9 Citations (Scopus)

Abstract

The use of boron as a sintering aid reduces the sintering temperature, enhances the sintering density, and improves the microwave properties of Ba(Cd1/3Ta2/3)O3 ceramic dielectrics. Observations by transmission electron microscopy indicate that the liquid sintering mechanism contributes to the improvement in sintering density for boron concentrations exceeding 0.5 wt%. The introduction of as small as 0.01% boron also results in the production of high-density samples (∼95%), presumably indicating that a point defect mechanism may also play an important role in the sintering process. X-ray diffraction data combined with high-resolution transmission electron microscopy images show that boron-doped Ba(Cd1/3Ta2/3)O3 ceramic material has a well-ordered hexagonal structure. Annealing treatment is found to improve the microwave properties. The best sample has a dielectric constant of 32, a temperature coefficient of resonant frequency of 80 ± 15 ppm/° C, and a quality factor of >25,000 at 2 GHz.

Original languageEnglish (US)
Pages (from-to)3526-3533
Number of pages8
JournalJournal of Materials Research
Volume19
Issue number12
DOIs
StatePublished - Dec 2004

Fingerprint

boron oxides
Dielectric properties
Boron
dielectric properties
sintering
Sintering
Microwaves
ceramics
microwaves
microstructure
Microstructure
Oxides
boron
transmission electron microscopy
Point defects
Ceramic materials
High resolution transmission electron microscopy
point defects
boron oxide
resonant frequencies

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Microstructure and dielectric properties of Ba(Cd1/3Ta2/3)O3 microwave ceramics synthesized with a boron oxide sintering aid. / Liu, Shaojun; Sun, Jian; Taylor, Richard; Smith, David; Newman, Nathan.

In: Journal of Materials Research, Vol. 19, No. 12, 12.2004, p. 3526-3533.

Research output: Contribution to journalArticle

@article{f57fb646f9724a58a4b7033bcc89265a,
title = "Microstructure and dielectric properties of Ba(Cd1/3Ta2/3)O3 microwave ceramics synthesized with a boron oxide sintering aid",
abstract = "The use of boron as a sintering aid reduces the sintering temperature, enhances the sintering density, and improves the microwave properties of Ba(Cd1/3Ta2/3)O3 ceramic dielectrics. Observations by transmission electron microscopy indicate that the liquid sintering mechanism contributes to the improvement in sintering density for boron concentrations exceeding 0.5 wt{\%}. The introduction of as small as 0.01{\%} boron also results in the production of high-density samples (∼95{\%}), presumably indicating that a point defect mechanism may also play an important role in the sintering process. X-ray diffraction data combined with high-resolution transmission electron microscopy images show that boron-doped Ba(Cd1/3Ta2/3)O3 ceramic material has a well-ordered hexagonal structure. Annealing treatment is found to improve the microwave properties. The best sample has a dielectric constant of 32, a temperature coefficient of resonant frequency of 80 ± 15 ppm/° C, and a quality factor of >25,000 at 2 GHz.",
author = "Shaojun Liu and Jian Sun and Richard Taylor and David Smith and Nathan Newman",
year = "2004",
month = "12",
doi = "10.1557/JMR.2004.0456",
language = "English (US)",
volume = "19",
pages = "3526--3533",
journal = "Journal of Materials Research",
issn = "0884-2914",
publisher = "Materials Research Society",
number = "12",

}

TY - JOUR

T1 - Microstructure and dielectric properties of Ba(Cd1/3Ta2/3)O3 microwave ceramics synthesized with a boron oxide sintering aid

AU - Liu, Shaojun

AU - Sun, Jian

AU - Taylor, Richard

AU - Smith, David

AU - Newman, Nathan

PY - 2004/12

Y1 - 2004/12

N2 - The use of boron as a sintering aid reduces the sintering temperature, enhances the sintering density, and improves the microwave properties of Ba(Cd1/3Ta2/3)O3 ceramic dielectrics. Observations by transmission electron microscopy indicate that the liquid sintering mechanism contributes to the improvement in sintering density for boron concentrations exceeding 0.5 wt%. The introduction of as small as 0.01% boron also results in the production of high-density samples (∼95%), presumably indicating that a point defect mechanism may also play an important role in the sintering process. X-ray diffraction data combined with high-resolution transmission electron microscopy images show that boron-doped Ba(Cd1/3Ta2/3)O3 ceramic material has a well-ordered hexagonal structure. Annealing treatment is found to improve the microwave properties. The best sample has a dielectric constant of 32, a temperature coefficient of resonant frequency of 80 ± 15 ppm/° C, and a quality factor of >25,000 at 2 GHz.

AB - The use of boron as a sintering aid reduces the sintering temperature, enhances the sintering density, and improves the microwave properties of Ba(Cd1/3Ta2/3)O3 ceramic dielectrics. Observations by transmission electron microscopy indicate that the liquid sintering mechanism contributes to the improvement in sintering density for boron concentrations exceeding 0.5 wt%. The introduction of as small as 0.01% boron also results in the production of high-density samples (∼95%), presumably indicating that a point defect mechanism may also play an important role in the sintering process. X-ray diffraction data combined with high-resolution transmission electron microscopy images show that boron-doped Ba(Cd1/3Ta2/3)O3 ceramic material has a well-ordered hexagonal structure. Annealing treatment is found to improve the microwave properties. The best sample has a dielectric constant of 32, a temperature coefficient of resonant frequency of 80 ± 15 ppm/° C, and a quality factor of >25,000 at 2 GHz.

UR - http://www.scopus.com/inward/record.url?scp=12844252027&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=12844252027&partnerID=8YFLogxK

U2 - 10.1557/JMR.2004.0456

DO - 10.1557/JMR.2004.0456

M3 - Article

VL - 19

SP - 3526

EP - 3533

JO - Journal of Materials Research

JF - Journal of Materials Research

SN - 0884-2914

IS - 12

ER -