAsSbBi grown by molecular beam epitaxy. In: Journal of Applied Physics. 2019 ; Vol. 126, No. 9.
@article{300cd2ca4ead44299428bcde229e79b6,
title = "Microstructure and surface morphology of InAsSbBi grown by molecular beam epitaxy",
abstract = "The physical and chemical properties of 210 nm thick InAsSbBi layers grown by molecular beam epitaxy at temperatures between 400 and 430 °C on (100) GaSb substrates are investigated using Rutherford backscattering, X-ray diffraction, transmission electron microscopy, Nomarski optical microscopy, and atomic force microscopy. The results indicate that the layers are nearly lattice matched, coherently strained, and contain dilute Bi mole fractions. Large surface droplets with diameters on the order of 1 μm and densities on the order of 106 cm-2 are observed when the InAsSbBi growth is performed with lean As overpressures around 1{\%}. Surface droplets are not observed when the As overpressure is increased to 4{\%}. Small crystalline droplets with diameters on the order of 70 nm and densities on the order of 1010 cm-2 are observed between the large droplets for InAsSbBi grown at 430 °C. Analysis of one of the small droplets indicates a misoriented zinc blende crystal structure composed primarily of In, Sb, and Bi, with a lattice constant of 6.543 ± 0.038 {\AA}. Lateral modulation in the Bi mole fraction is observed in InAsSbBi layers grown at 400 °C.",
author = "Kosireddy, {R. R.} and Schaefer, {S. T.} and Shalindar, {A. J.} and Shane Johnson",
year = "2019",
month = "9",
day = "7",
doi = "10.1063/1.5096795",
language = "English (US)",
volume = "126",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "9",

}

TY - JOUR

T1 - Microstructure and surface morphology of InAsSbBi grown by molecular beam epitaxy

AU - Kosireddy, R. R.

AU - Schaefer, S. T.

AU - Shalindar, A. J.

AU - Johnson, Shane

PY - 2019/9/7

Y1 - 2019/9/7

N2 - The physical and chemical properties of 210 nm thick InAsSbBi layers grown by molecular beam epitaxy at temperatures between 400 and 430 °C on (100) GaSb substrates are investigated using Rutherford backscattering, X-ray diffraction, transmission electron microscopy, Nomarski optical microscopy, and atomic force microscopy. The results indicate that the layers are nearly lattice matched, coherently strained, and contain dilute Bi mole fractions. Large surface droplets with diameters on the order of 1 μm and densities on the order of 106 cm-2 are observed when the InAsSbBi growth is performed with lean As overpressures around 1%. Surface droplets are not observed when the As overpressure is increased to 4%. Small crystalline droplets with diameters on the order of 70 nm and densities on the order of 1010 cm-2 are observed between the large droplets for InAsSbBi grown at 430 °C. Analysis of one of the small droplets indicates a misoriented zinc blende crystal structure composed primarily of In, Sb, and Bi, with a lattice constant of 6.543 ± 0.038 Å. Lateral modulation in the Bi mole fraction is observed in InAsSbBi layers grown at 400 °C.

AB - The physical and chemical properties of 210 nm thick InAsSbBi layers grown by molecular beam epitaxy at temperatures between 400 and 430 °C on (100) GaSb substrates are investigated using Rutherford backscattering, X-ray diffraction, transmission electron microscopy, Nomarski optical microscopy, and atomic force microscopy. The results indicate that the layers are nearly lattice matched, coherently strained, and contain dilute Bi mole fractions. Large surface droplets with diameters on the order of 1 μm and densities on the order of 106 cm-2 are observed when the InAsSbBi growth is performed with lean As overpressures around 1%. Surface droplets are not observed when the As overpressure is increased to 4%. Small crystalline droplets with diameters on the order of 70 nm and densities on the order of 1010 cm-2 are observed between the large droplets for InAsSbBi grown at 430 °C. Analysis of one of the small droplets indicates a misoriented zinc blende crystal structure composed primarily of In, Sb, and Bi, with a lattice constant of 6.543 ± 0.038 Å. Lateral modulation in the Bi mole fraction is observed in InAsSbBi layers grown at 400 °C.

UR - http://www.scopus.com/inward/record.url?scp=85071237606&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85071237606&partnerID=8YFLogxK

U2 - 10.1063/1.5096795

DO - 10.1063/1.5096795

M3 - Article

AN - SCOPUS:85071237606

VL - 126

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 9

M1 - 095108

ER -