TY - JOUR
T1 - Microstructure and dielectric properties of Ba(Cd1/3Ta2/3)O3 microwave ceramics synthesized with a boron oxide sintering aid
AU - Liu, Shaojun
AU - Sun, Jian
AU - Taylor, Richard
AU - Smith, David
AU - Newman, Nathan
N1 - Funding Information:
The Office of Naval Research under Contract No. N000140010550 and the Arizona State University Wintech center supported this work. We thank Dr. Molly McCartney for assistance with microanalysis, and we acknowledge use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy of Arizona State University.
PY - 2004/12
Y1 - 2004/12
N2 - The use of boron as a sintering aid reduces the sintering temperature, enhances the sintering density, and improves the microwave properties of Ba(Cd1/3Ta2/3)O3 ceramic dielectrics. Observations by transmission electron microscopy indicate that the liquid sintering mechanism contributes to the improvement in sintering density for boron concentrations exceeding 0.5 wt%. The introduction of as small as 0.01% boron also results in the production of high-density samples (∼95%), presumably indicating that a point defect mechanism may also play an important role in the sintering process. X-ray diffraction data combined with high-resolution transmission electron microscopy images show that boron-doped Ba(Cd1/3Ta2/3)O3 ceramic material has a well-ordered hexagonal structure. Annealing treatment is found to improve the microwave properties. The best sample has a dielectric constant of 32, a temperature coefficient of resonant frequency of 80 ± 15 ppm/° C, and a quality factor of >25,000 at 2 GHz.
AB - The use of boron as a sintering aid reduces the sintering temperature, enhances the sintering density, and improves the microwave properties of Ba(Cd1/3Ta2/3)O3 ceramic dielectrics. Observations by transmission electron microscopy indicate that the liquid sintering mechanism contributes to the improvement in sintering density for boron concentrations exceeding 0.5 wt%. The introduction of as small as 0.01% boron also results in the production of high-density samples (∼95%), presumably indicating that a point defect mechanism may also play an important role in the sintering process. X-ray diffraction data combined with high-resolution transmission electron microscopy images show that boron-doped Ba(Cd1/3Ta2/3)O3 ceramic material has a well-ordered hexagonal structure. Annealing treatment is found to improve the microwave properties. The best sample has a dielectric constant of 32, a temperature coefficient of resonant frequency of 80 ± 15 ppm/° C, and a quality factor of >25,000 at 2 GHz.
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U2 - 10.1557/JMR.2004.0456
DO - 10.1557/JMR.2004.0456
M3 - Article
AN - SCOPUS:12844252027
VL - 19
SP - 3526
EP - 3533
JO - Journal of Materials Research
JF - Journal of Materials Research
SN - 0884-2914
IS - 12
ER -