Abstract
The use of boron as a sintering aid reduces the sintering temperature, enhances the sintering density, and improves the microwave properties of Ba(Cd1/3Ta2/3)O3 ceramic dielectrics. Observations by transmission electron microscopy indicate that the liquid sintering mechanism contributes to the improvement in sintering density for boron concentrations exceeding 0.5 wt%. The introduction of as small as 0.01% boron also results in the production of high-density samples (∼95%), presumably indicating that a point defect mechanism may also play an important role in the sintering process. X-ray diffraction data combined with high-resolution transmission electron microscopy images show that boron-doped Ba(Cd1/3Ta2/3)O3 ceramic material has a well-ordered hexagonal structure. Annealing treatment is found to improve the microwave properties. The best sample has a dielectric constant of 32, a temperature coefficient of resonant frequency of 80 ± 15 ppm/° C, and a quality factor of >25,000 at 2 GHz.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 3526-3533 |
| Number of pages | 8 |
| Journal | Journal of Materials Research |
| Volume | 19 |
| Issue number | 12 |
| DOIs | |
| State | Published - Dec 2004 |
Fingerprint
ASJC Scopus subject areas
- Materials Science(all)
Cite this
Microstructure and dielectric properties of Ba(Cd1/3Ta2/3)O3 microwave ceramics synthesized with a boron oxide sintering aid. / Liu, Shaojun; Sun, Jian; Taylor, Richard; Smith, David; Newman, Nathan.
In: Journal of Materials Research, Vol. 19, No. 12, 12.2004, p. 3526-3533.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Microstructure and dielectric properties of Ba(Cd1/3Ta2/3)O3 microwave ceramics synthesized with a boron oxide sintering aid
AU - Liu, Shaojun
AU - Sun, Jian
AU - Taylor, Richard
AU - Smith, David
AU - Newman, Nathan
PY - 2004/12
Y1 - 2004/12
N2 - The use of boron as a sintering aid reduces the sintering temperature, enhances the sintering density, and improves the microwave properties of Ba(Cd1/3Ta2/3)O3 ceramic dielectrics. Observations by transmission electron microscopy indicate that the liquid sintering mechanism contributes to the improvement in sintering density for boron concentrations exceeding 0.5 wt%. The introduction of as small as 0.01% boron also results in the production of high-density samples (∼95%), presumably indicating that a point defect mechanism may also play an important role in the sintering process. X-ray diffraction data combined with high-resolution transmission electron microscopy images show that boron-doped Ba(Cd1/3Ta2/3)O3 ceramic material has a well-ordered hexagonal structure. Annealing treatment is found to improve the microwave properties. The best sample has a dielectric constant of 32, a temperature coefficient of resonant frequency of 80 ± 15 ppm/° C, and a quality factor of >25,000 at 2 GHz.
AB - The use of boron as a sintering aid reduces the sintering temperature, enhances the sintering density, and improves the microwave properties of Ba(Cd1/3Ta2/3)O3 ceramic dielectrics. Observations by transmission electron microscopy indicate that the liquid sintering mechanism contributes to the improvement in sintering density for boron concentrations exceeding 0.5 wt%. The introduction of as small as 0.01% boron also results in the production of high-density samples (∼95%), presumably indicating that a point defect mechanism may also play an important role in the sintering process. X-ray diffraction data combined with high-resolution transmission electron microscopy images show that boron-doped Ba(Cd1/3Ta2/3)O3 ceramic material has a well-ordered hexagonal structure. Annealing treatment is found to improve the microwave properties. The best sample has a dielectric constant of 32, a temperature coefficient of resonant frequency of 80 ± 15 ppm/° C, and a quality factor of >25,000 at 2 GHz.
UR - http://www.scopus.com/inward/record.url?scp=12844252027&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=12844252027&partnerID=8YFLogxK
U2 - 10.1557/JMR.2004.0456
DO - 10.1557/JMR.2004.0456
M3 - Article
VL - 19
SP - 3526
EP - 3533
JO - Journal of Materials Research
JF - Journal of Materials Research
SN - 0884-2914
IS - 12
ER -