Abstract
Ti37Al63 and Ti53Al47 thin films are deposited onto SiO2 by sputtering and then annealed to investigate their properties for applications in high-temperature electronics. The films show good thermal stability and reasonable electrical resistivity. Different microstructures and phases are obtained as different film compositions and anneal conditions are used.
Original language | English (US) |
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Pages (from-to) | 517-521 |
Number of pages | 5 |
Journal | Scripta Materialia |
Volume | 50 |
Issue number | 4 |
DOIs | |
State | Published - Feb 2004 |
Keywords
- Characterization
- Microstructure
- Sputtering
- Titanium aluminide thin films
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys